참고문헌
- B. J. Baliga, "An overview of smart power technology," IEEE Trans. Electron Devices, vol. 38, no. 7, pp. 1568-1575, Jul. 1991. https://doi.org/10.1109/16.85151
- A. Gagliardi, "Planning Of Power Systems and Green Power Market," Power Tech Conference Proceedings, IEEE Bologna vol. 1, June. 2003.
- L. Lorenz, "Power Semiconductor Driving Technology for High Power Green Electronic Systems," VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on, pp. 1-2, April. 2012.
- R. P. Zingg, "On the specific on-resistance of high-voltage and power devices," IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 492-499, Mar. 2004. https://doi.org/10.1109/TED.2003.822948
- R. J. E. Hueting, E. A. Hijzen, A.W. Ludikhuize, and M. A. A. in't Zandt, "Switching performance of low-voltage n-channel trench MOSFETs," in Proc. ISPSD, 2002, pp. 177-180.
- R. J. E. Hueting, E. A. Hijzen, A. Heringa, A. W. Ludikhuize, and M. A. A. Zandt, "Gate-drain charge analysis for switching in power trench MOSFETs," IEEE Trans. Electron Devices, vol. 51, no. 8, pp. 1323-1330, Aug. 2004. https://doi.org/10.1109/TED.2004.832096
- M. Darwish, C. Yue, K. H. Lui, F. Giles, B. Chan, K.-I. Chen, D. Pattanayak, Q. Chen, K. Terrill, and K. Owyang, "W-gated trench power MOSFET (WFET)," Proc. Inst. Elect. Eng.-Circuits Devices Syst., vol. 151, no. 3, pp. 238-242, Jun. 2004. https://doi.org/10.1049/ip-cds:20040445
- M. Darwish, C. Yue, K. H. Lui, F. Giles, B. Chan, K. Chen, D. Pattanayak, Q. Chen, K. Terrill, and K. Owyang, "A new power W-gated trench MOSFET (WMOSFET) with high switching performance," in Proc. ISPSD, Cambridge, U.K., pp. 24-27. Apr. 14-17, 2003.
- Atlas User's Manual: Device Simulation Software, Silvaco Int., Santa Clara, CA, 2008.
- H.-R. Chang, Trench gate structure with thick bottom oxide, U.S. Patent 4 992 390, Feb. 12, 1991.
- Q. Jiang, M. Wang, Chen, "A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate" IEEE Trans. Electron Devices, vol. 57, no. 8, pp. 1972-1977. 7 Aug. 2010. https://doi.org/10.1109/TED.2010.2051247
- D.H. Cho and K. S. Kim "Trench Power MOSFET using Separate Gate Technique for Reducing Gate Charge" Journal of IKEEE, Vol. 16 pp. 283-289, December 2012. https://doi.org/10.7471/ikeee.2012.16.4.283
- K. S. Nam, J. W. Lee, S. G. Kim, T. M. Roh, H. S. Park, J. G. Koo, and K. I. Cho, "A novel simplified process for fabricating a very high density P-channel trench gate power MOSFET," IEEE Electron Device Lett., vol. 21, no. 7, pp. 365-367, Jul. 2000. https://doi.org/10.1109/55.847382
- M. H. Juang, W. T. Chen, C. I. Ou-Yang, S. L. Jang, M. J. Lin, and H. C. Cheng, "Fabrication of trench-gate power MOSFETs by using a dual doped body region," Solid State Electron., vol. 48, no. 7, pp. 1079-1085, Jul. 2004. https://doi.org/10.1016/j.sse.2003.07.007
- B. J. Baliga, Modern Power Devices, 2nd ed. New York: Wiley, 1992.
- B. J. Baliga, Fundamentals of Power Semiconductor Devices, New York, Springer, 2008.
- C. K. Ong, "A mathematical model for power MOSFET capacitances" Power Electronics Specialists Conference, 1991. PESC '91 Record, 22nd Annual IEEE pp. 423-429 Jun. 1991.
- Y. Xiong, S. Sun, H. Jia, P. Shea, and Z.J. Shen, "New Physical insight on power MOSFET switching losses," Power Electronics, IEEE Transactions on, vol. 24, no. 2, pp. 525-531, Feb. 2009. https://doi.org/10.1109/TPEL.2008.2006567
- C. Cavallaro, S. Musumeci, R. Pagano, A. Raciti, and K. Shenai, "Analysis modeling and simulation of low-voltage MOSFETs in synchronous-rectifier buck-converter applications," Industrial Electronics Society, 2003. IECON '03. The 29th Annual Conference of the IEEE, vol. 2, pp. 1697-1702, Nov. 2003.
- Schmidt and Wolfgang "DCDC Converter for Hybrid Vehicle Applications," Integrated Power Systems (CIPS), 2008 5th International Conference on, pp. 1-3, Mar. 2008.
- P. Ralston Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs master dissertation, Blacksburg, VA, 2008
피인용 문헌
- The Trench Power MOSFET—Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability vol.64, pp.3, 2017, https://doi.org/10.1109/TED.2017.2655149