Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.04b
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- Pages.35-36
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- 2009
A simulation study on the structural optimization of a 800V 4H-SiC Power DMOSFET
800V급 4H-SiC DMOSFET 전력 소자 구조 최적화 시뮬레이션
- Choi, Chang-Yong (Kwangwoon Univ.) ;
- Gang, Min-Seok (Kwangwoon Univ.) ;
- Bang, Wook (Korea Electrotechnology Research Institute (KERI)) ;
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Kim, Sang-Chul
(Korea Electrotechnology Research Institute (KERI)) ;
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Kim, Nam-Kyun
(Korea Electrotechnology Research Institute (KERI)) ;
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Koo, Sang-Mo
(Kwangwoon Univ.)
- Published : 2009.04.03
Abstract
In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage (