• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.114.1-114
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• 2003

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.61-61
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• 2004

• Journal of ILASS-Korea
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• v.21 no.2
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• pp.111-115
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• 2016

This paper experimentally reports the effect of suspension stability on the thermal conductivity of water-based Au nanofluids. For this purpose, the water-based Au nanofluids are prepared by the one-step method called electro-chemical method with volume fraction of 0.0005%. The thermal conductivity of water-based Au nanofluids is measured from $22^{\circ}C$ to $42^{\circ}C$ using the transient hot wire method. To quantify the suspension stability of Au nanofluids, the suspension stability of nanofluids is evaluated using the in-house developed laser scattering system at a fixed wavelength of 632.8nm with the elapsed time. Based on the experimental results, the both thermal conductivity and suspension stability of water-based Au nanofluids are gradually decreased according to the time. These results experimentally show that the suspension stability of water-based Au nanofluids is the one of the important factor of thermal conductivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.735-738
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• 2000

The characteristics of wire electrical discharge machining (WEDM) are governed by many factors such as the power supply type, operating condition and electrode material. This work deals with the effect of wire electrode materials on the machining characteristics such as, metal removal rate, surface characteristics and surface roughness during WEDM A wire's thermal physical properties are melting point, electrical conductivity and vapor pressure. One of the desired qualities of wire is a low melting point and high vapor pressure to help expel the contaminants from the gap. They are determined by the mix of alloying elements (in the case of plain brass and coated wire) or the base core material(i.e. molybdenum). Experiments have been conducted regarding the choice of suitable wire electrode materials and influence of the properties of these materials on the machinability and surface characteristics in WEDM, the experimental results are presented and discussed from their metallurgical aspect. And the coating effect of various alloying elements(Au, Ag, Cu, Zn, Cr, Mn, etc.) to the Cu or 65-35 brass core on them was reviewed also. The removal rate of some coated wires are higher than that of 65-35 brass electrode wire because the wire is difficult to break due to the wire cooling effect of Zn evaporation latent heat and the Zn oxide on the surface is effective in preventing short circuit. The removal rate increases with increasing Zn content from 35, 40 and Zn coated wire

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.175-175
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• 1999

Circumventing problems lying in the conventional lithographic techniques, we devised a new method for the fabrication of nanometer scale metal wires inspired by the unique characteristics of carbon nanotubes (CNTs). Since carbon nanotubes could act as masks when CNT-coated thin Au/Ti layer on a SiO2 surface was physically etched by low energy argon ion bombardment 9ion milling), Au/Ti nano-wires were successfully formed just below the CNTs exactly duplicating their lateral shapes. Cross-sectional analysis by transmission electron microscopy revealed that the edge of the metal wire was very sharply developed indicating the great difference in the milling rates between the CNTs and the metal layer as well as the good directionality of the ion milling. We could easily find a few nanometer-wide Au/Ti wires among the wires of various width. After the formation of nano-wires, the CNTs could be pushed away from the metal nano-wire by atomic force microscopy, The lateral force for the removal of the CNTs are dependent upon the width and shape of the wires. Resistance of the metal nano-wires without the CNTs was also measured through the micro-contacts definted by electron beam lithography. since this CNT-based lithographic technique is, in principle, applicable to any kinds of materials, it can be very useful in exploring the fields of nano-science and technology, especially when it is combines with the CNT manipulation techniques.

• Proceedings of the KWS Conference
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• v.43
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• pp.46-48
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• 2004

• Journal of the Korean Society of Radiology
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• v.8 no.7
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• pp.371-376
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• 2014

The process of flip-chip bump bonding, Au wire bonding and encapsulation were sucessfully developed and modularized. The CdTe sensor and ROIC were optimally jointed together at $150^{\circ}C$ and $270^{\circ}C$ respectively under24.5 N for 30s. To make SnAg bump on ROIC easy to be bonded, the higher bonding temperature was established than CdTe sensor's. In addition, the bonding pressure was lowered minimally because CdTe Sensor is easier to break than Si Sensor. CdTe multi-energy sensor module observed were no electrical failures in the joints using developed flip chip bump bonding and Au wire bonding process. As a result of measurement, shearing force was $2.45kgf/mm^2$ and, it is enough bonding force against threshold force, $2kgf/mm^2s$.

• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.138-143
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• 1999

Recently, miniaturization of large scale integrated circuits (LSI) and printed circuit board (PCB) have become essential with the downsizing of electronic devices. Gold electroplating is applied of conductivity wiring or terminals for improvement of conductivity and corrosion resistance. However, electroplating is not applicable since the circuits are becoming finer and denser. Accordingly, electroless plating is recently highly attractive method because of the simplicity of the operation requiring no external source of current and no elaborate equipment. In this work, we tried to develop a plating technique on electroless Ni/Au plating. First, the electroless Ni plating was deposited on the PCB with agitation in the bath at $85^{\circ}C$. Then the Au layer was deposited on the Ni layer surface by same method at $90^{\circ}C$. The bonderability were tested in order to evaluate the stability of the electroless Ni/Au by gold wire or solder ball test.

• Journal of Magnetics
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• v.14 no.2
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• pp.53-61
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• 2009

Herein, different concepts for domain wall propagation based on currents and fields that could potentially be used in magnetic data storage devices based on domains and domain walls are reviewed. By direct imaging, we show that vortex and transverse walls can be displaced using currents due to the spin transfer torque effect. For the case of field-induced wall motion, particular attention is paid to the influence of localized fields and local heating on the depinning and propagation of domain walls. Using an Au nanowire adjacent to a permalloy structure with a domain wall, the depinning field of the wall, when current pulses are injected into the Au nanowire, was studied. The current pulse drastically modified the depinning field, which depended on the interplay between the externally applied field direction and polarity of the current, leading subsequently to an Oersted field and heating of the permalloy at the interface with the Au wire. Placing the domain wall at various distances from the Au wire and studying different wall propagation directions, the range of Joule heating and Oersted field was determined; both effects could be separated. Approaches beyond conventional field- and current-induced wall displacement are briefly discussed.