• Proceedings of the KAIS Fall Conference
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• 2000.10a
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• pp.199-202
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• 2000

STM-1 체계의 광통신 수신부 광모듈에 내장하기 위한 155.52 Mbps 리시버 ASIC을 0.65 ㎛ 실리콘 CMOS 기술을 이용하여 설계 제작하였다. 재작된 ASIC은 155.52 Mbps 데이터신호 재정형을 위한 제한 증폭기와 155.52 MHz 클럭을 추출하기 위한 클럭 추출 회로를 주축으로 구성되어 있다. 또한 이 리시버는 전원이 켜지는 초기 동사 상태에서나 동작 도중 데이터신호가 입력되지 않더라도 155.52 MHz 부근의 클럭주파수를 유지하여 항상 안정된 동작을 할 수 있게 하기 위한 수렴 보조 회로 및 LOS 감지 회로도 내장하고 있다. 측정 결과 설계된 리시버는 1 mV- 1 V의 넓은 입력 전압에 걸쳐 데이터 재정형이 이루어지며, 155.52 MHz의 안정된 클럭을 추출하고 있음을 알 수 있었다.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.149-156
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• 2013

This paper presents a hardware edge detector of image signal at pixel level of CMOS image sensor (CIS). The circuit detects edges of an image based on a bump circuit combining with the pixels. The APS converts light into electrical signals and the bump circuit compares the brightness between the target pixel and its neighbor pixels. Each column on CIS 64 by 64 pixels array shares a comparator. The comparator decides a peak level of the target pixel comparing with a reference voltage. The proposed edge detector is implemented using 0.18um CMOS technology. The circuit shows higher fill factor 34% and power dissipation by 0.9uW per pixel at 1.8V supply.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.467-468
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• 2008

In this paper, a logic family, the transmission gate CMOS(TG CMOS) is proposed, which combines the transmission gate and pass transistor resulting in a different configuration from traditional full CMOS. In the simulation, basic cells comprising this logic are designed and their dynamic responses are analyzed. The simulation shows their performance is exceeding that of conventional full CMOS.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.142-147
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• 2012

This paper presents a mixed-mode CMOS duty-cycle corrector (DCC) circuit that has a dynamic frequency scaling (DFS) counter and coarse and fine tuning adjustments. A higher duty-cycle correction accuracy and smaller jitter have been achieved by utilizing the DFS counter that reduces the bit-switching glitch effect of a digital to analog converter (DAC). The proposed circuit has been designed using a 0.18-${\mu}m$ CMOS process. The measured duty cycle error is less than ${\pm}1.1%$ for a wide input duty-cycle range of 25-75% over a wide freqeuncy range of 0.5-1.5 GHz.

• The Journal of the Acoustical Society of Korea
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• v.18 no.3
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• pp.43-48
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• 1999

IDDQ testing is one of current testing methodologies which increases circuit's reliability by means of finding defects which can't be detected by functional testing in CMOS circuits. In this paper, we design a Built-In Current Sensor(BICS) circuit, which can be embedded in chip under test, that performs IDDQ testing. Furthermore, it is designed for IDDQ testing of memories and implemented to carry out testing at high-speed by using small number of transistors.

• Journal of the Korean Institute of Intelligent Systems
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• v.10 no.5
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• pp.478-486
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• 2000

This paper proposes a design method that can minimize the power dissipation of CMOS digital circuits without affecting their optimal operation speeds. The proposed method is based on genetic algorithms(GAs) combined to the retiming technique, a circuit transformation technique of repositioning flip-flops. The proposed design method consists of two phases: the phase of retiming for optimizing clock periods and the phase of GA retiming for minimizing power dissipation. Experimental results using Synopsys Design Analyzer show that the proposed design method can reduce the critical path delay of example circuits by about 30-50% and improve the dynamic power performance of the circuits by about 1.4~18.4%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.8A
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• pp.644-649
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• 2003

Novel 622Mb/s burst-mode clock and data recovery (CDR) circuits with muxed oscillators are realized for passive optical network (PON) application. The CDR circuits are implemented with 0.35$\mu\textrm{m}$ CMOS process technology. Lock is accomplished on the first data transition and data are sampled in the optimal point. The experimental results show that the proposed CDR circuits recover the incoming 400Mbps-680Mbps burst mode input data without error.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.425-428
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• 2017

This paper describes a full-wave rectifiers for energy harvesting circuit using a vibrational energy. The designed circuit is applied to the negative voltage converter with the body-bias technique using the Beta-multiplier so that the power efficiency is excellent even at the low voltage, and the comparator is designed as the bulk-driven type. The proposed circuit is designed with $0.35{\mu}m$ CMOS process, and The designed chip occupies $931{\mu}m{\times}785{\mu}m$.

• Journal of IKEEE
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• v.12 no.1
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• pp.1-7
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• 2008

With the recent development of portable system such as mobile communication and multimedia. Full adders are important components in applications such as digital signal processors and microprocessors. Thus It is important to improve the power dissipation and operating speed for designing a full adder. We propose a new adder with modified version of conventional Ratioed logic and Pass Transistor logic. The proposed adder has the advantages over the conventional CMOS, TGA, 14T logic. The delay time is improved by 13% comparing to the average value and PDP(Power Delay Product) is improved by 9% comparing to the average value. Layouts have been carried out using a 0.18um CMOS design rule for evaluation purposes. The physical design has been evaluated using HSPICE.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.685-691
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• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, considering linearity, power consumption, chip area, and glitch energy. The low-glitch switch driving circuit is employed to improve the linearity and the dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core. The prototype DAC is implemented in a 0.35 urn n-well single-poly quad-metal CMOS technology. The measured DNL and INL of the prototype DAC are within $\pm$0.75 LSB and $\pm$1.73 LSB, respectively, and the spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of 2.2 mm ${\times}$ 2.0 mm.