• 제목/요약/키워드: C-O bond

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Effect of the Residual Impurity on the Prepreg Surface on the Wettability of Encapsulant for Chip on Board Package (칩 온 보드 패키지 적용을 위한 프리프레그 표면 잔류 불순물이 봉지재의 젖음성에 미치는 영향)

  • Gahui Kim;Doheon Kim;Kirak Son;Young-Bae Park
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.2
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    • pp.9-15
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    • 2024
  • The effect of the residual impurity on the prepreg surface on the wettability of encapsulant for chip on board package was analyzed with microstructure, compositions and chemical bonds using a scanning electron microscope and X-ray photoelectron spectroscopy. As a result, the contact angle of w/ residual impurity sample was measured to be 28° higher than that of w/o residual impurity sample, and the C-O bond was decreased to be 4% lower than that of w/o residual impurity sample. The surface energy of the prepreg decreased because the impurity ions, Na and F, generated by the manufacturing process and wet etching, reacted chemically with the C on the prepreg surface, forming C-F bonds and breaking the C-O bonds on the prepreg surface. Therefore, the wettability of the encapsulant was degraded because the contact angle between the encapsulant and the prepreg was increased.

Metal-Ion Interactions with Sugars. The Crystal Structure of CaCl2-Fructose Complex

  • Guo, Jianyu;Lu, Yan;Whiting, Roger
    • Bulletin of the Korean Chemical Society
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    • v.33 no.6
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    • pp.2028-2030
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    • 2012
  • The single-crystal structure of $CaCl_2{\cdot}2C_6H_{12}O_6{\cdot}3H_2O$ was determined with Mr=525.34, a=16.054(7) ${\AA}$, b=7.864(4) ${\AA}$, c=10.909(5) ${\AA}$, ${\beta}=127.894(8)^{\circ}$, V=1086.9(9) ${\AA}^3$, C2, Z=2 and $R$=0.0227 for 1727 observed reflections. The fructose moiety of the complex exists as a ${\beta}$-D-pyranose. The calcium ion is surrounded by eight oxygen atoms, These are arranged in symmetry-related pairs derived from four sugar and two water molecules. Three nonvicinal hydroxyl groups of fructose are involved in calcium binding. All the hydroxyl groups and water molecules are involved in forming an extensive hydrogen-bond network.

Reaction Characteristics of Cu/CeO2 Catalysts for CO Oxidation (일산화탄소 산화반응을 위한 Cu/CeO2 촉매의 반응특성)

  • Kim, Su Bin;Kim, Min Su;Kim, Se Won;Hong, Sung Chang
    • Applied Chemistry for Engineering
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    • v.30 no.5
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    • pp.620-626
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    • 2019
  • In this study, the effects of the structural properties of the catalyst on CO oxidation reaction by controlling the $Cu/CeO_2$ catalyst amount and calcination temperature were studied, and also the CO conversion rate of the catalyst at the temperature range of $100{\sim}300^{\circ}C$ was evaluated. XRD, Raman, BET, $H_2-TPR$, and XPS analyses were performed to confirm the effect of changes in the structural properties on the chemical properties of the catalyst. The result confirmed that a substitution bond between Cu and Ce was formed and a lot of Cu and Ce bonds were formed when the catalyst carrying 5 wt.%. Of Cu was calcined at $400^{\circ}C$. The Cu-Ce binding was confirmed by peak shifts in Raman analysis and also peaks appeared in $H_2-TPR$. In addition, the balance state analysis demonstrated that a lot of surface labile oxygen molecules are formed, which can be more easily contributed to the reaction with $Ce^{3+}$ species known to form a substitution bond easily. It was found that CO conversion rate of the catalyst used in this study was close to 100% at $150^{\circ}C$.

Study on the Thermal Degradation Behavior of FKM O-rings

  • Lee, Jin Hyok;Bae, Jong Woo;Choi, Myoung Chan;Yoon, Yoo-Mi;Park, Sung Han;Jo, Nam-Ju
    • Elastomers and Composites
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    • v.53 no.4
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    • pp.213-219
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    • 2018
  • The degradation mechanism and physical properties of an FKM O-ring were observed with thermal aging in this experiment. From X-ray photoelectron spectroscopy (XPS) analysis, we could observe carbon (285 eV), fluoro (688 eV), and oxygen (531 eV) peaks. Before thermal aging, the concentration of fluoro atoms was 51.23%, which decreased to 8.29% after thermal aging. The concentration of oxygen atoms increased from 3.16% to 20.39%. Under thermal aging, the FKM O-ring exhibited debonding of the fluoro-bond by oxidation. Analysis of the C1s, O1s, and F1s peaks revealed that the degradation reaction usually occurred at the C-F, C-F2, and C-F3 bonds, and generated a carboxyl group (-COOH) by oxidation. Due to the debonding reaction and decreasing mobility, the glass transition temperature of the FKM O-ring increased from $-15.91^{\circ}C$ to $-13.79^{\circ}C$. From the intermittent CSR test, the initial sealing force was 2,149.6 N, which decreased to 1,156.2 N after thermal aging. Thus, under thermal aging, the sealing force decreased to 46.2%, compared with its initial state. This phenomenon was caused by the debonding reaction and decreasing mobility of the FKM O-ring. The S-S curve exhibited a 50% increase in modulus, with break at a low strain and stress state. This was also attributed to the decreasing mobility due to thermal aging degradation.

Characterization of $SiO_xC_y$ films deposited by PECVD using BMDSO and Oxygen (HMDSO와 산소를 이용한 PECVD 증착 $SiO_xC_y$필름의 특성연구)

  • 김성룡;이호영
    • Journal of the Korean Vacuum Society
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    • v.10 no.2
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    • pp.182-188
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    • 2001
  • Thin films of $SiO_xC_y$ deposited by means of PECVD(plasma enhanced chemical vapor deposition) using HMDSO(hexamethyldisiloxane)/$O_2$ were characterized. The effects of deposition conditions such as RF power, oxygen flow rate and hydrogen flow rate on the chemical bond structure, atomic composition, surface roughness and wear characteristics of the films were investigated by means of FTIR, XPS, AFM and Hazemeter. The deposition rate of $SiO_xC_y$ was greater than 100 nm/min, which is relatively high rate. The XPS results showed that the carbon content in a deposited film was lower than that of previous studies where different organosilicone materials were used. The optimum wear resistance was attained when RF power was 200 Watt and oxygen flow rate was 100 sccm. This study implies that the $HMDSO/O_2$ system is effective in forming a film with a lower carbon content and good abrasion resistance.

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Electrical and Material Characteristics of HfO2 Film in HfO2/Hf/Si MOS Structure (HfO2/Hf/Si MOS 구조에서 나타나는 HfO2 박막의 물성 및 전기적 특성)

  • Bae, Kun-Ho;Do, Seung-Woo;Lee, Jae-Sung;Lee, Yong-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.2
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    • pp.101-106
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    • 2009
  • In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

Comparative evaluation of effects of different surface treatment methods on bond strength between fiber post and composite core

  • Mosharraf, Ramin;Yazdi, Najmeh Baghaei
    • The Journal of Advanced Prosthodontics
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    • v.4 no.2
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    • pp.103-108
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    • 2012
  • PURPOSE. Debonding of a composite resin core of the fiber post often occurs at the interface between these two materials. The aim of this study was to evaluate the effects of different surface treatment methods on bond strength between fiber posts and composite core. MATERIALS AND METHODS. Sixty-four fiber posts were picked in two groups (Hetco and Exacto). Each group was further divided into four subgroups using different surface treatments: 1) silanization; 2) sandblasting; 3) Treatment with 24% $H_2O_2$, and 4) no treatment (control group). A cylindrical plexiglass matrix was placed around the post and filled with the core resin composite. Specimens were stored in 5000 thermal cycles between $5^{\circ}C$ and $55^{\circ}C$. Tensile bond strength (TBS) test and evaluation using stereomicroscope were performed on the specimen and the data were analyzed using two-way ANOVA, Post Hoc Scheffe tests and Fisher's Exact Test (${\alpha}$=.05). RESULTS. There was a significant difference between the effect of different surface treatments on TBS ($P$ <.001) but different brands of post ($P$=.743) and interaction between the brand of post and surface treatment ($P$=.922) had no significant effect on TBS. Both silanization and sandblasting improved the bonding strength of fiber posts to composite resin core, but there were not any significant differences between these groups and control group. CONCLUSION. There was not any significant difference between two brands of fiber posts that had been used in this study. Although silanization and sandblasting can improve the TBS, there was not any significant differences between surface treatments used.

The Effects of Precursor on the Formation and Their Properties of Spin-on Dielectric Films Used for Sub-50 nm Technology and Beyond (50 nm 이상의 CMOS 기술에 이용되는 Spin-on Dielectric 박막 형성과 그 특성에 미치는 전구체의 영향)

  • Lee, Wan-Gyu
    • Journal of the Korean Vacuum Society
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    • v.20 no.3
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    • pp.182-188
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    • 2011
  • Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

Effect of Fluorides on Mullitization of $SiO_2-Al_2O_3$ System; Korean Kaolin (플루오르화물이 $SiO_2-Al_2O_3$계 원료의 물라이트화에 미치는 영향)

  • 최상욱;이철규
    • Journal of the Korean Ceramic Society
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    • v.17 no.2
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    • pp.61-68
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    • 1980
  • The effect of the addition of various fluoreides on the mullitization of Korean crude kaolin was studied by X-ray powder diffraction and scanning electron microscopic methods. Kaolin without any addition of fluoreides began to be transformed into the mullite at 1, 10$0^{\circ}C$. Mullite peaks were discernible in the X-ray diffraction patterns of the specimens which contained fluorides equivalent to about 2 wt % fluorine, and which were sintered at 1, 05$0^{\circ}C$. The higher the concentration of fluorine in kaolin, the lower was the initiatinig temperature of mullitization. Experiments , for example, showed that mullite could be formed at 95$0^{\circ}C$ from kaolin mixed with 3.4% fluorine. Of the fluoride, addtives, sodiumsiliconfluoride $(Na_2SiF_6)$ was must effective in mullite formation of kaolin. In order of accelerating mullitization, the fluorides except $Na_2SiF_6$ could be placed in following sequence ; (1) sodium (NaF) (2) aluminium$(AlF_3)$ (3)potassium(KF) (4) ammonium$(NH_4F)$ (5) magnesium$(MgF_2)$ (6) calcium$(CaF_2)$. It was considered that the intrinsic characteristics of fluorides, such as size of ionic radiu, charge , bond strength between cation and anion, and electronegativity of cation affected millitization of halloysite, a main constituent mineral of kaolin.

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Electrochemical Reduction on the -S-N= Bond of N-Tert-butylbenzothiazole-2-sulfenamide (N-Tert-butylbenzothiazole-2-sulfenamide의-S-N = 결합에 대한 전기화학적 환원)

  • Kim, Hae-Jin;Jung, Keun-Ho;Choi, Qw-Won;Kim, Il-Kwang;Leem, Sun-Young
    • Journal of the Korean Chemical Society
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    • v.35 no.6
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    • pp.673-679
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    • 1991
  • The electrochemical reduction of N-tert-butylbenzothiazole-2-sulfenamide (TBBS; vulcanization accelerator) was investigated by direct current, differential pulse polarography, cyclic voltammetry and controlled potential coulometry. The electrode reduction of TBBS proceeded E-C-E-C reaction mechanism by four electrons transfer at irreversible one wave (-2.31 volts vs. Ag/0.1M AgN$O_3$ in AN). As the results of controlled potential electrolysis, mercaptobenzothiazole (MBT), benzothiazole disulfide (MBT dimer) and extricated sulfur were products which followed by cleavage of the sulfenamide (-S-N=) bond. Upon the basis of products analysis and polarogram interpretation with pH variable, electrochemical reaction mechanism was suggested.

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