The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)
- Volume 37 Issue 2
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- Pages.96-101
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- 1988
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- 0254-4172(pISSN)
A Study on the Cd S/(p) Si heterojunction Solar Cell
CdS/(P)Si 이종접합 태양전지에 관한연구
Abstract
This work is concerned with the fabrication process and photo-response characteristics of Cd S/(p) Si solar cells. In order to fabricate the cell. low grade Si wafer has been used as an absorber and Cd S which works as a window material has been prepared by vacuum evaporation. Cd S thin film, as evaporated, is polycristal and resistance is very high but these properties are improved by annealing. The properties of the fabricated cells are found to depend largely on the transmittance of Cd S. The effects of Cd S thickness and annealing condition on the fill factor and efficiency of the cell are investigated quantitatively.
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