• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.641-648
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• 2002

The study on the chip waveform design to minimize multiple-access interference (MAI) and its performance evaluation are very important since chip waveform decides the signal quality and system capacity of the direct-sequence CDMA wireless communication system. This paper suggests the analytical chip waveform to minimize the MAI. The BER and throughput performances achieved by the proposed analytical optimum chip waveform are compared with those of the conventional chip waveforms in the Nakagami-m distribution frequency selective channel when the differential phase shift keying (DPSK) is employed in DS-CDMA system. From the numerical results, capacity and throughput are improved about 2 times and 1.4 times respectively when it is compared with the Kaiser chip waveform that is considered as one of the best in the conventional ones.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.33-37
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified fer other bonding methods such as ACF.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.583-591
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• 2000

It this paper the multilayer chip band pass filter for next generation mobile communication phone is fabricated and designed. For the design the multilayer chip filter of non-contented equivalent circuit and contented equivalent circuit with attenuation pole is presented. Finally it is fabricated and designed using the multilayer chip filter of contented equivalent circuit with attenuation pole. The size insertion loss center frequency and band width of multilayer chip filter are 4.5$\times$3.2$\times$2.0[mm], 3.0[d.B] and 1945$\pm$25 MHz respectively. The multilayer chip filter was fabricated by screen printing with Ag electrode after tape casting. Simulation results of multilayer chip filter are compared with experimental results and found to be in excellent agreements.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.924-927
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• 2003

In this paper, we design the memory tester chip set playing an important role in the memory tester as central parts. Memory tester has the sixteen inner instructions to control the test sequence and the address and data signals to DUT. These instructions are saved in memory with each chip such as sequence chip and address/data generator chip. Sequence chip controls the test sequence according to instructions saved in the memory. And Generator chip generates the address and data signals according to instructions saved in the memory, too.

• Journal of the Semiconductor & Display Technology
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• v.8 no.2
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• pp.15-21
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• 2009

Atmospheric pressure plasma equipment was successfully applied to the flip chip BGA manufacturing process to improve the uniformity of flux printing process. The problem was characterized as shrinkage of the printed flux layer due to insufficient surface energy of the flip chip BGA substrate. To improve the hydrophilic characteristics of the flip chip BGA substrate, remote DBD type atmospheric pressure plasma equipment was developed and adapted to the flux print process. The equipment enhanced the surface energy of the substrate to reasonable level and made the flux be distributed over the entire flip chip BGA substrate uniformly. This research was the first adaptation of the atmospheric pressure plasma equipment to the flip chip BGA manufacturing process and a lot of possible applications are supposed to be extended to other PCB manufacturing processes such as organic cleaning, etc.

• Journal of the Korean Society for Precision Engineering
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• v.10 no.4
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• pp.206-215
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• 1993

The finite element method is applied to analyze the mechanism of metal cutting, especially micro metal cutting. This paper introduces some effects, such as constitutive deformation laws of workpiece material, friction of tool-chip contact interfaces, tool rake angle and also simulate the cutting process, chip formation and geometry, tool-chip contact, reaction force of tool. Under the usual plane strain assumption, quasi-static analysis were performed with variation of tool-chip interface friction coefficients and tool rake angles. In this analysis, cutting speed, cutting depth set to 8m/sec, 0.02mm, respectively. Some cutting parameters are affected to cutting force, plastic deformation of chip, shear plane angle, chip thickness and tool-chip contact length and reaction forces on tool. Several aspects of the metal cutting process predicted by the finite element analysis provide information about tool shape design and optimal cutting conditions.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.259-269
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• 2012

With the lower supply voltage and the higher operating frequency in integrated circuits, the analysis of the power distribution network (PDN) including on-chip inductances becomes more important. In this paper, an effective inductance extraction method for a regular on-chip power grid structure is proposed. The loop inductance model applicable to chip layout is proposed and the inductance extraction tool using the proposed inductance model based on post layout RC circuits is developed. The accuracy of the proposed loop model and the developed tool is verified by comparing the test circuit simulation results with those from the partial element equivalent circuit (PEEC) model. The voltage fluctuation from the RLC circuits extracted by the developed tool was examined for the analysis of on-chip inductance effects. The significance of on-chip power grid inductance was investigated by the co-simulation of chip-package-PCB.

• Journal of Chest Surgery
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• v.50 no.3
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• pp.153-162
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• 2017

Background: The mesenchymal-epithelial transition factor (MET) receptor can be overexpressed in solid tumors, including small cell lung cancer (SCLC). However, the molecular mechanism regulating MET stability and turnover in SCLC remains undefined. One potential mechanism of MET regulation involves the C-terminus of Hsp70-interacting protein (CHIP), which targets heat shock protein 90-interacting proteins for ubiquitination and proteasomal degradation. In the present study, we investigated the functional effects of CHIP expression on MET regulation and the control of SCLC cell apoptosis and invasion. Methods: To evaluate the expression of CHIP and c-Met, which is a protein that in humans is encoded by the MET gene (the MET proto-oncogene), we examined the expression pattern of c-Met and CHIP in SCLC cell lines by western blotting. To investigate whether CHIP overexpression reduced cell proliferation and invasive activity in SCLC cell lines, we transfected cells with CHIP and performed a cell viability assay and cellular apoptosis assays. Results: We found an inverse relationship between the expression of CHIP and MET in SCLC cell lines (n=5). CHIP destabilized the endogenous MET receptor in SCLC cell lines, indicating an essential role for CHIP in the regulation of MET degradation. In addition, CHIP inhibited MET-dependent pathways, and invasion, cell growth, and apoptosis were reduced by CHIP overexpression in SCLC cell lines. Conclusion: C HIP is capable of regulating SCLC cell apoptosis and invasion by inhibiting MET-mediated cytoskeletal and cell survival pathways in NCI-H69 cells. CHIP suppresses MET-dependent signaling, and regulates MET-mediated SCLC motility.

• Journal of electromagnetic engineering and science
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• v.11 no.4
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• pp.282-289
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• 2011

GHz electromagnetic interference (EMI) characteristics are analyzed for a 3dimensional (3D) stacked chip power distribution network (PDN) with through silicon via (TSV) connections. The EMI problem is mostly raised by P/G (power/ground) noise due to high switching current magnitudes and high PDN impedances. The 3D stacked chip PDN is decomposed into P/G TSVs and vertically stacked capacitive chip PDNs. The TSV inductances combine with the chip PDN capacitances produce resonances and increase the PDN impedance level in the GHz frequency range. These effects depend on stacking configurations and P/G TSV designs and are analyzed using the P/G TSV model and chip PDN model. When a small size chip PDN and a large size chip PDN are stacked, the small one's impedance is more seriously affected by TSV effects and shows higher levels. As a P/G TSV location is moved to a corner of the chip PDNs, larger PDN impedances appear. When P/G TSV numbers are enlarged, the TSV effects push the resonances to a higher frequency range. As a small size chip PDN is located closer to the center of a large size chip PDN, the TSV effects are enhanced.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.1-10
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• 2018

Recently, there has been rapid development in the field of flexible electronic devices, such as organic light emitting diodes (OLEDs), organic solar cells and flexible sensors. Encapsulation process is added to protect the flexible electronic devices from exposure to oxygen and moisture in the air. Using numerical simulation, we investigated the effects of the encapsulation layer on mechanical stability of the silicon chip, especially the fracture performance of center crack in multi-layer package for various loading condition. The multi-layer package is categorized in two type - a wide chip model in which the chip has a large width and encapsulation layer covers only the chip, and a narrow chip model in which the chip covers both the substrate and the chip with smaller width than the substrate. In the wide chip model where the external load acts directly on the chip, the encapsulation layer with high stiffness enhanced the crack resistance of the film chip as the thickness of the encapsulation layer increased regardless of loading conditions. In contrast, the encapsulation layer with high stiffness reduced the crack resistance of the film chip in the narrow chip model for the case of external tensile strain loading. This is because the external load is transferred to the chip through the encapsulation layer and the small load acts on the chip for the weak encapsulation layer in the narrow chip model. When the bending moment acts on the narrow model, thin encapsulation layer and thick encapsulation layer show the opposite results since the neutral axis is moving toward the chip with a crack and load acting on chip decreases consequently as the thickness of encapsulation layer increases. The present study is expected to provide practical design guidance to enhance the durability and fracture performance of the silicon chip in the multilayer package with encapsulation layer.