Characteristics of Ag Etching using Inductively Coupled Halogen-based Plasmas

In this study, Ag thin films deposited on LCD-grade glass were etched using inductively coupled fluorine-based plasmas and the effect of various $CF_4$-based gas mixtures on the Ag etching characteristics were studied. When $CF_4$-based gas mixtures were used with $N_2$, due to the very low vapor pressure of etch products, etch products remained on the substrate after the etching. However, when $CF_4$ used with Ar, residue-free Ag etching could be obtained due to the removal of etch product by sputtering by $Ar^+$ ions.