• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.97-100
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• 2005

Dynamic response of organic light-emitting diodes were analyzed in $ITO/Alq_3$(100 nm)/Al device structure with a variation of voltage an frequency. At low frequency region, complex impedance is mostly governed by resistive component, and at high frequency region by capacitive component. Also, we have evaluated resistance, capacitance and permittivity of devices.

• 전기전자학회논문지
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• 제19권1호
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• pp.110-117
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• 2015

In this paper, a novel trench power MOSFET using a Separate-W-gated technique MOSFET (SWFET) is proposed. Because the SWFET has a very low $Q_{GD}$ compared to other forms of technology, it can be applied to high-speed power systems. The results found that the SWFET-applied $Q_{GD}$ was decreased by 40% when compared to simply using the more conventional trench gate MOSFET. $C_{ISS}$ (input capacitance : $C_{GS}+C_{GD}$), $C_{OSS}$ (output capacitance : $C_{GD}+C_{DS}$) and $C_{RSS}$ (reverse recovery capacitance : $C_{GD}$) were improved by 24%, 40%, and 50%, respectively. The switching characteristics of the inverter circuit shows a 24.9% enhancement of reverse recovery time, and the power efficiency of the DC-DC buck converter increased by 14.2%. In addition, the proposed SWFET does not require additional process steps and There was no degradation in the electrical performance of the current-voltage and on-resistance.

• Bulletin of the Korean Chemical Society
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• 제10권6호
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• pp.495-500
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• 1989

The ionic conductivity of polycrystalline, glass, and glass-ceramic silicates was measured using two-terminal AC method with blocking electrode over a frequency range of 100 Hz to 100 KHz in the temperature range of $200^{\circ}C$ to $320^{\circ}C$. Analysing the capacitance (C), susceptance (B), impedance (Z), and conductance (G) under the given conditions, an equivalent circuit containing temperature and frequency dependent component is proposed. Higher capacitance could be observed in the low frequency region and on the improved ionic migration conditions i.e., at higher temperature in a better ionic conductor. Also the electrode polarization built up at the electrode-specimen interface could be sorted out above 10 KHz. However, grain boundary contribution couldn't be extracted from the bulk resistance over the frequency range measured here.

• 한국항행학회논문지
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• 제15권4호
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• pp.596-601
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• 2011

본 논문에서는 간단한 회로구조와 높은 효율을 갖는 스위칭 방식의 E급 주파수 체배기에 대한 연구를 수행하였다. 주파수 체배는 능동소자의 비선형성에 의해 발생하는데 본 논문에서는 FET 능동소자를 간단한 스위치 및 기생소자 성분 모델로 근사하여 특성을 해석하고자 하였다. FET를 입력에 의해 동작하는 스위치 및 기생소자로 모델링하고 E급 주파수 체배기의 정합소자 값을 유도하였다. ADS시뮬레이터를 이용하여 출력 전압과 전류 파형 및 효율을 시뮬레이션하고 기생성분에 따른 변화를 연구하였다. 기생 커패시턴스, 저항, 인덕턴스에 의한 영향을 시뮬레이션하였으며 입력주파수 2.9GHz, 바이어스전압 2V일 때, 출력주파수 5.8GHz에서 기생커패시턴스가 0pF에서 1pF으로 변화함에 따라 드레인효율은 98%에서 28%로 감소하여 기생커패시턴스 CP가 FET의 기생 성분 중 가장 큰 영향을 끼친 것을 확인했다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1733-1736
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• 2005

Many studies have been carried out to produce 3D features in the size range between $10{\mu}m\~10,000{\mu}m$, called Meso-scale. If these miniaturized systems have high relative accuracy and good volumetric utilization, it is possible to manufacture more complex and accurate shapes with various materials as well as there are advantages of reducing energy, space and resources. Due to imperfect components and misalignment in assembly, it is necessary to assess the accuracy of the miniaturized system itself to obtain high relative accuracy. Laser interferometers are widely used to measure geometric errors called as quasi-static errors. For miniaturized system, however, it is difficult to install the required accessories such as optics and the measuring range is limited because of the size of the system and also this method is very expensive. Moreover, it is impossible to measure each error component simultaneously. A new system to measure simultaneously multiple geometric errors is proposed using capacitance sensors. Each error was measured using capacitance sensors and a measurement algorithm was mathematically derived. The experiments show that the proposed measurement system can be used effectively to assess the accuracy of miniaturized system at a low cost.

• 센서학회지
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• 제4권4호
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• pp.29-40
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• 1995

본논문(本論文)에서는 정전유도(靜電誘導) 트랜지스터의 잡음원인분석(雜音原因分析)을 위하여 직류(直流) 및 잡음특성(雜音特性), 잔존성분(殘存成分), 입력용량등(入力容量等)의 정무화(定武化)에 필요(必要)한 잡음(雜音) 등가회로(等價回路)를 제안(提案)하였다. 가장 단순(單純)한 잡음(雜音) 등가회로(等價回路)는 정전유도(靜電誘導) 트랜지스터의 동작원리(動作原理)에 의한 모델이며, 이 모델에 의한 실측치(實測値)가 산탄(shot) 잡음(雜音)보다 작게 나타났다. 소스 저항(抵抗)이 삽입(揷入)된 등가회로(等價回路)에서는 소스 저항(抵抗)의 부귀환효과(負歸還效果)에 의하여 산탄 잡음(雜音)이 저감(低減)됨을 확인(確認)하였다. 정확(正確)한 잡음저감원인(雜音低減原因)을 분석(分析)하기 위하여 소스 저항(抵抗)과 드레인 저항(低抗)의 계산식(計算式)을 유도(誘導)하기 위한 등가회로(等價回路)를 제안(提案)하였다. 등가회로(等價回路) 확인(確認) 실험(實驗)에서는 잔존성분(殘存成分)에 대한 신호원저항(信號源抵抗)과 출력부하저항(出力負荷抵抗)의 영향(影響)은 작으며, 잔존성분(殘存成分)은 입력환산등가잡음저항(入力換算等價雜音抵抗)으로 나타낼 수 있다. 또한, 입력용량(入力容量)은 부하저항(負荷抵抗)이 $0{\Omega}$일 때 13.6pF이며, 게이트 배선등(配線等) 정전유도(靜電誘導) 트랜지스터 동작(動作)에 직접(直接) 관여(關與)하지 않는 용량(容量)은 10pF정도(程度)이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -3
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• pp.1878-1881
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• 2002

The capacitance of nonlinear component such as a CMOS inverter varies largely around the threshold voltage. We measured the far-end crosstalk of two parallel microstrip lines with the CMOS inverter load near the threshold voltage of the CMOS inverter, The negative voltage of the crosstalk agrees with that for a 4pF capacitor toad. The positive voltage of the crosstalk hardly changes of the amplitude of the input step voltage.

• 전기의세계
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• 제28권1호
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• pp.53-58
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• 1979

In the microwave heating system, a ferroresonant transformer is used to regulate the magnetron power fluctuation. For the simplification, nonlinear characteristics of the transformer and the magnetron are idealized to be piecewise linear. Dipped peak shape of the magnetron current is explained qualitatively by considering the fundamental and third harmonic frequency components in the circuit. Design equations providing the values of the leakage inductance, turn ratio of the transformer and the capacitance are derived analytically by cosnidering the fundamental frequency component only. The ferroresonant transformer is designed to obtain a required regulation and high input power factor from the derived design equations, and analytical calculations are compared with experimental measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1098-1101
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• 2003

Complex impedances with frequency and voltage variation were analyzed in ITO/$Alq_3$/Al device structure at thickness 100 nm and 200 nm of $Alq_3$, respectively. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by capacitive component. Also, we have evaluated resistance, capacitance and permittivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.115-118
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• 2003

Complex impedances with frequency and voltage variation were analyzed in $ITO/Alq_{3}/Al$(100nm)/Al device structure. At low frequency, complex impedance is mostly expressed by resistive component, and at the high frequency by capacitive component. Also, we have evaluated resistance, capacitance and permittivity.