Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Dry Etching Characteristics of TiO2 Thin Films in N2/CF4/Ar Plasma

  • Choi, Kyung-Rok (Department of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Woo, Jong-Chang (Department of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Joo, Young-Hee (Department of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Chun, Yoon-Soo (Department of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (Department of Electrical and Electronics Engineering, Chung-Ang University)
  • Received : 2013.07.11
  • Accepted : 2013.12.23
  • Published : 2014.02.25
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Abstract

In this study, the etching characteristics of titanium dioxide ($TiO_2$) thin films were investigated with the addition of $N_2$ to CF4/Ar plasma. The crystal structure of the $TiO_2$ was amorphous. A maximum etch rate of 111.7 nm/min and selectivity of 0.37 were obtained in an $N_2/CF_4/Ar$ (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700 W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured as functions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. We used X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched $TiO_2$ thin films. To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used to examine the surface morphology and roughness of $TiO_2$ thin films.

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References

  1. J. Yan, D.C. Gilmer, S.A. Campbell, W.L. Gladfelter, P.G. Schmid. J. Vac. Sci. Technol. B 14 (1996) 1706. https://doi.org/10.1116/1.589214
  2. S.A. Campbell, D.C. Gilmer, X. Wang, M.T. Hsieh, H.S. Kim, W.L. Gladfelter, J. Yan. IEEE Electron Devices. 44 (1997) 104. https://doi.org/10.1109/16.554800
  3. G.D. Wilk, R.M. Wallance, J.M. Anthony. J. Appl. Phys. 89 (2001) 5243. https://doi.org/10.1063/1.1361065
  4. J.C. Woo, Y.H. Joo, C.I. Kim, Jpn J. Appl. Phys. 50 (2011) 08KC02. https://doi.org/10.7567/JJAP.50.08KC02
  5. R. d'Agostino, F. Fracassi, C. Pacifico, P. Capezzuto. J. Appl. Phys. 71 (1992) 462. https://doi.org/10.1063/1.350679
  6. N.M. Muthukrishnan, K. Amberialdis, A.E. Riad, J. Electrochem. Soc. 144 (1997) 1780. https://doi.org/10.1149/1.1837679
  7. G.H. Kim, C.I. Kim, J. Vac. Sci. Technol. A 24 (2006) 1514.
  8. J.K. Jung, W.J. Lee, Jpn J. Appl. Phys. 40 (2001) 1408. https://doi.org/10.1143/JJAP.40.1408
  9. D.R. Lide : CRC Handbook of Chemistry and physics (CRC Press, Boca Raton, 1994) 75th ed.
  10. T. Smith, Surf. Sci. 32 (1972) 527. https://doi.org/10.1016/0039-6028(72)90180-X
  11. X. Yang, J.C. Woo, D.S. Um, C.I. Kim, Trans. Electr. Electron. Mater. 11 (2010) 202. https://doi.org/10.4313/TEEM.2010.11.5.202
  12. A.M. Efremov, D.P. Kim, C.I. Kim, Thin Solid Films. 435 (2003) 83 https://doi.org/10.1016/S0040-6090(03)00378-X
  13. I. Bertoti, M. Mohai, J.L. Sullivan, S.O. Saied, Appl. Surf. Sci. 84 (1995) 357. https://doi.org/10.1016/0169-4332(94)00545-1
  14. S. Norasetthekul, P.Y. Park, K.H. Baik, K.P. Lee, B.S. Jeong, V. Shishodia, E.S. Lambers, D.P. Norton, S.J. Pearton, Appl. Surf. Sci 185 (2001) 27. https://doi.org/10.1016/S0169-4332(01)00562-1
  15. R. d'Agostino, F. Fracassi, C. Pacifico, J. Appl. Phys. 72 (1992) 4351. https://doi.org/10.1063/1.352199
  16. G. Chiarello, R. Barberi, A. Amoddeo, L.S. Caputi, E. Colavita, Appl. Surf. Sci, 99 (1996) 15. https://doi.org/10.1016/0169-4332(95)00451-3
  17. Z.H. Liu, N.M.D. Brown, A. Mckinley, Appl. Surf. Sci. 108 (1997) 319. https://doi.org/10.1016/S0169-4332(96)00683-6

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