• Title/Summary/Keyword: Array anode

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Electric power generation from sediment microbial fuel cells with graphite rod array anode

  • Wang, Zejie;Lim, Bongsu
    • Environmental Engineering Research
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    • v.25 no.2
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    • pp.238-242
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    • 2020
  • Sediment microbial fuel cells (SMFCs) illustrated great potential for powering environmental sensors and bioremediation of sediments. In the present study, array anodes for SMFCs were fabricated with graphite rods as anode material and stainless steel plate as electric current collector to make it inconvenient to in situ settle down and not feasible for large-scale application. The results demonstrated that maximum power of 89.4 ㎼ was obtained from three graphite rods, twice of 43.3 ㎼ for two graphite rods. Electrochemical impedance spectroscopy revealed that three graphite rods resulted in anodic resistance of 61.2 Ω, relative to 76.0 Ω of two graphite rods. It was probably caused by the parallel connection of the graphite rods, as well as more biomass which could reduce the charge transfer resistance of the biofilm anode. The presently designed array configuration possesses the advantages of easy to enlarge the surface area, decrease in anodic resistance because of the parallel connection of each graphite rod, and convenience to berry into sediment by gravity. Therefore, the as prepared array node would be an effective method to fabricate large-scale SMFC and make it easy to in situ applicate in natural sediments.

Development of a position sensitive CsI(Tl) crystal array

  • Shi, Guo-Zhu;Chen, Ruo-Fu;Chen, Kun;Shen, Ai-Hua;Zhang, Xiu-Ling;Chen, Jin-Da;Du, Cheng-Ming;Hu, Zheng-Guo;Fan, Guang-Wei
    • Nuclear Engineering and Technology
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    • v.52 no.4
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    • pp.835-840
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    • 2020
  • A position-sensitive CsI(Tl) crystal array coupled with the multi-anode position sensitive photomultiplier tube (PS-PMT), Hamamatsu H8500C, has been developed at the Institute of Modern Physics. An effective, fast, and economical readout circuit based on discretized positioning circuit (DPC) bridge was designed for the 64-channel multi-anode flat panel PSPMT. The horizontal and vertical position resolutions are 0.58 mm and 0.63 mm respectively for the 1.0 × 1.0 × 5.0 ㎣ CsI(Tl) array, and the horizontal and vertical position resolutions are 0.86 mm and 0.80 mm respectively for the 2.0 × 2.0 × 10.0 ㎣ CsI(Tl) array. These results show that the CsI(Tl) crystal array with low cost could be applied in the fields of medical imaging and high-resolution gamma camera.

Fabrication of triode type Ti-silicided field emission tip array (3극 티타늄 실리사이드 전계방출 팁 어레이의 제작)

  • Ohm, Woo-Yong
    • 전자공학회논문지 IE
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    • v.44 no.3
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    • pp.1-5
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    • 2007
  • A new field emission tip array was realized by Ti silicidation of Ti coated Si tip, which has long term durability, chemical stability, and high emission current density. The fabricated Ti silicided FE tip array under high vacuum condition of about $10^{-8}Torr$ shows that the turn-on voltage is about 40V and the emission current is about $69{\mu}A$ when the bias of 150V is applied between anode and cathode of $100{\mu}m$ distance.

Electrochemical Activity of a Blue Anatase TiO2 Nanotube Array for the Oxygen Evolution Reaction in Alkaline Water Electrolysis

  • Han, Junhyeok;Choi, Hyejin;Lee, Gibaek;Tak, Yongsug;Yoon, Jeyong
    • Journal of Electrochemical Science and Technology
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    • v.7 no.1
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    • pp.76-81
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    • 2016
  • An anatase TiO2 nanotube array (NTA) was fabricated by anodization and successive heat treatments. When the anatase TiO2 NTA was cathodically polarized, its color changed to blue, and it could be used as an electrochemically active anode for an oxygen evolution reaction (OER) in alkaline water electrolysis. The structure of the blue anatase TiO2 NTA was controlled by the anodization conditions and its catalytic activity increased with an increase of the surface area. The activity of the blue anatase TiO2 NTA gradually reduced with the continued OER because of the partial oxidation of Ti3+ to Ti4+. However, an intermittent cathodic regeneration process could significantly slow its reduction rate. The blue anatase TiO2 NTA could be an alternative anode for alkaline water electrolysis.

Fabrication and Properties of Under Gate Field Emitter Array for Back Light Unit in LCD

  • Jung, Yong-Jun;Park, Jae-Hong;Jeong, Jin-Soo;Nam, Joong-Woo;Berdinsky, Alexander S.;Yoo, Ji-Beom;Park, Chong-Yun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1530-1533
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    • 2005
  • We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing $SiO_2$ on the glass substrate. Wet etching is easer and simpler than depositing and etching of thick gate oxide to isolate the gate metal from cathode electrode in triode. Field emission characteristic s of triode structure were measured. The maximum current density of 92.5 ${\mu}A/cm^2$ was when the gate and anode voltage was 95 and 2500 V, respectively at the anode-cathode spacing of 1500 ${\mu}m$.

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Development of Ultra-Clean Aligning/Mounting Process of FED Spacers using Electrostatic Bonding (정전 열 접합을 이용한 FED 스페이서의 초청정 정렬/탑재 공정 개발)

  • Ju, Byeong-Kwon;Kang, Moon-Sik;Lee, Yun-Hi
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.11
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    • pp.635-639
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    • 2000
  • In this paper, a new idea about ultra-clean aligning and mounting method of FED spacers was introduced. The glass-to -glass electrostatic bonding process was employed in order to bond the micro-structures of spacers to black matrix area formed on an FED anode substrate. It is possible to get adhesive-free bonding interface and well-aligned spacer array on an FED anode substrate with a ${\pm}5{\mu}m$ accuracy. Finally, I inch-sized FED panel was demonstrated to make sure of its applicability to FED panel fabrication.

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Development of a Virtual Frisch-Grid CZT Detector Based on the Array Structure

  • Kim, Younghak;Lee, Wonho
    • Journal of Radiation Protection and Research
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    • v.45 no.1
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    • pp.35-44
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    • 2020
  • Background: Cadmium zinc telluride (CZT) is a promising material because of a high detection efficiency, good energy resolution, and operability at room temperature. However, the cost of CZT dramatically increases as its size increases. In this study, to achieve a large effective volume with relatively low cost, an array structure comprised of individual virtual Frisch-grid CZT detectors was proposed. Materials and Methods: The prototype consisted of 2 × 2 CZTs, a holder, anode and cathode printed circuit boards (PCBs), and an application-specific integrated circuit (ASIC). CZTs were used and the non-contacting shielding electrode method was applied for virtual Frisch-grid effect. An ASIC was used, and the holder and the PCBs were fabricated. In the current system, because the CZTs formed a common cathode, a total of 5 channels were assigned for data processing. Results and Discussion: An experiment using 137Cs at room temperature was conducted for 10 minutes. Energy and timing information was acquired and the depth of interaction was calculated by the timing difference between the signals of both electrodes. Based on obtained three-dimensional position information, the energy correction was carried out, and as a result the energy spectra showed the improvements. In addition, a Compton image was reconstructed using the iterative method. Conclusion: The virtual Frisch-grid CZT detector based on the array structure was developed and the energy spectra and the Compton image were successfully acquired.

Fabrication and characterization of silicon field emitter array with double gate dielectric (이중 게이트 절연막을 가지는 실리콘 전계방출 어레이 제작 및 특성)

  • 이진호;강성원;송윤호;박종문;조경의;이상윤;유형준
    • Journal of the Korean Vacuum Society
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    • v.6 no.2
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    • pp.103-108
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    • 1997
  • Silicon field emitter arrays (FEAs) have been fabricated by a novel method employing a two-step tip etch and a spin-on-glass (SOG) etch-back process using double layered thermal/tetraethylortho-silicate (TEOS) oxides as a gate dielectric. A partial etching was performed by coating a low viscous photo resist and $O_2$ plasma ashing on order to form the double layered gate dielectric. A small gate aperture with low gate leakage current was obtained by the novel process. The hight and the end radius of the fabricated emitter was about 1.1 $\mu\textrm{m}$ and less than 100$\AA$, respectively. The anode emission current from a 256 tips array was turned-on at a gate voltage of 40 V. Also, the gate current was less than 0.1% of the anode current.

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Fabrication of Field Emitter Arrays by Transferring Filtered Carbon Nanotubes onto Conducting Substrates

  • Jang, Eun-Soo;Goak, Jung-Choon;Lee, Han-Sung;Lee, Seung-Ho;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.311-311
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    • 2009
  • Carbon nanotubes (CNTs) belong to an ideal material for field emitters because of their superior electrical, mechanical, and chemical properties together with unique geometric features. Several applications of CNTs to field emitters have been demonstrated in electron emission devices such as field emission display (FED), backlight unit (BLU), X-ray source, etc. In this study, we fabricated a CNT cathode by using filtration processes. First, an aqueous CNT solution was prepared by ultrasonically dispersing purified single-walled CNTs (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). The aqueous CNT solution in a milliliter or even several tens of micro-litters was filtered by an alumina membrane through the vacuum filtration, and an ultra-thin CNT film was formed onto the alumina membrane. Thereafter, the alumina membrane was solvated by acetone, and the floating CNT film was easily transferred to indium-tin-oxide (ITO) glass substrate in an area defined as 1 cm with a film mask. The CNT film was subjected to an activation process with an adhesive roller, erecting the CNTs up to serve as electron emitters. In order to measure their luminance characteristics, an ITO-coated glass substrate having phosphor was employed as an anode plate. Our field emitter array (FEA) was fairly transparent unlike conventional FEAs, which enabled light to emit not only through the anode frontside but also through the cathode backside, where luminace on the cathode backside was higher than that on the anode frontside. Futhermore, we added a reflecting metal layer to cathode or anode side to enhance the luminance of light passing through the other side. In one case, the metal layer was formed onto the bottom face of the cathode substrate and reflected the light back so that light passed only through the anode substrate. In the other case, the reflecting layer coated on the anode substrate made all light go only through the cathode substrate. Among the two cases, the latter showed higher luminance than the former. This study will discuss the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the either side.

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Active-Matrix Field Emission Display with Amorphous Silicon Thin-Film Transistors and Mo-Tip Field Emitter Arrays

  • Song, Yoon-Ho;Hwang, Chi-Sun;Cho, Young-Rae;Kim, Bong-Chul;Ahn, Seong-Deok;Chung, Choong-Heui;Kim, Do-Hyung;Uhm, Hyun-Seok;Lee, Jin-Ho;Cho, Kyoung-Ik
    • ETRI Journal
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    • v.24 no.4
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    • pp.290-298
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    • 2002
  • We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

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