• Journal of Korean Society of Industrial and Systems Engineering
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• v.29 no.2
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• pp.43-50
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• 2006

본 연구에서는 철강 제조 공정에서 발생하는 생산 계획 문제를 설명하고 해결 방법을 제시한다. 철강 제품 중에서도 판재류(냉연, 아연도, 석도, 칼라 제품)를 생산하는 공정으로 연구 범위를 제한하고 적용하는 부분은 철강 공정의 스케줄링 분야를 배제한 생산 계획 분야만을 대상으로 한다. 특히, 철강 제조 공정의 생산 계획 문제들 중에서 가장 중요하게 고려되는 원료 충당 문제, 용량 할당 문제, Batched Annealing Furnace(BAF) 설비 운영 문제를 중심으로 설명하고, 이 문제점들을 해결하기 위한 방안을 제시한다. 또한, 제시된 방법을 특정의 툴에 적용하여 생산 계획 시스템을 구축하고 효과를 설명한다.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.211-220
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• 2014

In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.37 no.2
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• pp.96-101
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• 1988

This work is concerned with the fabrication process and photo-response characteristics of Cd S/(p) Si solar cells. In order to fabricate the cell. low grade Si wafer has been used as an absorber and Cd S which works as a window material has been prepared by vacuum evaporation. Cd S thin film, as evaporated, is polycristal and resistance is very high but these properties are improved by annealing. The properties of the fabricated cells are found to depend largely on the transmittance of Cd S. The effects of Cd S thickness and annealing condition on the fill factor and efficiency of the cell are investigated quantitatively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.12
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• pp.2505-2510
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• 2009

The SiOC films were deposited with the variation of flow rate ratios by chemical vapor deposition. It was researched the reason of decreasing the dielectric constant in SiOC film and the relationship between the dielectric constant and the thickness. The thickness of the deposited films tends to in proportion to the refractive index and the sample with the lowest dielectric constant decreased the thickness. The refractive index was decreased after annealing because of the decreasing of the film's thickness by annealing process.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.439-443
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• 1987

$PbTiO_3$ thin film is prepared by rf sputtering method to implement the pyroelectric infrared detector at room temperature. Annealing of $PbTiO_3$ thin film is done from $400^{\circ}C$ to $550^{\circ}C$ each for 2 hours in furnace. The spectral response to recrystallization process of $PbTiO_3$ thin film is measured by IR photospectro meter. Pyroelectric detector Modeling is studied for implementing device using electrical equivalent circuit model. It is found that $PbTiO_3$ thin film has two IR absorption band within $1000-400\;cm^{-1}$ (10um-25um) and it's spectral response is improved as annealing temperature increase. As a result of pyroelectric detector modeling, we find the possibility of implementing optimum device structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.81-85
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• 1990

$WSi_{x}$ film deposited on p+ polysilicon by low pressure chemical vapor deposition method were annealed by rapid thermal process, their properties have been investigated by measurements of electrical resistivity and Hall voltage and by analyses of phases and microstructure using X-ray diffraction and SEM technique. The electrical resistivity of the polycides consisting of the tungsten silicide and the p+ polysilicon decreases with the increase in annealing temperature due probably to the increase in grain size. unlike the polycides consisting of the $WSi_{x}$ and n+ polysilicon, however, the Hall voltage of the polycides consisting of $WSi_{x}$ and p+ polysilicon were positive for all specimens annealed as well as the as-deposited one, indicating the majority carrier in $WSi_{x}$. is hole and is independent of the annealing.

• International Journal of Automotive Technology
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• v.8 no.5
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• pp.599-603
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• 2007

An efficient optimum design process has been developed and applied to systematically design a lock-up clutch system for a torque converter used in an automatic transmission. A simulated annealing algorithm was applied to determine the parameters of the compressive helical damper springs in the clutch. The determination of the number, location, a number of turns, and deflection of damper springs plays an important role in reducing vibration and noise in the lock-up system. Next, FE-based shape optimization was coded to find the shape of the clutch disk that would satisfy the strength, noise and vibration requirements. Using the optimum code, parametric studies were performed to see how spring diameters and frequencies of clutch systems changed as the damper spring traveling angles and the torques were varied. Based on the optimum results, five different designs for clutches with different springs were fabricated and vibration analyses and tests were conducted to validate the accuracy of the proposed method. Results from the two methods show a good correlation.

• Transactions of the Society of Information Storage Systems
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• v.6 no.2
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• pp.68-73
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• 2010

The interest in acquiring high efficiency solar cells has been steadily increasing due to various advantages such as low-cost installation, pollution free and everlasting energy generation. In order to raise the cell efficiency, there has been a lot of effort to develop effective anti-reflection coatings. In this work, the main objective was to investigate the effects of particle size and annealing temperature of silica anti-reflection coatings to maximize the cell efficiency as well as reliability. It was shown that the light transmittance could be increased by a few percent over a certain range of wavelength using the silica coating. Also, the tribological properties of the coating could be improved through the annealing process, which led to better reliability of the coating.

• Journal of Surface Science and Engineering
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• v.26 no.3
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• pp.127-134
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• 1993

P+ and BF2+ were implanted to LPCVD amorphous silicon films deposited on thermally-oxidized silicon wafers and the low temperature annealing process followed with various conditions to activate implanted ions and to recrystallize the films. We tried to find the optimum processing condition by comparing the recrystallization behaviors and the electrical properties. TEM analysis showed that the final grain size of BF2+-implanted films was similar to that of unimplanted films, whereas the grains of P+-implanted films. For both P+ - and BF2+ -implanted films, sheet resistances were decreased with elevating annealing temperature and the minimum value was about 110~120$\Omega$/$\square$ at $600^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.289-300
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• 2002

In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.