• Title/Summary/Keyword: Ceramic stack

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결정질 실리콘 태양전지의 패시베이션 적용을 위한 Al2O3/SiON 적층구조의 열적 안정성에 대한 연구 (A Study on the Thermal Stability of an Al2O3/SiON Stack Structure for c-Si Solar Cell Passivation Application)

  • 조국현;장효식
    • 한국세라믹학회지
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    • 제51권3호
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    • pp.197-200
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    • 2014
  • We investigated the influence of blistering on $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks passivation layers. $Al_2O_3$ film provides outstanding Si surface passivation quality. $Al_2O_3$ film as the rear passivation layer of a p-type Si solar cell is usually stacked with a capping layer, such as $SiO_2$, SiNx, and SiON films. These capping layers protect the thin $Al_2O_3$ layer from an Al electrode during the annealing process. We compared $Al_2O_3$/SiON stacks and $Al_2O_3$/SiNx:H stacks through surface morphology and minority carrier lifetime after annealing processes at $450^{\circ}C$ and $850^{\circ}C$. As a result, the $Al_2O_3$/SiON stacks were observed to produce less blister phenomenon than $Al_2O_3$/SiNx:H stacks. This can be explained by the differences in the H species content. In the process of depositing SiNx film, the rich H species in $NH_3$ source are diffused to the $Al_2O_3$ film. On the other hand, less hydrogen diffusion occurs in SiON film as it contains less H species than SiNx film. This blister phenomenon leads to an increase insurface defect density. Consequently, the $Al_2O_3$/SiON stacks had a higher minority carrier lifetime than the $Al_2O_3$/SiNx:H stacks.

The fabrication of bulk magnet stacked with HTS tapes for the magnetic levitation

  • Park, Insung;Kim, Gwantae;Kim, Kyeongdeok;Sim, Kideok;Ha, Hongsoo
    • 한국초전도ㆍ저온공학회논문지
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    • 제24권3호
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    • pp.47-51
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    • 2022
  • With the innovative development of bio, pharmaceutical, and semiconductor technologies, it is essential to demand a next-generation transfer system that minimizes dust and vibrations generated during the manufacturing process. In order to develop dust-free and non-contact transfer systems, the high temperature superconductor (HTS) bulks have been applied as a magnet for levitation. However, sintered HTS bulk magnets are limited in their applications due to their relatively low critical current density (Jc) of several kA/cm2 and low mechanical properties as a ceramic material. In addition, during cooling to cryogenic temperatures repeatedly, cracks and damage may occur by thermal shock. On the other hand, the bulk magnets made by stacked HTS tapes have various advantages, such as relatively high mechanical properties by alternate stacking of the metal and ceramic layer, high magnetic levitation performance by using coated conductors with high Jc of several MA/cm2, consistent superconducting properties, miniaturization, light-weight, etc. In this study, we tried to fabricate HTS tapes stacked bulk magnets with 60 mm × 60 mm area and various numbers of HTS tape stacked layers for magnetic levitation. In order to examine the levitation forces of bulk magnets stacked with HTS tapes from 1 to 16 layers, specialized force measurement apparatus was made and adapted to measure the levitation force. By increasing the number of HTS tapes stacked layers, the levitation force of bulk magnet become larger. 16 HTS tapes stacked bulk magnets show promising levitation force of about 23.5 N, 6.538 kPa at 10 mm of levitated distance from NdFeB permanent magnet.

SOFC용 $LaSrTiO_3$계 연결재에서 소결조제 첨가에 따른 소결특성 (Effect of Sintering aid in $LaSrTiO_3$ Ceramic Interconnector for SOFC application)

  • 안용태;최병현;지미정;박성태;이경진;황해진
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 추계학술대회 초록집
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    • pp.89.1-89.1
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    • 2010
  • 본 연구는 세라믹 연결재로 사용되는 Perovskite 구조의 LSTO조성의 실제 SOFC stack 적용을 위한 소결온도를 낮출 수 있는 방법에 관해 연구하였다. SOFC 단전지에서 IC 소재는 $1300{\sim}1400^{\circ}C$에서 소결이 이루어져야만 하나 현재 사용하고 있는 LCO계 조성의 경우 $1500{\sim}1600^{\circ}C$의 높은 온도에서 소결이 이루어지며 고온에서 $Cr_2O_3$의 휘발로 인해 낮은 전기전도성을 갖는 문제점을 가지고 있다. 이러한 문제점을 해결하기 위해 IC 소재에 소결조제를 첨가하여 소결특성을 평가하였고, SEM과 XRD분석을 통하여 perovskite 단일상이 합성된 것을 확인하였다. 또한 Archimedes법을 사용하여 흡수율 및 겉기공율을 측정하였고, DC analyzer를 사용하여 전기전도도를 측정한 결과 대기분위기 $750^{\circ}C$에서 높은 값을 나타냄을 확인할 수 있었다.

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광대역 수중 스피커 시스템의 설계 및 성능 특성 (Design and Performance Characteristics of a Broadband Underwater Speaker System)

  • 이대재
    • 한국수산과학회지
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    • 제44권5호
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    • pp.543-549
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    • 2011
  • An underwater speaker was developed for use as an acoustic deterrent device that transmits acoustic energy through the water omnidirectionally over a broadband frequency range to eliminate marine mammal attacks and to prevent physical damage to the inshore and coastal fishing grounds of Korea. The underwater speaker was constructed of two vibration caps machined from 6061-T6 aluminum alloy and a stack of PZ 26 piezoelectric ceramic rings (Ferroperm Piezoceramics A/S) connected mechanically in series and electrically in parallel. The performance characteristics of the underwater speaker were measured and analyzed in an experimental water tank of $5\;m{\times}5\;m{\times}6\;m$. The peak transmitting voltage response (TVR) was measured at 11.16 kHz with 163.45 dB re $1\;{\mu}Pa$/V at 1m. The underwater speaker showed a near omnidirectional beam pattern at the peak TVR resonance frequency. The usable frequency range was 4-25 kHz with a lower TVR limit of approximately 140 dB. We conclude that this underwater speaker could be satisfactorily used as an acoustic deterrent device against marine mammals, particularly the bottlenose dolphin, to protect catches and fishing grounds as well as the mammals themselves, for example, by keeping them away from fishing gear and/or vessels.

위성사진으로 본 북한의 시멘트 산업 (North Korea Cement Industry in Satellite Imagery)

  • 백철승;서준형;조진상;안지환;조계홍
    • 세라미스트
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    • 제22권2호
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    • pp.198-214
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    • 2019
  • The possibility of economic exchange with North Korea is increasing, but there is still a shortage of information of cement industry, which occupies the largest proportion of North Korean construction material industry. Therefore, this study researched the status of cement production facility management using satellite photographs of 16 cement factories in North Korea, and examined the operating status of North Korean cement industry by observing smoke discharged from the chimneys of the cement production facilities. When the satellite photographs were analyzed, it was observed that the monthly stack fog ratio of the North Korean cement factories was 55% in 2016, 60% in 2017 and nearly 65% in 2018. This demonstrates that the average operating ratio has been increasing continuously. However, the operation rate of the five major cement factories reaches the limit, actual cement production is estimated to have maintained the previous level or small increased.

평판형 SOFC 단전지 전극계면에서 발생되는 응력장에 관한 기초적 연구 (A Basic Study on the Stress Field in the Electrode Interface of the Planar SOFC Single Cell)

  • 박철준;권오헌;강지웅
    • 한국안전학회지
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    • 제28권5호
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    • pp.5-9
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    • 2013
  • Recently, eco-friendly sources of energy by fuel cells that use hydrogen as an energy source has emerged as the next generation of energy to solve the problem of environmental issues and exhaustion of energy. A solid oxide fuel cell(SOFC) classified based on the type of ion transfer mediator electrolyte has actively being researched. However, the reliability according to the thermal cycle is low during the operation of the fuel cell, and deformation problem comes from the difference in thermal expansion coefficient between the electrode material, the components made of ceramic material is also brittle, which means disadvantages in terms of the strength. Therefore, in this study, considering the states of the manufacturing and operating of SOFC single cells, the stress analyses in the each of the interfacial layer between the anode, electrolyte and the cathode were performed to get the basic data for reliability assessment of SOFC. The obtained results show that von Mises stress according to the thickness direction on operating state occurred maximum stress value in the electrolyte layer. And also the stresses inside the active area on a distance of 1 ${\mu}m$ from the electrode interface were estimated. Futhermore the evaluation was done for the variation of the stress according to the stage of the operation divided into three stages of manufacturing, stack, and operating.

Bonding Strength of Conductive Inner-Electrode Layers in Piezoelectric Multilayer Ceramics

  • Wang, Yiping;Yang, Ying;Zheng, Bingjin;Chen, Jing;Yao, Jinyi;Sheng, Yun
    • Transactions on Electrical and Electronic Materials
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    • 제18권4호
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    • pp.181-184
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    • 2017
  • Multilayer ceramics in which piezoelectric layers of $0.90Pb(Zr_{0.48}Ti_{0.52})O_3-0.05Pb(Mn_{1/3}Sb_{2/3})O_3-0.05Pb(Zn_{1/3}Nb_{2/3})O_3$ (0.90PZT-0.05PMS-0.05PZN) stack alternately with silver electrode layers were prepared by an advanced low-temperature co-fired ceramic (LTCC) method. The electrical properties and bonding strength of the multilayers were associated with the interface morphologies between the piezoelectric and silver-electrode layers. Usually, the inner silver electrodes are fabricated by sintering silver paste in multi-layer stacks. To improve the interface bonding strength, piezoelectric powders of 0.90PZT-0.05PMS-0.05PZN with an average particle size of $23{\mu}m$ were added to silver paste to form a gradient interface. SEM observation indicated clear interfaces in multilayer ceramics without powder addition. With the increase of piezoelectric powder addition in the silver paste, gradient interfaces were successfully obtained. The multilayer ceramics with gradient interfaces present greater bonding strength as well as excellent piezoelectric properties for 30~40 wt% of added powder. On the other hand, over addition greatly increased the resistance of the inner silver electrodes, leading to a piezoelectric behavior like that of bulk ceramics in multilayers.

Electrical and Chemical Properties of ultra thin RT-MOCVD Deposited Ti-doped $Ta_2O_5$

  • Lee, S. J.;H. F. Luan;A. Mao;T. S. Jeon;Lee, C. h.;Y. Senzaki;D. Roberts;D. L. Kwong
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권4호
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    • pp.202-208
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    • 2001
  • In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

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