• 열처리공학회지
• /
• 제29권4호
• /
• pp.163-167
• /
• 2016

$SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then vacuum annealed for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. The thickness of films kept at 100 nm by controlling the deposition rate. While the optical transmittance and electrical resistivity of as deposited $SnO_2$ films were 82.6% in the visible wavelength region and $1.9{\times}10^{-3}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 84.5% and the electrical resistivity also decreased as low as $8.5{\times}10^{-4}{\Omega}cm$. From the observed results, it is concluded that post-deposition vacuum annealing at $200^{\circ}C$ is an attractive condition to optimize the opto-elecrtical properties of $SnO_2$ thin films for the opto-electrical applications.

• 한국진공학회지
• /
• 제11권1호
• /
• pp.43-49
• /
• 2002

N형 InGaAs에 대한 Pd/Ge/Pd/Ti/Au 오믹 접촉의 급속 열처리 조건에 따른 오믹 특성을 조사하였다. $450^{\circ}C$까지의 열처리에 의해 우수한 오믹 특성을 나타내어 $400^{\circ}C$/10초의 급속 열처리 후에 최저 $1.1\times10^{-6}\Omega\textrm{cm}^2$의 접촉 비저항을 나타내었다. $425^{\circ}C$ 이상의 열처리 후에 접촉 비저항이 점점 증가하여 $450^{\circ}C$에서는 오믹 재료와 InGaAs의 반응에 의해 오믹 특성의 열화가 나타났다. 그러나 high-$10^{-6}\Omega\textrm{cm}^2$ 정도의 비교적 우수한 오믹 특성을 유지하였고, 양호한 표면 및 계면이 얻어져 화합물 반도체 소자에의 응용 가능성이 충분한 것으로 판단된다.

• 전자공학회논문지C
• /
• 제36C권11호
• /
• pp.46-54
• /
• 1999

셀룰러 신경망 셀의 출력값은 각 셀의 초기 상태값에 따라서 국부적 최소점으로 안정화될 수 있으므로 출력값에 오류를 가져을 수 있다. 이에 본 논문에서는 각 셀의 초기 상태값에 관계없이 출력값이 전역적 최소점 도달하여 정확한 출력이 보장되도록 하는 어닐링 기능을 갖는 6×6 셀룰러 신경망을 설계하였다. 이 칩은 0.8㎛ CMOS 공정으로 설계하였다. 설계된 칩은 약 15,000여개의 트랜지스터로 구성되며 칩 면적은 약 2.89×2.89㎟이다. 설계된 회로를 이용한 윤곽선 추출 및 hole filling에 대한 시뮬레이션 결과에서 어닐링이 되지 않은 경우에서 출력값에 오류를 일으킬 수 있지만 어닐링 기능을 갖는 경우에는 오류가 발생하지 않는 것을 확인하였다. 시뮬레이션에서 어닐링 시간은 3μsec로 하였다.

• 한국세라믹학회지
• /
• 제33권10호
• /
• pp.1101-1108
• /
• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.232-233
• /
• 2008

The 4H-SiC schottky diodes treated by the various dry etch methods were fabricated and electrically characterized. The post etch process including an Inductively Coupled Plasma(ICP) etch and a Neutron Beam Etch(NBE) was performed after a high-temperature activation annealing without graphite cap in order to eliminate the damaged surface generated during the activation annealing. The reverse leakage current of diode treated by ICP was 1/35 times lower than that of the diode without any post etch at the anode bias of -100V, while the reverse leakage current of diode treated by NBE was 1/44 times lower at the same bias.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.417-418
• /
• 2008

Transparent conductive oxide (TCO) are necessary as front electrode or anti-reflecting coating for increasing efficiency of LED and Photodiode. In this paper, aluminum-doped Zinc oxide films(AZO) were prepared by DC magnetron sputtering on glass(corning 1737) and Si substrate at temperature of $100^{\circ}C$ and then annealed at temperature of $400^{\circ}C$ for 1hr in Ar and vaccum. The AZO films were etched in diluted HCL (0.5 %) to examine the surface morphology properties. After annealing, Structural and electrical property were investigated. The c-axis orientation along (002) plane was enhanced and the electrical resistivity of the AZO film decreased from $1.1\times10^{-1}$ to $1.6\times10^{-2}{\Omega}cm$. We observed textured structure of AZO thin film etched for 2s.

• Restorative Dentistry and Endodontics
• /
• 제4권1호
• /
• pp.7-9
• /
• 1978

Brass specimen, copper based alloy was prepared in cubic form about $1cm{\times}1cm{\times}1cm$ in volume. The specimens were mechanically compressed in one direction until the dimension distorted to 20%, 40%, 60% and 80% in length. The compressed specimens with 80% distorted in length were then heat treated in $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$ for 30 minutes. Microscopic examination was made on both compressed and heat treated specimens. The results obtained from the study were as follows: 1. Grain boundary and twin phenomenon was clearly seen in 0% and 20% compressed cases. Slip bands was appeared in 40% cases and distributed equally as well as twin. 2. The first evidence of slip bands was observed in 20% and the bands grew thicker and denser as the compression increased. 3. The density of the bands were reduced after annealing in $200^{\circ}C$ and completely disappeared at $300^{\circ}C$ cases. 4. Recrystallization was noticed unevenly in $300^{\circ}C$ cases and the evidence of twin was observed in these crystallized area. 5. In $400^{\circ}C$ cases the grain boundary was evenly found and the twin phenomenon was clearly observed. Grain boundary and twin was noticeably formed in size according to the annealing temperature increased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.261-262
• /
• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO(GZO) films. GZO target have been deposited on corning 7059 glass substrates by DC sputtering. GZO films were annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. Experimental resulted in as-grown film shows the resistivity of $6{\times}10^{-1}\;{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}\;{\Omega}{\cdot}cm$ and 90%, respectively.

• 열처리공학회지
• /
• 제30권1호
• /
• pp.1-5
• /
• 2017

A 100 nm thick $SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then annealed in nitrogen atmosphere for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. While the visible light transmittance and electrical resistivity of as deposited $SnO_2$ films were 81.8% and $1.5{\times}10^{-2}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 82.8% and the electrical resistivity also decreased as low as $4.3{\times}10^{-3}{\Omega}cm$. From the observed results, it is concluded that post-deposition annealing in nitrogen atmosphere at $200^{\circ}C$ is an attractive condition to optimize the optical and electrical properties of $SnO_2$ thin films for the various display device applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1995년도 추계학술대회 논문집
• /
• pp.261-264
• /
• 1995

The response speed enhancement in picosecond photoconductor made from RF planar magnetron sputtered hydrogenated amorphous germanium thin film is discussed. Pulsed laser annealing technique was used to fabricate the highly conductive ohmic contacts and to remove the shallow deflects in the deposited photoconductive film using the different laser powers. Measured V-I curve showed -5 times bigger conductance in photoconductive gap than the one used by the conventional vacuum annealing method using strip heater.