Proceedings of the International Microelectronics And Packaging Society Conference (한국마이크로전자및패키징학회:학술대회논문집)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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An Investigation on the Surface Reactions after the Etching of $CeO_2$ Thin Films using High Denstity Inductively Coupled $C1_2CF_4Ar$Ar Plasmas

고밀도 유도결합 $C1_2CF_4Ar$ 플라즈마를 이용한 $CeO_2$ 박막 식각후 표면반응에 관한 연구

  • 장윤성 (중앙대학교 전자전기공학부) ;
  • 김남훈 (중앙대학교 전자전기공학부) ;
  • 김경섭 (여주대학 전자학과) ;
  • 이병기 (중앙대학교 전자전기공학부) ;
  • 엄준철 (중앙대학교 전자전기공학부) ;
  • 김태형 (여주대학 전기학과) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2002.05.01
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Abstract

In this study, $CeO_2$thin films were etched with an addition of $Cl_2$gas to $Ar/CF_4$gas mixing in an inductively coupled plasma(ICP) etcher. The surface reactions of the etched $_CeO2$thin films were investigated by X-ray photoelectron spectroscopy(XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$or $CeO_3$compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_{x}$ compounds.

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