Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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Optical and Structural Properties of Emerging Dilute III-V Bismides

  • Santos, B.H. Bononi Dos (Departamento de Fisica, Universidade Federal de Sao Carlos (UFSCAR)) ;
  • Gobatoa, Y. Galvao (Departamento de Fisica, Universidade Federal de Sao Carlos (UFSCAR)) ;
  • Heninib, M. (School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham)
  • Received : 2014.09.15
  • Accepted : 2014.09.19
  • Published : 2014.09.30
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Abstract

In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.

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References

  1. M. Henini, J. Ibanez, M. Schmidbauer, M. Shafi, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, M. F. Chisholm, and J. Misiewicz, Appl. Phys. Lett. 91, 251909 (2007). https://doi.org/10.1063/1.2827181
  2. B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, and T. Tiedje, Phys. Rev. Lett. 97, 067205 (2006). https://doi.org/10.1103/PhysRevLett.97.067205
  3. S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk, and T. Tiedje, Appl. Phys. Lett. 82, 3874 (2003). https://doi.org/10.1063/1.1581983
  4. K. Oe, Jpn. J. Appl. Phys. 41, 2801 (2002). https://doi.org/10.1143/JJAP.41.2801
  5. R. Kudrawiec, P. Poloczek, J. Misiewicz, M. Shafi, J. Ibanez, R. H. Mari, M. Henini, M. Schmidbauer, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, and M. F. Chisholm, Microelectronics Journal 40, 537 (2009). https://doi.org/10.1016/j.mejo.2008.06.025
  6. J. F. Rodrigo, D. L. Sales, M. Shafi, M. Henini, L. Turyanska, S. Novikov, and S. I. Molina, Applied Surface Science 256, 5688 (2010). https://doi.org/10.1016/j.apsusc.2010.03.017
  7. R. Kudrawiec, M. Syperek, P. Poloczek, J. Misiewicz, R. H. Mari, M. Shafi, M. Henini, Y. Galvao Gobato, S. V. Novikov, J. Ibanez, M. Schmidbauer, and S. I. Molina, J. Appl. Phys. 106, 023518 (2009). https://doi.org/10.1063/1.3168429
  8. O. M. Lemine, A. Alkaoud, H. V. Avanco Galeti, V. Orsi Gordo, Y. Galvao Gobato, Houcine Bouzid, A. Hajry, and M. Henini, Superlattices and Microstructures 65, 48 (2014). https://doi.org/10.1016/j.spmi.2013.10.002
  9. A. R. H. Carvalho, V. Orsi Gordo, H. V. A. Galeti, Y. Galvao Gobato, M. P. F. de Godoy, R. Kudrawiec, O. M. Lemine, and M. Henini, J. Phys. D: Appl. Phys. 47, 075103 (2014). https://doi.org/10.1088/0022-3727/47/7/075103
  10. A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, Appl. Phys. Lett. 101, 012106 (2012). https://doi.org/10.1063/1.4731784
  11. A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney, and J. P. R. David, Appl. Phys. Lett. 99, 042107 (2011). https://doi.org/10.1063/1.3617461
  12. A. J. Ptak, France R., D. A. Beaton, K. Alberi, J. Simon, A. Mascarenhas, and C. S. J. Jiang, Cryst. Growth 338, 107 (2012). https://doi.org/10.1016/j.jcrysgro.2011.10.040
  13. S. J. Sweeney and S. R. Jin, J. Appl. Phys. 113, 043110 (2013). https://doi.org/10.1063/1.4789624
  14. B. Pursley, M. Luengo-Kovac, G. Vardar, R. S. Goldman, and V. Sih, Appl. Phys. Lett. 102, 022420 (2013). https://doi.org/10.1063/1.4781415
  15. S. Mazzucato et al, Appl. Phys. Lett. 102, 252107 (2013). https://doi.org/10.1063/1.4812660
  16. S. Mazzucato et al, Semicond. Sci. Technol. 28, 022001 (2013). https://doi.org/10.1088/0268-1242/28/2/022001
  17. H. Tong, X. Marie, and M. W. Wu, J. Appl. Phys. 112, 063701 (2012). https://doi.org/10.1063/1.4752424
  18. G. Ciatto, E. C. Young, F. Glas, J. Chen, R. Alonso Mori and T. Tiedje, Phys. Rev. B 78, 035325 (2008). https://doi.org/10.1103/PhysRevB.78.035325
  19. G. Ciatto, M. Thomasset, F. Glas, X. Lu, and T. Tiedje, Phys. Rev. B 82, 201304 (2010). https://doi.org/10.1103/PhysRevB.82.201304
  20. D. L. Sales et al, Appl. Phys. Lett. 98, 101902 (2011). https://doi.org/10.1063/1.3562376