• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1582-1585
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• 2009

The effects of bias stress on spin-coated zinc tin oxide (ZTO) transistors are investigated. Applying a positive bias stress results in the displacement of the transfer curves in the positive direction without changing the field effect mobility or the subthreshold behavior. Device instability appears to be a consequence of the charging and discharging of temporal trap states at the interface and in the zinc tin oxide channel region.

• Journal of Positioning, Navigation, and Timing
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• 제1권1호
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• pp.51-57
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• 2012

In this paper, design of an error model is presented in which the bias characteristic of the MEMS IMU is taken into consideration for performance enhancement of the MEMS IMU-based GPS/INS integrated navigation system. The drift bias of the MEMS IMU is modeled as a 1st-order Gauss-Markov (GM) process, and the autocorrelation function is obtained from the collected IMU data, and the correlation time is estimated from this. Prior to obtaining the autocorrelation function, the noise of IMU data is eliminated based on wavelet. As a result of simulation, it is represented that the parameters of error model can be estimated correctly only when a proper denoising is performed according to dynamic behavior of drift bias, and that the integrated navigation system based on error model, in which the drift bias is considered, provides more correct navigation performance compared to the integrated navigation system based on error model in which the drift bias is not considered.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.136-139
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• 2003

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film as working gas at 30W rf bias condition. A high pretilt angle of about $5^{\circ}$ by ion beam(IB) exposure on the a-C:H thin film surface was measured. A good LC alignment by the IB alignment method on the a-C:H thin film surface was observed at annealing temperature of $250^{\circ}C$, and the alignment defect of the NLC was observed above annealing temperature of $300^{\circ}C$. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C:H thin film surface as working gas at 30W rf bias condition can be achieved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.231.2-231.2
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• 2014

훌륭한 전기적 특성을 갖는 ZnO 기반의 산화물 반도체 박막트랜지스터(TFT)는 AMOLEDs에 적용될 수 있다. 하지만 이러한 장점에도 불구하고 산화물 반도체 TFT소자에 전압이 인가되었을 때 문턱 전압이 이동하게 되는 안정성 문제를 갖는다. 따라서 이를 해결하기 위한 연구가 널리 진행 되고 있다. 본 연구소에서는 고압 분위기 열처리를 통해 안정성의 원인으로 작용할 수 있는 산소공공(Oxygen vacancy)을 감소시키는 연구를 진행하였다. 산화물 반도체 TFT소자의 안정성을 향상시키는 대표적인 분위기 열처리로는 산소 고압 열처리(HPA)가 있으며, 또한 H2O 기체를 사용한 열처리를 통해 TFT소자의 안정성을 높일 수 있다는 연구 결과가 보고된 바 있다. 본 연구에서는 IGZO TFT소자에 H2O보다 더 큰 반응성을 갖는 산화제인 H2O2 기체를 사용한 HPA를 통해 positive bias stress(PBS) 및 negative bias illumination stress(NBIS) 조건에서 안정성이 향상됨을 확인하였고 이를 H2O 기체를 사용한 경우와 비교하였다. 그 결과 H2O2 기체를 산화제로 사용할 때 기존 H2O 기체에 비해 효과적인 PBS 및 NBIS 신뢰성 개선을 확인하였다.

• 자연과학논문집
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• 제8권1호
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• pp.5-15
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• 1995

IRR 적응 휠터의 공식오차 방식은 지역 최소값에 관계없이 전역 최소값에 수렴하며 안정성이 높다. 그러나 공식오차 방식은 입력 신호에 잡음이 섞여 경우 예측계수가 바이어스 되는 문제가 있다. 본 논문에서는 사전에 잡음에 대한 지식이 없이 바이어스가 없는 예측계수를 얻을 수 있는 새로운 공식 오차 방식을 위한 알고리즘을 제안한다. 이 알고리즘은 공식오차를 스므딩하는 방식을 이용하여 입력에 추가되는 잡음이 백색잡음인 경우 바이어스 없이 계수를 예측할 수 있다. 시뮬레이션을 통해 새로운 알고리즘이 공식오차의 중요한 장점인 빠른 수렴속도와 안정성을 유지하며 바이어스를 효율적으로 제거함을 볼 수 있다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.154-154
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• 2013

In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 추계학술대회 논문집
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• pp.388-392
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• 2004

Due to the lack of stiffness and difficulties of control, it is hard to achieve well balanced magnetic levitation. In this paper, we analysis the current and position stiffness change according to bias current through experiment. Then, compensation equations were presented. After obtaining PD gain for each bias current and PD gain region through levitation experiment, we consider the characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.711-714
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• 2006

Properties of silicon nitride ($SiN_x$) film including physical and electrical characteristics have been studied for improving the stability of hydrogenated amorphous silicon thin-film transistors (a-Si TFTs) in active-matrix liquid-crystal displays (AMLCDs). The instability of a-Si:H TFTs is estimated by accelerated stress test of both bias-temperature stress and bias-illumination stress. The results show that the deposition conditions of $SiN_x$ films with higher power and lower pressure are the best choice for improving the on-current and stability of TFTs.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2002년도 ICCAS
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• pp.39.4-39
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• 2002

This paper presents a design and implementation of a PID feedback control loop for micro gyroscope. The feedback control loop improves the gyroscope performance such as linearity, bandwidth, and bias stability for micro gyroscope which is basically a high-Q system and exhibits a low performance with an open loop control. The designed and implemented feed-back control loop is applied to the SNU-Bosch MEMS gyroscope to demonstrate the improvement with the feedback control loop. The bandwidth is improved to 60Hz from 25Hz of open loop control. The linearity becomes 0.5% from 1%. The bias stability is improved to 0.03 deg/sec from 0.06 deg/sec.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.15-16
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• 2000

The gate bias stress effect of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with a $SiN_x/BCB$ gate insulator have been studied. The gate planarization was carried out by spin-coating of BCB (benzocyclobutene) on Cr gates. The BCB exhibits charge trappings during a high gate bias, but the stability of the TFT is the same as conventional one when it is between -25 V and +25 V. The charge trap density in the BCB increases with its thickness.