Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 8 Issue 5
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- Pages.619-625
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Effects of lead metal and annealing methods on low resistance contact formation of polycrystalline CdTe thin film
다결정 CdTe박막의 저저항 접축을 위한 배선금속 및 열처리방법의 효과에 관한 연구
Abstract
Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H
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