• Analytical Science and Technology
• /
• v.30 no.2
• /
• pp.75-81
• /
• 2017

5-methylthioninhydrin (5-MTN) is an amino acid sensitive reagent used for the development of latent fingermarks deposited on porous surfaces such as paper and wood. The present study demonstrates that the 5-MTN can be used as a latent footwear impression enhancement reagent, by reacting with trace multivalent metal ions, which are the main components of the latent footwear impression. 5-MTN and L-alanine complex (MTN-ALA) used for the latent footwear impression development was prepared, by mixing $4.5{\times}10^{-3}M$ 5-MTN (in methanol) and $4.5{\times}10^{-3}M$ L-alanine (in methanol) in 1:1 ratio, and keeping undisturbed at room temperature for 24 h. The latent footwear impressions were deposited on white and black non-porous surfaces (glass plate, polyethylene panel, polypropylene panel, acryl panel, polyvinyl chloride (PVC) panel, poly(methyl methacrylate) (PMMA) panel, acrylonitrile-butadiene-styrene (ABS) panel, tile), and a semi-porous surfaces (painted wood). The latent footwear impressions on these surfaces were treated with MTN-ALA complex by spraying. The fluorescence of footwear impressions (occurred due to the reaction between MTN-ALA and metal complexes) was observed under a 505 nm forensic light source and an orange barrier filter. The enhancement of latent footwear impression was achieved from black surfaces without any blurring. However, the fluorescence (enhancement) of footwear impression was not observed on the white PVC, PMMA, and ABS surfaces, because the incident light interfered and reflected on the surface. The sensitivity of MTN-ALA was superior to 2,2'-dipyridil, which is a representative non-fluorescing footwear impression enhancement reagent, and similar to 8-hydroxyquinoline, which is a representative fluorescing footwear impression enhancement reagent.

• Journal of Electrical Engineering and Technology
• /
• v.5 no.4
• /
• pp.640-645
• /
• 2010

This paper describes the power generating property of hydrothermally grown ZnO nanorods on a flexible polyethersulfone (PES) substrate. The piezoelectric currents generated by the ZnO nanorods were measured when bending the ZnO nanorod by using I-AFM, and the measured piezoelectric currents ranged from 60 to 100 pA. When the PtIr coated tip bends a ZnO nanorod, piezoelectrical asymmetric potential is created on the nanorod surface. The Schottky barrier at the ZnO-metal interface accumulates elecntrons and then release very quickly generating the currents when the tip moves from tensile to compressed part of ZnO nanorod. These ZnO nanorods were grown almost vertically with the length of 300-500 nm and the diameter of 30-60 nm on the Ag/Ti/PES substrate at $90^{\circ}C$ for 6 hours by hydrothermal method. The metal-semiconductor interface property was evaluated by using a HP 4145B Semiconductor Parameter Analyzer and the piezoelectric effect of the ZnO nanorods were evaluated by using an I-AFM. From the measured I-V characteristics, it was observed that ZnO-Ag and ZnO-Au metal-semiconductor interfaces showed an ohmic and a Schottky contact characteristics, respectively. ANSYS finite element simulation was performed in order to understand the power generation mechanism of the ZnO nanorods under applied external stress theoretically.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.53-53
• /
• 2011

As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

• Electrical & Electronic Materials
• /
• v.8 no.5
• /
• pp.619-625
• /
• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• Korean Journal of Metals and Materials
• /
• v.49 no.7
• /
• pp.549-556
• /
• 2011

This study aimed to evaluate the performance of diffusion barriers in order to prevent fuel-cladding chemical interaction (FCCI) between the metallic fuels and the cladding materials, a potential hazard for nuclear fuel in sodium-cooled fast reactors. In order to prevent FCCI, Zr or V metal is deposited on the ferritic-martensitic stainless steel surface by physical vapor deposition with a thickness up to $5{\mu}m$. The diffusion couple tests using uranium alloy (U-10Zr) and a rare earth metal such as Ce-La alloy and Nd were performed at temperatures between 660~800$^{\circ}C$. Microstructural analysis using SEM was carried out over the coupled specimen. The results show that significant interdiffusion and an associated eutectic reaction ocurred in the specimen without a diffusion barrier. However, with the exception of the local dissolution of the Zr layer in the Ce-La alloy, the specimens deposited with Zr and V exhibited superior eutectic resistance to the uranium alloy and rare earth metal.

• Progress in Superconductivity and Cryogenics
• /
• v.9 no.3
• /
• pp.5-8
• /
• 2007

All three buffer layers of $Y_2O_3$, YSZ, and $CeO_2$ have been deposited on the biaxially textured metal substrates using rf-sputtering method, The first 50-70nm thick $Y_2O_3$ films were grown epitaxially on biaxially textured metal substrates as a seed layer and followed by the diffusion barrier ${\sim}100nm$ thick YSZ and subsequent capping layer ${\sim}200nm$ thick $CeO_2$ deposited epitaxially on top of $Y_2O_3$ seed layer. The epitaxial orientation of all three layers were all (100) grown with rocking curve Full Width at Half Maximum(FWHM) of $4-5^{\circ}$ and in plane phi-scan FWHM of $6-8^{\circ}$ using X -ray diffraction analysis. The NiO phases formed during the $Y_2O_3$ seed layer deposition seem to degrade the crystallinity and roughen the surface morphology of the following layer observed by AFM(Atomic Force Microscopy). The buffered tapes were used as substrates for long length YBCO coated conductors with high critical current density $J_c$. The five multi-turn of metal tapes was employed to increase the thickness of films and production rate to compensate the low growth rate of rf-sputtering method.

• Journal of dental hygiene science
• /
• v.9 no.4
• /
• pp.405-412
• /
• 2009

The purpose of this study investigated the effect of Au coating on adhesion between porcelain matrix and metal substructure interface. Titanium, Ni-Cr alloy and Co-Cr alloy are well known as proper metal for the dental restorations. The success of a porcelain fused to metal (PFM) restoration depends upon the quality of the porcelain-metal bond. However, adhesion between dental alloys and porcelain is related to diffusion of oxygen during ceramic firing. The excessive oxidized layers make hard adhesion between dental alloy and ceramic. Ni-Cr and Co-Cr specimens were divided into test and a control group and Titanium specimens were divided into three test groups and a control group. Each group had 20 specimens. The adhesion characteristics of porcelain and metal with Au coating layer and without Au coating layer were observed with scanning electron microscopy(SEM). The adhesion was evaluated by a biaxial flexure test and volume fraction of adherent porcelain was determined by SEM/EDS analysis. Result of this study suggest that Au coating layer is effective barrier to diffuse oxide layer completely protect non-precious alloys from oxidation during the porcelain firing. The SEM photomicrographs of cross-section specimens showed a smooth interface between Au coating layer and metals and porcelain which suggested proper chemical bonding, and no gap, porosity were observed. The mode of failure was mainly adhesive for Ti tested specimens, but mixed failures with adhesive and cohesive were observed in Ni-Cr and Co-Cr specimens. The adhesion between non-precious metals and porcelain would not be improved by Au coating agent. However, It is suggested that the continuous study is required further investigation and development.

• Corrosion Science and Technology
• /
• v.4 no.6
• /
• pp.222-225
• /
• 2005

The adhesion strength of metal plating on PC was studied. In this study, surface was treated by chemical agents or DBD(dielectric barrier discharge) plasma to imporve the adhesion. The surface roughness, contact angle, gloss of plating and adhesive strength were measured. Adhesion strengths of Ni plating on prepared PC by NaOH and KOH solution were $12.3kgf/cm^2$ and $7.5kgf/cm^2$, respectively. The highest adhesion strength was obtained in the plasma treated one, $27.8kgf/cm^2$.

• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.9-11
• /
• 2001

차세대 고속 DRAM기술에 사용될 금속인 Cu의 확산 방지막(diffusion harrier) 물질로는 Ta 또는 W 같은 Refractory metal 이 융점(melting point)이 높고 저항값이 낮아 많이 연구 보고되고 있으나, 본 논문에서는 초고주파 소자에서 Au의 확산 방지 막으로 많이 사용되고 있으며. 선택적 증착이 용이한 Pt과 Ni를 MOS 소자의 Cu 확산 방지 막으로 적용하며 어닐링한 후 소자의 게이트 산화막 누설전류($I_{leak}$), 그리고. Si/$SiO_2$ 계면의 trap density 등의 변이를 측정하여 Cu가 소자의 특성 열화에 미치는 영향을 연구하였다. 실험 결과 Pt/Ti($200{\AA}/100{\AA}$)를 적용한 경우 소자 측성 열화가 가장 적었으며. 이는 Copper의 확산 방지막으로 Pt/Ti를 사용하여 전기적 특성 및 계면 특성을 개선시킬 수 있음을 보여 주었다. 이는 SIMS Profile을 통해서도 확인하였다.

• Korean Journal of Materials Research
• /
• v.13 no.1
• /
• pp.11-17
• /
• 2003

DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.