• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.937-940
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• 2000

This paper describes expandable 4 bit ALU IC using adiabatic and dynamic CMOS circuit technique. It was designed so that the integrated circuit may have the function which is equivalent to HC181 which is CMOS standard logic IC for the comparison, and it was fabricated using a standard 1.2${\mu}$ CMOS process. As the result, the IC has shown that it operates perfectly on all function modes. The power dissipation is 2 order lower than that of HC 181.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.148-151
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• 2005

This paper proposes a high speed interface using redundant multi-valued logic for high speed communication ICs. This circuit is composed of encoding circuit that serial binary data are received and converted into parallel redundant multi-valued data, and decoding circuit that convert redundant multi-valued data to parallel binary data. Because of the multi-valued data conversion, this circuit makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, a 1:4 demultiplexer (DEMUX, serial-parallel converter) IC was designed using a 0.35${\mu}m$ standard CMOS Process. Proposed demultiplexer is achieved an operating speed of 3Gb/s with a supply voltage of 3.3V and with power consumption of 48mW. Designed circuit is limited by maximum operating frequency of process. Therefore, this circuit is to achieve CMOS communication ICs with an operating speed greater than 3Gb/s in submicron process of high of operating frequency.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1543-1546
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• 2002

The expandable 4 bit adder/subtracter IC was designed using the adiabatic and dynamic CMOS logic (ADCL) circuit as the ultra-low power consumption basic logic circuit and the IC was fabricated using a standard 1.2 ${\mu}$ CMOS process. As the result the steady operation of 4 bit addition and subtraction has been confirmed even if the frequency of the sinusoidal supply voltage is higher than 10MHz. Additionally, by the simulation, at the frequency of 10MHz, energy consumption per operation is obtained as 93.67pJ (ar addition and as 118.67pJ for subtraction, respectively. Each energy is about 1110 in comparison with the case in which the conventional CMOS logic circuit is used. A simple and low power oscillation circuit is also proposed as the power supply circuit f3r the ADCL circuit. The oscillator operates with a less one volt of DC supply voltage and around one milli-watts power dissipation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.745-752
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• 2018

ICs(Integrated circuits) for nuclear power plant exposed to radiation environment occur malfunctions and data errors by the TID(Total ionizing dose) effects among radiation-damage phenomenons. In order to protect ICs from the TID effects, this paper proposes a radiation-hardening of the logic circuit(D-latch) which used for the data synchronization and the clock division in the ICs design. The radiation-hardening technology in the logic device(NAND) that constitutes the proposed RH(Radiation-hardened) D-latch is structurally more advantageous than the conventional technologies in that it keeps the device characteristics of the commercial process. Because of this, the unit cell based design of the RH logic device is possible, which makes it easier to design RH ICs, including digital logic circuits, and reduce the time and cost required in RH circuit design. In this paper, we design and modeling the structure of RH D-latch based on commercial $0.35{\mu}m$ CMOS process using Silvaco's TCAD 3D tool. As a result of verifying the radiation characteristics by applying the radiation-damage M&S (Modeling&Simulation) technique, we have confirmed the radiation-damage of the standard D-latch and the RH performance of the proposed D-latch by the TID effects.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.14 no.3
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• pp.189-196
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• 1989

In this paper, BICMOS gate array technology that has CMOS devices for logic applications and bipolar devices for driver applications is presented. An optimized poly gate p-well CMOS process is chosen to fabricate the BICMOS gate array system and the basic concepts to design these devices are to improve the characteristics of bipolar & CMOS device with simple process technology. As the results hFE value is 120(Ic=1mA) for transistor, and there is no short channel effects for CMOS devices which have Leff to 1.25um and 1.35um for n-channel, respectively, 0.8nx gate delay time of 41 stage ring oscillators is obtained.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.397-409
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• 1993

This paper proposed the design methodology of the 8 bit binary parallel adder with carry book-ahead scheme via current-mode CMOS multivalued logic and simulated the proposed adder under $5{\mu}m$ standard IC process technology. The threshold conditions of $G_K$ and $P_K$ which are needed for m-valued parallel adder with CLA are evaluated and adopted for quaternary logic. The design of quaternary CMOS logic circuits, encoder, decoder, mod-4 adder, $G_K$ and $P_K$ detecting circuit and current-voltage converter is proposed and is simulated to prove the operations. These circuits are necessary for binary arithmetic using multivalued logic. By comparing with the conventional binary adder and the CCD-MVL adder, We show that the proposed adder cab be designed one look-ahead carry generator with 1-level structure under standard CMOS technology and confirm the usefulness of the proposed adder.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.29B no.9
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• pp.27-36
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• 1992

A design of scanning electrode driving IC chip has been implemented aiming at the application to liquid crystal color television displays. The chip reflects the design characteristics of high quality liquid crystal panels and satisfies specifications of NTSC type color television displays. The design was verified using logic and circuit simulation, and fabricated using a high voltage CMOS process. A fully working die has been obtained that can be readily applicable to commercial color liquid crystal panels.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.63-75
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• 1993

As the CMOS technology becomes the most dominant circuit realization method, the cost problem for the test which includes both the transistor-level FET stuck-on and stuck-off faults and the gatelevel stuck-at faults becomes more and more serious. In accordance, this paper proposes a test set and its generation algorithm, which handles both the transistor-level faults and the gate-level faults, thus can unify the test steps during the IC design and fabrication procedure. This algorithm uses only the logic equation of the given logic function as the input resource without referring the transistor of gate circuit. Also, the resultant test set from this algorithm can improve in both the complexity of the generation algorithm and the time to apply the test as well as unify the test steps in comparing the existing methods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.9
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• pp.535-540
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• 2017

The changes in the electrical characteristics of CMOS ICs due to coupling with a narrow-band electromagnetic wave were analyzed in this study. A magnetron (3 kW, 2.45 GHz) was used as the narrow-band electromagnetic source. The DUT was a CMOS logic IC and the gate output was in the ON state. The malfunction of the ICs was confirmed by monitoring the variation of the gate output voltage. It was observed that malfunction (self-reset) and destruction of the ICs occurred as the electric field increased. To confirm the variation of electrical characteristics of the ICs due to the narrow-band electromagnetic wave, the pin-to-pin resistances (Vcc-GND, Vcc-Input1, Input1-GND) and input capacitance of the ICs were measured. The pin-to-pin resistances and input capacitance of the ICs before exposure to the narrow-band electromagnetic waves were $8.57M{\Omega}$ (Vcc-GND), $14.14M{\Omega}$ (Vcc-Input1), $18.24M{\Omega}$ (Input1-GND), and 5 pF (input capacitance). The ICs exposed to narrow-band electromagnetic waves showed mostly similar values, but some error values were observed, such as $2.5{\Omega}$, $50M{\Omega}$, or 71 pF. This is attributed to the breakdown of the pn junction when latch-up in CMOS occurred. In order to confirm surface damage of the ICs, the epoxy molding compound was removed and then studied with an optical microscope. In general, there was severe deterioration in the PCB trace. It is considered that the current density of the trace increased due to the electromagnetic wave, resulting in the deterioration of the trace. The results of this study can be applied as basic data for the analysis of the effect of narrow-band high-power electromagnetic waves on ICs.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.499-500
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• 2008

In this paper, we design and implement the monolithic power factor correction IC for system power modules using a high voltage(50V) CMOS process. The power factor correction IC is designed for power applications, such as refrigerator, air-conditioner, etc. It includes low voltage logic, 5V regulator, analog control circuit, high-voltage high current output drivers, and several protection circuits. And also, the designed IC has standby detection function which detects the output power of the converter stage and generates system down signal when load device is under the standby condition. The simulation and experimental results show that the designed IC acts properly as power factor correction IC with efficient protective functions.