• 한국식품위생안전성학회지
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• 제5권3호
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• pp.159-164
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• 1990

To detect and quantitation residual antibiotics and antibacterial agents in meats, we performed a biological assay employing the three microorganisms Bacillus subtilis ATCC 6633, Micrococcus luteus ATCC 9341, and Bacillus cereus var. mycoides ATCC 11778 for the screening purpose and developed a Gas Chromatography-mass Spectrometry(GC/MS) analysis for the confirmation and quantiation. In the biological assay (paper disk method), three test solution are used depending on the character of the residual antibiotics and antibacterial agents, follow by a simple clean up procedure which includes homogenization with Mcilvaine buffer, defatting with includes homogenization with Mcilvaine buffer, defatting with hexane, extraction with chloroform, clean-up by Sep-Pak $C_{18}$ and Bakerbond SPE carboxylic acid column. The chloroform layer is used for the analysis of sulfa agents. macrolides antibiotics and antibacterial agents, Adsorbed materials in the Sep-Pak $C_{18}$ were also employed for th analysis of penicillins and tetracyclines. Effluents from the Sep-Pak $C_{18}$ were cleaned-up one more by Bakerbond 10 SPE COOH column and employed for the analysis of aminoglycosides. In the instrumental analysis by using the GC/MSD, residual antibiotics and antibacterial agent were quantitated by selected ion monitoring (SIM) mode after derivatization. A simultaneous analysis of six residual antibiotic and antibacterial agent such as oxytetracycline, penicillin, ampicillin, choliraphenicol and thiamphenicol was developed with simple cleanup procedures revealing good recovery and reproducibility. Also, simultaneous detection of macrolides antibiotics such as erythromycin, spiramycin, and oleandomycin was developed after acid hydrolysis due to their large molecular structures. Because of the high reproducibility and selectivity of these two methods, it is very desirable that the combination of the two methods be used in the bioassay for the screening of residual antibiotics and antibacterial agent and that GC/MSD analysis be used for the confirmation and quantitation.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.73-77
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• 2000

Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750$^{\circ}C$. Also, ASR analysis revealed that the carrier concentration was about 50 times as that of phosphine. In order to evaluate the electrical characteristics of doped polycrystalline Si films for semiconductor devices, MOS capacitors were fabricated to measure capacitance of polycrystalline Si films. In ${\pm}$2 V measuring condition, Si films, doped with solid source, have 8% higher $C_{min}$ than that of unadditional doped Si films and 3% higher $C_{min}$ than that of Si films doped with $PH_3$ source. The leakage current of these films was a few fA/${\mu}m^2$. As a result, a 2-zone diffusion method is suggested as an effective method to achieve highly doped polycrystalline Si films even at low temperature.

• 한국재료학회지
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• 제9권11호
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• pp.1117-1122
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• 1999

5~10nm 두께의 얇은 산화막 위에 $\alpha$-실리콘과 Co/Ti 이중막을 순차적으로 증착하고 급속열처리하여 코발트 폴리사이드 전극을 만든 후, SADS법으로 다결정 Si을 도핑하여 MOS 커패시터를 제작하였다. 이때 drive-in 열처리조건에 따른 커패시터의 C-V 특성과 누설전류를 측정하여, $\textrm{CoSi}_{2}$의 열적안정성과 도판트 (B 및 As)의 재분포가 Co-폴리사이드 게이트의 전기적 특성에 미치는 영향을 연구하였다.$ 700^{\circ}C$에서 60~80초간 열처리시, 다결정 Si층의 도핑으로 우수한 C-V 특성과 낮은 누설전류를 나타냈으나, 그 이상 장시간 또는 $900^{\circ}C$의 고온에서는 $\textrm{CoSi}_{2}$의 분해에 따른 Co의 확산으로 전기적 특성이 저하되었다. SADS법으로 Co-폴리사이드 게이트 전극을 형성할 때, 도판트가 다결정 Si층으로 충분히 확산되는 것뿐만 아니라, $\textrm{CoSi}_{2}$의 분해를 억제하는 것이 매우 중요하다.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.921-926
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• 2011

This study investigates a root cause of the improved rate performance of $LiFePO_4$ after metal doping to Fesites. This is because the metal doped $LiFePO_4$/C maintains its initial capacity at higher C-rates than undoped one. Using $LiFePO_4$/C and doped $LiFe_{0.97}M_{0.03}PO_4$/C (M=$Al^{3+}$, $Cr^{3+}$, $Zr^{4+}$), which are synthesized by a mechanochemical process followed by one-step heat treatment, the Li content before and after chemical delithiation in the $LiFePO_4$/C and the binding energy are compared using atomic absorption spectroscopy (AAS) and X-ray photoelectron spectroscopy (XPS). The results from AAS and XPS indicate that the low Li content of the metal doped $LiFePO_4$/C after chemical delithiation is attributed to the low binding energy induced by weak Li-O interactions. The improved capacity retention of the doped $LiFePO_4$/C at high discharge rates is, therefore, achieved by relatively low binding energy between Li and O ions, which leads to fast Li diffusivity.

• 전기전자학회논문지
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• 제27권4호
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• pp.630-635
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• 2023

SiC는 고온, 고전압을 비롯한 악조건에서의 내성이 기존 산업분야의 대다수를 점유하고 있는 Silicon에 비해 우수하여 전력반도체 분야에서 Silicon의 위치를 대체하여 가고 있다. 본 논문은 전력 반도체 소자 중 하나인 4H-SiC Planar MOSFET에 알루미늄으로 Gate를 형성하여 다결정 Si 게이트와 대비, 파라미터 값들이 일관성을 갖도록 하였으며, SiC MOSFET의 채널 도핑 농도에 변화를 주어 문턱전압과 항복전압, IV 특성을 연구하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.35-36
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

• 공업화학
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• 제18권5호
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• pp.483-489
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• 2007

Polyaniline (PANI)/Polyimide (PI) 혼합막을 제조하여 PANI 함량과 doping처리가 막의 구조적 특성과 기체 분리 특성에 미치는 영향을 연구하였다. NMP를 용매로 하여 6FDA와 ODA를 반응시켜 얻어진 polyamic acid (PAA) 용액과 PANI 용액을 혼합하여 PANI/PI 혼합막을 얻었다. 얻어진 PANI/PI 막을 1M의 HCl 수용액에서 24시간 doping처리하여 doped PANI/PI 혼합막을 제조하였다. 제조한 막은 FT-IR과 XRD 및 TGA에 의하여 구조적 특성을 분석하였고, $30^{\circ}C$와 5 atm에서 압력변화법으로 $H_2$, $O_2$, $CO_2$, $N_2$ 및 $CH_4$에 대한 기체 투과 특성을 조사하였다. PANI/PI 혼합막은 PANI와 PI의 흡수특성을 잘 보여주었고 PANI보다 열적 안정성이 향상되었으며, PANI의 함량이 증가할수록 d-spacing은 감소하였다. PANI/PI 혼합막에서 기체의 투과도계수는 PANI의 함량이 증가함에 따라 감소하였으며 투과도 계수의 크기는 $H_2$ > $O_2$ > $CO_2$ > $N_2$ > $CH_4$의 순서였다. PANI/PI막을 doping처리하면 투과도계수는 감소하나 투과선택도는 향상되었다. 특히 doping한 PANI/PI (75/25)막에서 $H_2/CH_4$의 선택도는 991을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1805-1808
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• 2006

In this paper, we describe a versatile use of fullerene(C60) as a charge transporting material for organic light-emitting diodes. The use of fullerene as a buffer layer for an anode, a doping material for hole transport layer, and an electron transport layer was investigated. Fullerene improved the hole injection from an anode to a hole transport layer by lowering the interfacial energy barrier and enhanced the lifetime of the device as a doping material for a hole transport layer. In addition, it was also effective as an electron transporting material to get low driving voltage in the device.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1131-1134
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• 2003

A low temperature doping technique has been studied for application in poly-Si TFT's on plastic substrates. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of $120^{\circ}C$, and a sheet resistance as low as $300 {\Omega}/sq$. was obtained.

• 전자공학회논문지D
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• 제35D권7호
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• pp.56-62
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• 1998

Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.