• Title/Summary/Keyword: CL Surface

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Appearance Contamination of EPDM Article from Water Solution (EPDM 소재의 수용액으로부터의 외관 오염)

  • Choi, Sung-Seen;Chung, Hye-Seung;Joo, Yong-Tae;Yang, Kyung-Mo;Lee, Seong-Hoon
    • Elastomers and Composites
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    • v.45 no.2
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    • pp.100-105
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    • 2010
  • An EPDM article was aged in air, distilled water, tap water, NaCl/$CaCl_2$ solution, and $CaCl_2/FeCl_3$ solution for 7 days. The aging temperature was $90^{\circ}C$. The samples aged in air and distilled water did not appear the whitening, those aged in tap water, NaCl/$CaCl_2$ solution, and $CaCl_2/FeCl_3$ solution showed the whitening. Soluble organic materials were analyzed using GC/MS to identify the whitening materials, surface morphology of the aged sample surface was examined using image analyzer and SEM, and elemental analysis of the materials accumulated on the sample surface was performed using EDX. Principal reason to cause whitening might be formation of metal salt of fatty acid by reaction between metal cation and fatty acid.

Electric Conductivities of LaC $l_3$-LiCl Binary Melts (용융 LaC $l_3$-LiCl 2성분계 혼합염의 전도도)

  • Kim Ki-Ho
    • Journal of Surface Science and Engineering
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    • v.37 no.5
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    • pp.301-306
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    • 2004
  • Electric Conductivities of $LaCl_3$-LiCl binary melts have been measured by the Kohlausch bridge method over the range of their liquidus temperatures to about 1200 K. The electric conductivity increases with the content of LiCl for all over the composition range of binary melts. Composition dependence of the electric conductivity and molar conductivity for the binary melt shows a non-linear relation from the additivity line, and the deviations displays a maximum value at about 60 mol % LiCl. This suggest the existence of the complex ion of$ LaCl_{4}^{-}$ in the melt. Activation energy for electric conductivity of the binary melts decrease monotonously with increasing content of LiCl.l.

A study of dry cleaning for metallic contaminants on a silicon wafer using UV-excited chlorine radical (UV-excited chlorine radical을 이용한 실리콘 웨이퍼상의 금속 오염물의 건식세정에 관한 연구)

  • 손동수;황병철;조동률;김경중;문대원;구경완
    • Journal of the Korean Vacuum Society
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    • v.6 no.1
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    • pp.9-19
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    • 1997
  • The reaction mechanisms of dry cleaning with UV-excited chlorine radical for Zn, Fe and Ti trace contaminants on the Si wafer have been studied by SEM, AFM and XPS analyses in this work. The patterned Zn, Fe and Ti films were deposited on the Si wafer surface by thermal evaporation and changes in the surface morphology after dry cleaning with $Cl_2$and UV/$Cl_2$at $200^{\circ}C$ were studied by optical microscopy and SEM. In addition, changes in the surface roughness of Si wafer with the cleaning was observed by AFM. The chemical bonding states of the Zn, Fe and Ti deposited silicon surface were observed with in-line XPS analysis. Zn and Fe were easily cleaned in the form of volatile zinc-chloride and iron-chloride as verified by the surface morphology changes. Ti which forms involatile oxides was not easily removed at room temperature but was slightly removed by UV/$Cl_2$at elevated temperature of $200^{\circ}C$. It was also found that the surface roughness of the Si wafer increased after $Cl_2$and UV/$Cl_2$cleaning. Therefore, the metallic contaminants on the Si wafer can be easily removed at lower temperature without surface damage by a continuous process using wet cleaning followed by UV/$Cl_2$dry cleaning.

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Study of the Etched ZnO Thin Film Surface in the $BCl_{3}/Ar/Cl_{2}$ Plasma ($Cl_{2}/BCl_{3}$/Ar 플라즈마에 의해 식각된 ZnO 박막 표면의 연구)

  • U, Jong-Chang;Ha, Tae-Gyeong;Wi, Jae-Hyeong;Ju, Yeong-Hui;Eom, Du-Seung;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.264-265
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    • 2009
  • 본 연구에서 유도결합 플라즈마 식각 장치외 $BCl_3/Ar/Cl_2$ 가스 혼합비를 이용하여 ZnO 박막을 식각 하였을 때, 식각 된 ZnO 박막의 표면 반응에 관하여 관찰하였다. ZnO 박막의 식각 실험 조건은 RF 전력 700 W, 직류바이어스 전압 - 150 V, 공정 압력 15 mTorr로 고정하였고, $Cl_2/(Cl_2+BCl_3+Ar)$ 가스 혼합비를 변경하면서 식각 실험을 수행하였다. $Cl_2$ 가스가 3 sccm 일 때, ZnO 박막의 식각속도는 53 nm/min으로 가장 높았으며, 이때 ZnO 박막에 대한 $SiO_2$의 선택비는 0.89 이었다. 식각된 ZnO 박막의 표면은 XRD (X-ray diffraction)와 AFM(atomic force microscopy)를 이용하여 결정상의 변화와 표면의 거칠기를 분석하였다. AFM 분석 결과에서 Ar, $BCl_3$$Cl_2$ 플라즈마를 이용하여 식각된 시료의 표면 거칠기 근 값이 식각전의 시료나 $BCl_3/Ar/Cl_2$ 플라즈마로 식각된 시료보다 큰 것을 확인하였다. 이는 식각된 시료에서의 Zn 양의 감소나 비휘발성 식각 잔류물에 의한 영향으로 판단된다. SIMS(secondary ion mass spectrometery) 분석을 통해 검증 하였다.

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The Study on the surface of SBT Thin Film after Etching in Ar/$CI_2$ Plasma (Ar/$CI_2$ 식각 후 SBT 박막의 표면에 관한 연구)

  • 김동표;김창일;이원재;유병곤;김태형;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.363-366
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    • 2000
  • In this study, SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched at different Cl$_2$gas mixing ratio in Cl$_2$/Ar. The maximum etch rate of SBT was 883 $\AA$/min in Cl$_2$(20%)/Ar(80%). The result indicates that physical sputtering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the changes of morphology and crystallinity on the near surface of etched SBT, atomic force microscopy (AFM) and x-ray diffraction (XRD) were used. The rms values of etched samples in Ar only or Cl$_2$ only plasma were higher than that of as-deposited, Cl$_2$/Ar Plasma. The SBT (105) crystalinity of the etched samples decreased in Af only or Cla only plasma, but maintain constant in ClyAr plasma. This can be illustrated by a decrease of Bi content or nonvolatile etching products (Sr-Cl and Ta-Cl), resulting in the changes of stoichiometry on the etched surface of the SBT thin films. The decrease of Bi content and nonvolatile etch products were revealed by x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS).).

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Preparation of Activated Carbon from Waste Citrus Peels by ZnCl2 (ZnCl2를 이용하여 폐감귤박으로부터 활성탄 제조)

  • Kang, Kyung-Ho;Kam, Sang-Kyu;Lee, Min-Gyu
    • Journal of Environmental Science International
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    • v.16 no.9
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    • pp.1091-1098
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    • 2007
  • Activated carbon was prepared from waste citrus peels by chemical activation with $ZnCl_2$. The optimal condition of carbonization was at $300^{\circ}C$ for 1.5 hr. Activation experiments with carbonized samples prepared at optimal carboniztion condition were carried out under various conditions such as activation temperature of 400 to $900^{\circ}C$, activation time of 0.5 to 2.0 hr, and $ZnCl_2$ ratio of 100 to 300%. In order to investigate the physical properties of the activated carbons prepared, iodine adsorptivities and specific surface areas were measured and their morphologies were observed from scanning electron microscopy. As $ZnCl_2$ ratio increased, activation yield decreased, while iodine adsorptivity and specific surface area increased. The optimal condition of activation was at 300% $ZnCl_2$ ratio and $300^{\circ}C$ for 1.5 hr, and then iodine adsorptivity and specific surface area was measured as about 862 mg/g and $756m^2/g$, respectively. SEM photography showed that the surface morphology was changed and many active pore were produced by chemical activation.

A Study of the Etched ZnO Thin Films Surface by Reactive Ion in the Cl2/BCl3/Ar Plasma (Cl2/BCl3/Ar 플라즈마에서 반응성 이온들에 의해 식각된 ZnO 박막 표면 연구)

  • Woo, Jong-Chang;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.10
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    • pp.747-751
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    • 2010
  • In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.

Effect of Plasma Etching and $PdCl_2/SnCl_2$ Catalyzation on the Performance of Electroless Plated Copper Layer (플라즈마 에칭 및 $PdCl_2/SnCl_2$ 촉매조건이 무전해 동도금 피막의 성능에 미치는 영향)

  • 오경화;김동준;김성훈
    • Journal of the Korean Society of Clothing and Textiles
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    • v.27 no.7
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    • pp.843-850
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    • 2003
  • Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless plated Cu layer and polyester (PET) film, the effect of pretreatment conditions such as etching method, mixed catalyst composition were investigated. Chemical etching and plasma treatment increased surface roughness in decreasing order of Ar>HCl>O$_2$>NH$_3$. However, adhesion of Cu layer on PET film increased in the following order: $O_2$<Ar<HCl<NH$_3$. It indicated that appropriate surface roughness and introduction of affinitive functional group with Pd were key factors of improving adhesion of Cu layer. PET film was more finely etched by HCI tolution, resulting in an improvement in adhesion between Cu layer and PET film. Plasma treatment with NH$_3$produced nitrogen atoms on PET film, which enhances chemisorption of Pd$^{2+}$ on PET film, resulting in improved adhesion and shielding effectiveness of Cu layer deposited on the Pd catalyzed surface. Surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$; SnCl$_2$from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, adhesion and shielding effectiveness of Cu plated PET film were increased.d.

An experiment of the particle deposition on a circular cylinder in a laminar flow (원관 주위 유하 액막에 의한 관 외벽에서의 입자 부착에 대한 실험)

  • 정종수;이윤표;정기만;박찬우
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.12 no.2
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    • pp.113-119
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    • 2000
  • An experimental study has been carried out in order to investigate on a particle deposition on a circular cylinder surface. The present study is focused on the particulate fouling occurring in a heat exchanger for a seawater desalinization, in a laminar flow over circular cylindrical tubes. The objective is to investigate how NaCl concentration influences the $SiO2$ particle deposition on the surface of a glass circular cylinder. The NaCl concentration was changed from 0 g/L to 40 g/L. As the experimental results of $SiO2$ particle which is deposited on the glass circular cylinder surface showed, particle deposition rate per unit time increases rapidly with the increase of NaCl concentration between 0 g/L and 15 g/L. After the maximum of particle deposition rate was found at the NaCl concentration of 15 g/L, particle deposition rate remains unchanged or decreases gradually with the NaCl concentration from 15 g/L to 40 g/L. Also the $SiO2$ deposition rate of particles does not have serious variations with the position at present glass surface.

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Cosmetic Corrosion of 11 % Cr and 17 % Cr Ferritic Stainless Steels for Automotive Exhaust Systems in an Environment containing Deicing Salts (제설염 환경에서 자동차 배기계용 11% Cr, 17% Cr 페라이트 스테인리스강의 외면부식특성)

  • Beom, Won-Jin;Park, Chan-Jin;Kim, Yeong-Ho;Yu, Han-Jin
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.31-31
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    • 2008
  • 복합 싸이클 시험 모니터링을 통해 NaCl, $CaCl_2$ 제설염 환경에서 11 % Cr, 17 % Cr 페라이트 스테인리스강의 외면부식특성을 조사하고자 하였다. 용액 내 NaCl 및 $CaCl_2$의 농도가 증가함에 따라 용액의 pH가 떨어졌으며, $CaCl_2$의 농도증가에 따른 산성화도가 NaCl에 비해 크게 나타났다. 염수분무-건조-습윤 과정의 반복으로 구성되어 있는 복합싸이클 시험 중 소재의 표면상태 변화를 모니터링 한 결과, 건조 과정 중에 공식이 시작되며, NaCl 환경의 경우엔 습윤과정 중에 $CaCl_2$ 환경의 경우엔 건조 중에 공식성장이 주로 이루어지는 것으로 확인되었다.

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