• Title/Summary/Keyword: Channel Structure

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Lagrangian Investigation of Turbulent Channel Flow (II) - Analysis of Lagrangian Statistics - (난류채널유동의 라그란지안 해석 (II) - 라그란지안 통계분석 -)

  • Choi, Ho-Jong;Lee, Sang-Hwan
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.27 no.7
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    • pp.867-876
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    • 2003
  • The Lagrangian dispersion of fluid particles in inhomogeneous turbulence is investigated by a direct numerical simulation of turbulent channel flow. Four points Hermite interpolation in the homogeneous direction and Chebyshev polynomials in the inhomogeneous direction is adopted to simulate the fluid particle dispersion. An inhomogeneity of Lagrangian statistics in turbulent boundary layer is investigated by releasing many particles at several different wall-normal locations and tracking those particles. The fluid particle dispersions and Lagrangian structure functions of velocity are scaled by the Kolmogorov similarity. The auto-correlations of velocity and acceleration are shown at the different releasing locations. Effect of initial particle location on the dispersion is analyzed by the probability density function at the several downstreams and time instants.

Fabrication and Characterization of Self-Aligned Recessed Channel SOI NMOSFEGs

  • Lee, Jong-Ho
    • Journal of Electrical Engineering and information Science
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    • v.2 no.4
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    • pp.106-110
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    • 1997
  • A new SOI NMOSFET with a 'LOCOS-like' shape self-aligned polysilicon gate formed on the recessed channel region has been fabricated by a mix-and-match technology. For the first time, a new scheme for implementing self-alignment in both source/drain and gate structure in recessed channel device fabrication was tried. Symmetric source/drain doping profile was obtained and highly symmetric electrical characteristics were observed. Drain current measured from 0.3${\mu}{\textrm}{m}$ SOI devices with V\ulcorner of 0.77V and Tox=7.6nm is 360$mutextrm{A}$/${\mu}{\textrm}{m}$ at V\ulcorner\ulcorner=3.5V and V\ulcorner=2.5V. Improved breakdown characteristics were obtained and the BV\ulcorner\ulcorner\ulcorner(the drain voltage for 1 nA/${\mu}{\textrm}{m}$ of I\ulcorner at V=\ulcorner\ulcorner=0V) of the device with L\ulcorner\ulcorner=0.3${\mu}{\textrm}{m}$ under the floating body condition was as high as 3.7 V. Problems for the new scheme are also addressed and more advanced device structure based on the proposed scheme is proposed to solve the problems.

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Large-Eddy Simulation of Turbulent Channel Flow Using a Viscous Numerical Wave Tank Simulation Technique (점성 수치파랑수조 기술을 이용한 평판간 난류유동의 LES 해석)

  • 박종천;강대환;윤현식;전호환
    • Journal of Ocean Engineering and Technology
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    • v.18 no.2
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    • pp.1-9
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    • 2004
  • As the first step to investigate the nonlinear interactions between turbulence and marine structures inside a viscous NWT, a LES technique was applied to solve the turbulent channel flow for =150. The employed turbulence models included 4 types: the Smagorinsky model, the Dynamic SGS model, the Structure Function model, and the Generalized Normal Stress model. The simulated data in time-series for the LESs were averaged in both time and space, and statistical analyses were performed. The results of the LESs were compared with those of a DNS, developed in the present study and two spectral methods by Yoon et al.(2003) and Kim et a1.(1987). Based on this research, the accuracy of LESs has been found to be still related to the number of grids for fine grid size).

Channel Characteristics of Indoor Wireless Infrared Communication System Due to Different Transceiver Conditions

  • Peng, Chuan;Wang, Zan;Kim, Ji-Do;Pan, Jae-Kyung
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.2A
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    • pp.198-203
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    • 2008
  • In this paper, we consider the diffuse type of indoor wireless optical communication (WOC) system. To find the channel characteristics of indoor wireless infrared communication system, we investigate the simulation process to get the impulse response of diffuse type and analyze the scenario of the indoor structure which we have built. The simulation results of the impulse response include power ratio and time delay due to bounce times. We get and discuss the receiving power distribution according to six configurations which have different transmitter and receiver positions and reflection coefficients of the indoor structure assumed. The results of this paper are useful to design the indoor wireless optical communication systems.

The Band-Broadening Design of the Rotary Joint Transition for the X-Band Microwave Channel (X밴드 고주파 채널용 로터리 조인트 천이구조의 대역확장 설계)

  • Kim, Siok;Lee, Changhyeong;Han, Dajung;Roh, Donsuk;Kahng, Sungtek
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.3
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    • pp.557-562
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    • 2017
  • In this paper, we show the design of a rotary joint transition for the X-band channel in a rotatable microwave communication system. The transition seems complicated to make a channel between two coaxial cables through a cylindrical waveguide. To make a broad-band performance in the X-band with low insertion loss and return loss given the constraint on the length and radius of this complicated-looking cylindrical structure, Genetic Algorithm optimization is adopted to check the validity of an intensive parametric study in the design. The structure is fabricated and tested to show how valid the design method is as well as good frequency responses.

Enhanced Electrical Performance of SiZnSnO Thin Film Transistor with Thin Metal Layer

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.3
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    • pp.141-143
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    • 2017
  • Novel structured thin film transistors (TFTs) of amorphous silicon zinc tin oxide (a-SZTO) were designed and fabricated with a thin metal layer between the source and drain electrodes. A SZTO channel was annealed at $500^{\circ}C$. A Ti/Au electrode was used on the SZTO channel. Metals are deposited between the source and drain in this novel structured TFTs. The mobility of the was improved from $14.77cm^2/Vs$ to $35.59cm^2/Vs$ simply by adopting the novel structure without changing any other processing parameters, such as annealing condition, sputtering power or processing pressure. In addition, stability was improved under the positive bias thermal stress and negative bias thermal stress applied to the novel structured TFTs. Finally, this novel structured TFT was observed to be less affected by back-channel effect.

Vibration Filter Using Vector Channel Periodic Lattice

  • Hwang, Won-Gul;Im, Hyung-Eun
    • Journal of Mechanical Science and Technology
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    • v.20 no.12
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    • pp.2043-2051
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    • 2006
  • This paper considered identification of vibration characteristics of flexible structure with vector channel periodic lattice filter. We present an algorithm for AR coefficients for the vector-channel lattice filters, and characteristic equation and transfer function are derived from these coefficients. Vibration lattice filter is then constructed from the vector channel lattice filter, and performance of this vibration filter is tested with a test signal which is a combination of many sine waves to compare the performance of scalar and vector channel lattice. Also it is applied to the cantilever data to identify properties of the system, such as natural frequencies and damping ratios, to show its performance.

Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.3
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    • pp.310-314
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    • 2011
  • This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

New Cu Process and Short Channel TFT

  • Yang, J.Y.;Hong, G.S.;Kim, K.;Bang, J.H.;Ryu, W.S.;Kim, J.O.;Kang, Y.K.;Yang, M.S.;Kang, I.B.;Chung, I.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1189-1192
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    • 2009
  • Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

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Performance Analysis of Blind Channel Estimation for Precoded Multiuser Systems

  • Xu, Zhengyuan
    • Journal of Communications and Networks
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    • v.4 no.3
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    • pp.189-198
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    • 2002
  • Precoder has been shown to be able to provide source diversity and design flexibility. In this paper we employ precoding techniques for block transmission based on a multirate filterbank structure. To accommodate multiuser communication with variable data rates, different precoders with corresponding coefficients and up/down sampling rates are used. However, due to unknown multipath distortion, different interferences may exist in the received data, such as multiuser interference, intersymbol interference and interblock interference. To estimate channel parameters for a desired user, we employ all structured signature waveforms associated with different symbols of that user and apply subspace techniques. Therefore better performance of channel estimator can be achieved than the conventional subspace method based only on the signature of the current symbol. The delay for that user can also be jointly estimated. Channel identifiability conditions and asymptotic channel estimation error are investigated in detail. Numerical examples are provided to justify the proposed method. gest either multicode (MC) or multiple processing gain (MPG) mechanism [2], while requiring data rates to be integral multiples of some basic low-rate. In order to support variable rate transmission however, a comprehensive scheme needs to be investigated.