• Environmental Engineering Research
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• 제25권2호
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• pp.238-242
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• 2020

Sediment microbial fuel cells (SMFCs) illustrated great potential for powering environmental sensors and bioremediation of sediments. In the present study, array anodes for SMFCs were fabricated with graphite rods as anode material and stainless steel plate as electric current collector to make it inconvenient to in situ settle down and not feasible for large-scale application. The results demonstrated that maximum power of 89.4 ㎼ was obtained from three graphite rods, twice of 43.3 ㎼ for two graphite rods. Electrochemical impedance spectroscopy revealed that three graphite rods resulted in anodic resistance of 61.2 Ω, relative to 76.0 Ω of two graphite rods. It was probably caused by the parallel connection of the graphite rods, as well as more biomass which could reduce the charge transfer resistance of the biofilm anode. The presently designed array configuration possesses the advantages of easy to enlarge the surface area, decrease in anodic resistance because of the parallel connection of each graphite rod, and convenience to berry into sediment by gravity. Therefore, the as prepared array node would be an effective method to fabricate large-scale SMFC and make it easy to in situ applicate in natural sediments.

• Nuclear Engineering and Technology
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• 제52권4호
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• pp.835-840
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• 2020

A position-sensitive CsI(Tl) crystal array coupled with the multi-anode position sensitive photomultiplier tube (PS-PMT), Hamamatsu H8500C, has been developed at the Institute of Modern Physics. An effective, fast, and economical readout circuit based on discretized positioning circuit (DPC) bridge was designed for the 64-channel multi-anode flat panel PSPMT. The horizontal and vertical position resolutions are 0.58 mm and 0.63 mm respectively for the 1.0 × 1.0 × 5.0 ㎣ CsI(Tl) array, and the horizontal and vertical position resolutions are 0.86 mm and 0.80 mm respectively for the 2.0 × 2.0 × 10.0 ㎣ CsI(Tl) array. These results show that the CsI(Tl) crystal array with low cost could be applied in the fields of medical imaging and high-resolution gamma camera.

• 전자공학회논문지 IE
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• 제44권3호
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• pp.1-5
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• 2007

Si 팁 기술의 장점을 살리면서 팁을 실리사이드화하여 팁표면의 열화학적 내구성을 증가시키고 전계방출 전류밀도를 금속 팁에 가깝게 끌어올릴 수 있는 새로운 3극관 형태의 전계방출 팁 구조를 제작하였다. 제작된 소자의 전계방출 특성을 $10^{-8}Torr$의 초고진공 상태에서 캐소드-애노드 간격을 $100{\mu}m$로 하여 측정한 결과, turn-on 전압이 약 40V로, 방출전류가 인가 전압 150V에서 약 $69{\mu}A$로 나타났다.

• Journal of Electrochemical Science and Technology
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• 제7권1호
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• pp.76-81
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• 2016

An anatase TiO₂ nanotube array (NTA) was fabricated by anodization and successive heat treatments. When the anatase TiO₂ NTA was cathodically polarized, its color changed to blue, and it could be used as an electrochemically active anode for an oxygen evolution reaction (OER) in alkaline water electrolysis. The structure of the blue anatase TiO₂ NTA was controlled by the anodization conditions and its catalytic activity increased with an increase of the surface area. The activity of the blue anatase TiO₂ NTA gradually reduced with the continued OER because of the partial oxidation of Ti³⁺ to Ti⁴⁺. However, an intermittent cathodic regeneration process could significantly slow its reduction rate. The blue anatase TiO₂ NTA could be an alternative anode for alkaline water electrolysis.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1530-1533
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• 2005

We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing $SiO_2$ on the glass substrate. Wet etching is easer and simpler than depositing and etching of thick gate oxide to isolate the gate metal from cathode electrode in triode. Field emission characteristic s of triode structure were measured. The maximum current density of 92.5 ${\mu}A/cm^2$ was when the gate and anode voltage was 95 and 2500 V, respectively at the anode-cathode spacing of 1500 ${\mu}m$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.635-639
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• 2000

In this paper, a new idea about ultra-clean aligning and mounting method of FED spacers was introduced. The glass-to -glass electrostatic bonding process was employed in order to bond the micro-structures of spacers to black matrix area formed on an FED anode substrate. It is possible to get adhesive-free bonding interface and well-aligned spacer array on an FED anode substrate with a ${\pm}5{\mu}m$ accuracy. Finally, I inch-sized FED panel was demonstrated to make sure of its applicability to FED panel fabrication.

• Journal of Radiation Protection and Research
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• 제45권1호
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• pp.35-44
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• 2020

Background: Cadmium zinc telluride (CZT) is a promising material because of a high detection efficiency, good energy resolution, and operability at room temperature. However, the cost of CZT dramatically increases as its size increases. In this study, to achieve a large effective volume with relatively low cost, an array structure comprised of individual virtual Frisch-grid CZT detectors was proposed. Materials and Methods: The prototype consisted of 2 × 2 CZTs, a holder, anode and cathode printed circuit boards (PCBs), and an application-specific integrated circuit (ASIC). CZTs were used and the non-contacting shielding electrode method was applied for virtual Frisch-grid effect. An ASIC was used, and the holder and the PCBs were fabricated. In the current system, because the CZTs formed a common cathode, a total of 5 channels were assigned for data processing. Results and Discussion: An experiment using ¹³⁷Cs at room temperature was conducted for 10 minutes. Energy and timing information was acquired and the depth of interaction was calculated by the timing difference between the signals of both electrodes. Based on obtained three-dimensional position information, the energy correction was carried out, and as a result the energy spectra showed the improvements. In addition, a Compton image was reconstructed using the iterative method. Conclusion: The virtual Frisch-grid CZT detector based on the array structure was developed and the energy spectra and the Compton image were successfully acquired.

• 한국진공학회지
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• 제6권2호
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• pp.103-108
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• 1997

본 연구에서는 2단계 실리콘 건식식각 공정과 게이트 절연막으로 열산화막과 tetraethylorthosilicate(TEOS) 산화막의 이중막을 사용하고, 스핀-온-그래스 (Spin-on-glass:SOG) 에치백(etch-back) 공정에 의하여 게이트를 제작하는 새로운 방법을 통하여 실리콘 전계방출소자를 제작하고 그 특성을 분석하였다. 게이트 절연막의 누설전류 를 감소시키면서 팁과 게이트의 간격을 줄이는 구조인 이중 게이트 절연막을 형성하기 위하 여 팁 첨예화 산화 공정후 낮은 점도의 감광막(photo resist)을 시료에 도포한 후, $O_2$ 플라 즈마 에싱(ashing)하는 공정을 채택하였다. 이러한 공정으로 제작된 에미터 팁의 높이와 팁 반경은 각각 1.1$\mu\textrm{m}$와 100$\AA$정도이었으며, 256개 팁 어레이에서 전계방출의 문턱전압은 40V 이하이었다. 60V의 게이트전압에서 23$\mu\textrm{A}$(즉, 90nA/팁)의 높은 아노드 전류를 얻을 수 있었 다. 이때, 게이트 전류는 아노드전류의 약0.1%이하였다. 개발된 공정기술로 게이트 개구도 크게 감소시켰을 뿐 아니라, 게이트 누설전류를 현저히 감소시켰다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.311-311
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• 2009

Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

• ETRI Journal
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• 제24권4호
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.