• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05c
• /
• pp.29-32
• /
• 2001

We measured the electron transport coefficients(the electron drift velocity, W, and the longitudinal diffusion coefficient, $D_L$) in pure $CF_4$ over the E/N range from 0.04 Td to 250 Td by the double shutter drift tube. And these electron transport coefficients in pure $CF_4$ were calculated over the E/N range from 0.01 to 250 Td at 1 Torr by using the two-term approximation of the Boltzmann equation.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2006.04a
• /
• pp.85-85
• /
• 2006

• Proceedings of the Korean Nuclear Society Conference
• /
• 2001.05a
• /
• pp.373-373
• /
• 2001

• Proceedings of the Korea Air Pollution Research Association Conference
• /
• 2010.04a
• /
• pp.198-200
• /
• 2010

• Proceedings of the Korean Nuclear Society Conference
• /
• 1999.10a
• /
• pp.300-300
• /
• 1999

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.1
• /
• pp.32-36
• /
• 2014

In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.860-863
• /
• 2002

In this study, Ag thin films deposited on LCD-grade glass were etched using inductively coupled fluorine-based plasmas and the effect of various $CF_4$-based gas mixtures on the Ag etching characteristics were studied. When $CF_4$-based gas mixtures were used with $N_2$, due to the very low vapor pressure of etch products, etch products remained on the substrate after the etching. However, when $CF_4$ used with Ar, residue-free Ag etching could be obtained due to the removal of etch product by sputtering by $Ar^+$ ions.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.05a
• /
• pp.255-258
• /
• 2002

In this study, $CeO_2$thin films were etched with an addition of $Cl_2$gas to $Ar/CF_4$gas mixing in an inductively coupled plasma(ICP) etcher. The surface reactions of the etched $_CeO2$thin films were investigated by X-ray photoelectron spectroscopy(XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$or $CeO_3$compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_{x}$ compounds.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.6
• /
• pp.916-922
• /
• 1986

In this paper, the measurement of RF discharge plasma parameters is studied both analytically and experimentally by the electric probe method. In the measurement using an electric probe, we measure the parameters of plasma in CF4 etching gas and discuss the relations of the results and Si wafer etching. Also, we show that the electric probe method is attractive for various applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.912-916
• /
• 2002

In this paper, the $CF_4$ decomposition rate and by-product were investigated for a simulated two plasma reactors which are metal particle reactor and spiral wire reactor as function of mixed gases. The $CF_4$ decomposition rate by plasma reactor with metal particle electrode had a gain of 20~25[%] over that by plasma reactor with spiral wire electrode. The $CF_4$ decomposition efficiency increases with increasing applied voltage up to the critical voltage for spark formation. The $CF_4$ decomposition efficiency of metal particle reactor was about 80[%] at AC 24[kV]. The $CF_4$ decomposition rate used $Ar-N_2$ as base gas was the highest among three base gases of $N_2$, $Ar-N_2$, air. The by-products of the $N_2$, $Ar-N_2$ base as were similar, but in case of air base they were different.