• Title/Summary/Keyword: Bi-phase

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The Study of improving the UWB data rates using Bi-Phase modulation (Bi-Phase와 펄스 위치 혼합 변조를 이용한 UWB 전송율 개선)

  • 서신흥;고영은;방성일
    • Proceedings of the IEEK Conference
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    • 2003.07a
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    • pp.553-556
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    • 2003
  • In this paper was studied the improvements and increasements of the data transmission rate in UWB (Ultra wideband) systems. so Considered that previous UWB systems of code structure and proposed the New constructure that was synthesized the PPM and Bi-Phase Modulation structure, may increase the data transmission rate of multiple channel structure using Time-slots. This proposed structure was modeled suitable at Home Networking conditions and was simulated. and so measure the performance of coding construction, and compare that New synthesized structure with early structure. so we can verify the superiority of New experiment.

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Sticking Characteristics in Bi2Sr2CanCun+1Ox Thin Films Fabricated by using the Evaporation Method to Improve the Sticking Ratio (부착율 개선을 위해 증발 법으로 제작한 Bi2Sr2CanCun+1Ox 박막의 부착 특성)

  • 천민우;박용필
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.11
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    • pp.1029-1034
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    • 2003
  • The Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$, superconducting thin films arc fabricated by using the sputtering and evaporation method. Because we confirmed the sticking ratio of Bi element in the Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$ superconducting thin film fabricated by using the sputtering method was much lower than the expected value, to get the enough number of the flakes of Bi, faraday cup was used to evaporate Bi clement. As a result of the fabrication, Bi 2201 and Bi 2212 single phases could be made by the optima of deposition condition. And we confirmed the sticking coefficient of Bi element was clearly related to the temperature change of the substrate and the generation of Bi22l2 phase

Structural Modulation in the 2212 Phase of Bi-Sr-Ca-Cu-O Superconductors (Bi계 산화물 초전도체 2212상에서의 구조변조)

  • 신재수;권태송;윤상원;이창희;노기용
    • Journal of the Korean Ceramic Society
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    • v.38 no.4
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    • pp.360-364
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    • 2001
  • 고상반응법(solid-state reaction)으로 산화물 초전도체 Bi$_{2+x}$ Sr$_{1.8}$ $CaCu_2$$O_{8+\delta}$(-0.2$\leq$x$\leq$0.2)을 제조하여 조성변화에 따른 산소량과 Bi 이온의 하전가(valence)가 구조변조의 주기에 미치는 영향을 조사하였다. 2212상의 단일상 고용한계는 -0.1$\leq$x$\leq$0.1 영역이었다. 이 영역에서 x의 증가에 따라 격자상수 c는 감소를 보이며, 온셋 임계온도 Tc$^{on}$ 과 산소량은 증가하는 경향을 보였다. 또한, Bi 이온의 하전기와 구조변조의 주기는 단일상 고용한계 영역 내에서 x의 증가에 따라 감소하는 경향을 보이고 있다. 구조변조의 주기는 산소량이 증가함에 따라 감소하고 Bi 이온의 하전가 증가에 따라 증가함을 보였다. 즉, 산소의 절대량과 Bi 이온의 하전가에 따라 구조변조의 주기가 변화하는 것을 알 수 있었다.

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Fabrication of Bi-based High-Tc superconducting thin films by 4-target RF magnetron sputtering methods (4원타깃 RF마그네트론 스퍼터링법을 이용한 Bi계 고온 초전도체 박막의 제작)

  • 이현수;강형곤;임성훈;한병성
    • Electrical & Electronic Materials
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    • v.10 no.9
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    • pp.869-875
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    • 1997
  • Bi based superconducting thin films were fabricated by 4-target RF magnetron sputtering using the method of controlling the on-off time. These thin films showed better crystal structures. The ratio of Cu/Bi decreased but the critical temperature increased with increasing the temperature of the substrate. High temperature phase low temperature of the substrate. High temperature phase low temperature phase and semiconducting phase can be formed by controlling the on-off time of the shutter respectively.

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Controlling the secondary phase of BSCCO 2223 tapes by thermal slide heat treatment(TSHT)

  • Park, Sung-Chang;Yoo, Jai-Moo;Ko, Jae-Woong;Kim, Young-Kuk;Kim, Cheol-Jin
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.1
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    • pp.40-43
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    • 2003
  • The phase transformation, variation of secondary phase, and critical current density $(J_c) for (Bi,Pb)_2Sr_2Ca_2Cu_3O_10 (2223)$ tapes have been studied through the thermal slide heat treatment (TSHT) process. This process consists of a multiple variations of oxygen partial pressures and temperatures at the initial heat treatment During the initial heat treatment some secondary phase such as $(Ca,Sr)_2CuO_3(2/1 AEC), (Ca,Sr)_{14}Cu_{24}O_{41} (14/24 AEC), and (Bi,Pb)_2Sr_2CuO_y$(2201, amorphous phase) farm in Bi-2223 tapes, especially at the 2223 grain boundaries. These secondary phases are detrimental to the phase transformation and final properties. In order to control the secondary phase in Bi-2223 tapes the amount and size of secondary phases among the TSHT process were observed. The results indicate that the amount and particle size of AEC particles were smaller when the TSHT process was used than when the normal process at the initial heat treatment was used which results in the improved $J_c$ properties after the final process.

Parallel Operation of Three-Phase Bi-Directional Isolated Interleaved DC-DC Converters for The Battery Charge/Discharge System (배터리 충·방전기 시스템에 적용되는 3상 양방향 절연형 인터리브드 DC-DC 컨버터의 병렬운전)

  • Jo, Hyunsik;Lee, Jaedo;Cha, Hanju
    • The Transactions of the Korean Institute of Power Electronics
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    • v.19 no.1
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    • pp.15-22
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    • 2014
  • Recently, parallel operation of dc-dc converters has been widely used in distributed power systems. In this paper, a control method to achieve parallel operation of three-phase bi-directional isolated interleaved dc-dc converters is discussed for the battery charging and discharging system which consists of the 32 battery charger/dischargers and two three-phase bi-directional isolated interleaved dc-dc converters. In the boost mode, the battery energy is delivered to the grid, whereas the grid energy is transferred to the battery in the buck mode operation. The average current sharing control method is employed to obtain an equal conducting of each phase current in the three-phase dc-dc converter. By using the proposed method, the imbalance factor is gratefully reduced from 8 percent to 1 percent. Two 2.5kW three-phase bi-directional dc-dc converter prototype have been built and the proposed method has been verified through experiments.

Effect of Doping Elements on Superconducting Characteristics in Bi-system Ceramics (Bi계 세라믹에서 초전도체 특성에 미치는 도우핑 원소의 영향)

  • 양승호;박용필;김용주
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.198-203
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    • 2000
  • This paper investigated the effects of doping elements on the Bi-Sr-Ca-Cu-O ceramics. The doping elements can be classified into four groups depending on their superconducting characteristics in the Bi-Sr-Ca-Cu-O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase. The third group of doping elements(P and K) have a tendency to decompose the superconducting phase and reduce the optimal sintering temperature. The fourth group of doping elements(B, Si, Sn and Ba) almost unaffected the superconductivity of the 2223 and 2212 phase.

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Influence of Doping Elements on the. Formation of Superconducting Phase in the Bi-Sr-Ca-Cu-O System (Bi-Sr-Ca-Cu-O 계에 서 초전도상 형성에 미치는 도우핑 원소의 영향)

  • 양승호;정지인;박용필
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.217-220
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    • 1999
  • We investigated the effects of doping elements on the Bi-Sr-Ca-Cu-0 ceramics. The doping elements can be classified into groups depending on their supeconducting characteristics in the Bi -Sr-Ca-Cu -O structure. The first group of doping elements(Co, Fe, Ni and Zn) substitute into the copper site and can reduce the critical temperatures of the 2223 and 2212 phases. The second group of doping elements(Y and La) substitute into the Ca site and cause the disappearance of the 2223 phase and increase the critical temperatures in the 2212 phase.

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Effects of Sb-Incorporation on the 2223 Phase in the Superconducting Bi-Pb-Sr-Ca-Cu-O System

  • Seong Han Kim;Dong Hoon Lee;Jong Sik Park;Seung Koo Cho;Sung Han Lee;Keu Hong Kim
    • Bulletin of the Korean Chemical Society
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    • v.15 no.2
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    • pp.115-118
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    • 1994
  • Samples of ($Bi_{2-x}Sb_x)PbSr_2Ca_2Cu_3O_y$, compositions with x=0.0, 0.1, and 0.2 were prepared by solid-state reaction. The solubility of Sb into the 2223 phase is lower than 0.05 for the ratio of Sb/Bi. The lack of stability of the Sb-substituted $Bi_2O_2$ double layers is likely to cause the solubility low. There is no great dependence of lattice parameters on the Sb-content, and bonds around the square-pyramidal Cu atom are not affected by the $Sb^{3+}$ ion substituted. The superconducting transition temperature of this system is decreased gradually with increase of Sb, which is tentatively attributable to the perturbation of the Bi 6p-O 2p band and/or to the low volume fraction of the 2223 phase.

Evaluating Properties for Bi-layer PZT thin film Fabricated by RF-Magnetron Sputtering System (RF-마그네트론 스퍼터링법으로 제작한 이층형 PZT의 특성평가)

  • Lim, Sil-Mook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.8
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    • pp.222-227
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    • 2020
  • Pb(Zr,Ti)O3(denoted as PZT) in the perovskite phase is used as a dielectric, piezoelectric, and super appetizer material owing to its ferroelectric properties. A PZT film was formed by an RF magnetron sputtering process by preparing a target composed of Pb1.3(Zr0.52Ti0.48)O3. The PZT film was formed by dividing the material into a mono-layer PZT produced continuously with the same sputtering power and a bi-layer PZT produced with two-stage sputtering power. The bi-layer PZT consisted of a lower layer produced under low-power sputtering conditions and an upper layer produced under the same conditions as the mono-layer PZT. XRD revealed small amounts of pyrochlore phase in the mono-layer PZT, but only the perovskite phase was detected in the bi-layer PZT. SEM and AFM revealed the upper part of the bi-layer PZT to be more compact and smooth. Moreover, the bi-layered PZT showed superior symmetry polarization and a significantly reduced leakage current of less than 1×10-5 A/cm2. This phenomenon observed in bi-layer PZT was attributed to the induction of growth into a pure perovskite phase by suppressing the formation of a pyrochlore phase in the upper PZT layer where the densely formed lower PZT layer was produced sequentially.