한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Investigation of Bias Stress Stability of Solution Processed Oxide Thin Film Transistors

  • Jeong, Young-Min (Dept. of Materials Science and Engineering, Yonsei University) ;
  • Song, Keun-Kyu (Dept. of Materials Science and Engineering, Yonsei University) ;
  • Kim, Dong-Jo (Dept. of Materials Science and Engineering, Yonsei University) ;
  • Koo, Chang-Young (Dept. of Materials Science and Engineering, Yonsei University) ;
  • Moon, Joo-Ho (Dept. of Materials Science and Engineering, Yonsei University)
  • Published : 2009.10.12
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Abstract

The effects of bias stress on spin-coated zinc tin oxide (ZTO) transistors are investigated. Applying a positive bias stress results in the displacement of the transfer curves in the positive direction without changing the field effect mobility or the subthreshold behavior. Device instability appears to be a consequence of the charging and discharging of temporal trap states at the interface and in the zinc tin oxide channel region.

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