• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.245-252
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• 2003

We designed a silicon pressure sensor interface circuit with digital calibration capability. The interface circuit is composed of an analog section and a digital section. The analog section amplifies the weak signal from the sensor and the digital section handles the calibration function and communication function between the chip and outside microcontroller that controls the calibration. The digital section is composed of I2C serial interface, memory, trimming register and controller. The I2C serial interface is optimized to suit the need of on-chip silicon microsensor in terms of number of IO pins and silicon area. The major part of the design is to build a controller circuit that implements the optimized I2C protocol. The designed chip was fabricated through IDEC's MPW. We also made a test board and the test result showed that the chip performs the digital calibration function very well as expected.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.509-518
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• 2023

In this paper, we designed a 4Kb poly-fuse OTP IP (Intellectual Property) required for analog circuit trimming and calibration. In order to reduce the BL resistance of the poly-fuse OTP cell, which consists of an NMOS select transistor and a poly-fuse link, the BL stacked metal 2 and metal 3. In order to reduce BL routing resistance, the 4Kb cells are divided into two sub-block cell arrays of 64 rows × 32 rows, with the BL drive circuit located between the two 2Kb sub-block cell arrays, which are split into top and bottom. On the other hand, in this paper, we propose a core circuit for an OTP cell that uses one poly-fuse link to one select transistor. In addition, in the early stages of OTP IP development, we proposed a data sensing circuit that considers the case where the resistance of the unprogrammed poly-fuse can be up to 5kΩ. It also reduces the current flowing through an unprogrammed poly-fuse link in read mode to 138㎂ or less. The poly-fuse OTP cell size designed with DB HiTek 90nm CMOS process is 11.43㎛ × 2.88㎛ (=32.9184㎛2), and the 4Kb poly-fuse OTP IP size is 432.442㎛ × 524.6㎛ (=0.227mm²).

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.438-445
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• 2017

This paper presents a low-power high-resolution band-pass ${\Sigma}{\Delta}$ ADC for accelerometer applications. The proposed band-pass ${\Sigma}{\Delta}$ ADC consists of a high-performance 6-th order feed-forward ${\Sigma}{\Delta}$ modulator with 1-bit quantization and a low-power, area-efficient digital filter. The ADC is fabricated in 180 nm 1P6M mixed-signal CMOS process with a die area of $5mm^2$. This high-resolution ADC got 90 dB peak signal to noise plus distortion ratio (SNDR) and 96 dB dynamic range (DR) over 4 kHz bandwidth, while the intermediate frequency (IF) is shifting from 100 KHz to 200 KHz. The power dissipation of the chip is 5.6 mW under 1.8 V (digital)/3.3 V (analog) power supply.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2007.04a
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• pp.477-480
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• 2007

저전력 OFDM(orthogonal frequency division multiplexing) 시스템용 FFT(Fast-Fourier-Transform) LSI를 저전력 동작을 시키기 위해서 FFT LSI는 current-mode 회로로 구현되었다. Current-mode FFT LSI에서, VIC(Voltage-to-current converter)는 입력 전압 신호를 전류로 바꾸는 first main device이다. 저전력 OFDM을 위해 FFT LSI와 VIC가 한 개의 칩과 결합되는 것을 고려하면, VIC는 전력 손실은 낮고, VIC와 FFT LSI 사이에서의 DC offset 전류는 최소인 작은 크기의 chip으로 설계되어야 한다. 본 논문에서는 새로운 VIC를 제안한다. 선형 동작구간을 넓히고 DC offset 전류를 대폭 감소하는 방법을 제시하였다. VIC는 0.35[um] CMOS process로 구현되었으며, 시뮬레이션 결과에 따르면 제안된 VIC는 current-mode FFT LSI와 0.1[uA] 미만의 매우 작은 DC offset 전류, 1.4[V]의 넓은 선형구간을 갖으며, 저전력으로 동작한다.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.388-390
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• 2006

This paper presents a hybrid SoC design for phase detection of single tone signal. The designed hybrid SoC is composed of three functional blocks, i.e., an analog to digital converter module, a phase detection module and a controller module. A design of the controller module is based on a 16-bit RISC architecture. An I/O interface and an LCD control interface for transmission and display of phase measurement values are included in the design of the controller module. A design of the phase detector is based on a recursive sliding-DFT. The recursive architecture effectively reduces the gate numbers required in the implementation of the module. The ADC module includes a single-bit second-order sigma-delta modulator and a digital decimation filter. The decimation filter is designed to give 98dB of SNR for the ADC. The effective resolution of the ADC is enhanced to 98dB of SNR by the incorporation of a pre FIR filter, a 2-stage cascaded integrator- comb(CIC) filter and a 30-tab FIR filter in the decimation. The hybrid SoC is verified in FPGA and implemented in 0.35 CMOS Technology.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.249-252
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• 2000

A new Smart rower IC's based on the Partial SOI technology was designed for such applications as mobile communication systems, high-speed HDD systems etc. A new methodology of integrating a 0.8${\mu}{\textrm}{m}$ BiCMOS compatible Smart Power technology, high voltage bipolar device, high speed SAVEN bipolar device, LDD NMOSFET and a new LDMOSFET based on the Partial SOI technology is presented in this paper. The high voltage bipolar device has a breakdown voltage of 40V for the output stage of analog circuit. The optimized Partial SOI LDMOSFET has an off-state breakdown voltage of 75 V and a specific on- resistance of 0.249mΩ.$\textrm{cm}^2$ with the drift region length of 3.5${\mu}{\textrm}{m}$. The high-speed SAVEN bipolar device shows cut-off frequency of about 21㎓. The simulator DIOS and DESSIS has been used to get these results.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1444-1445
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• 2008

최근 Wireless Local Area Network(WLAN), Wide-band Code Division Multiple Access(WCDMA), CDMA2000, Bluetooth 등 다양한 모바일 통신 시스템에 대한 수요가 증가하고 있다. 이와 같은 모바일 통신 시스템에는 70dB이상의 SFDR(Spurious Free Dynamic Range)을 가진 ADC(Analog-to-Digital Converter)가 사용된다. 본 논문에서는 모바일 통신 시스템을 위한 SFDR 70dBc의 성능을 제공하는 10비트, 100Msps 파이프라인 ADC를 제안한다. 제안한 ADC는 요구되는 해상도 및 속도 사양을 만족시키기 위해 3단 파이프라인 구조를 채택하였으며, 입력단 SHA(Sample and Hold)회로에는 Nyquist 입력에서도 10비트 이상의 정확도로 신호를 샘플링하기 위해 부트스트래핑 기법 기반의 샘플링 스위치를 적용하였다. residue amplifier 회로에는 전력을 줄이기 위해 8배 residue amplifier 대신 3개의 2배 ressidue amplifier를 사용하였다. ADC의 높은 사양을 만족시키기 위해서는 높은 이득을 가지는 op-amp가 필수적이다. 제안한 ADC 는 0.18um CMOS 공정으로 설계되었으며, 100Msps의 동작 속도에서 70dBc 수준의 SFDR과 60dB 수준의 SNDR(Signal to Noise and Distortion Ratio)을 보여준다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.22-28
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• 2009

This paper presents a fast received signal strength indicator (RSSI) circuit for wireless communication application. The proposed circuit is developed using power detectors and an analog-to-digital converter to achieve a fast settling time. The power detector is consisted of a novel logarithmic variable gain amplifier (VGA), a peak detector, and a comparator in a closed loop. The VGA achieved a wide logarithmic gain range in a closed loop form for stable operation. For the peak detector, a fast settling time and small ripple are obtained using the orthogonal characteristics of quadrature signals. In $0.18-{\mu}m$ CMOS process, the RSSI value settles down in $20{\mu}s$ with power consumption of 20 mW, and the maximum ripple of the RSSI is 30 mV. The proposed RSSI circuit is fabricated with a personal handy-phone system transceiver. The active area is $0.8{\times}0.2\;mm^2$.

• ETRI Journal
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• v.33 no.6
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• pp.897-903
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• 2011

A hybrid ${\Delta}{\Sigma}$ modulator for audio applications is presented in this paper. The pulse generator for digital-to-analog converter alleviates the requirement of the external clock jitter and calibrates the coefficient variation due to a process shift and temperature changes. The input resistor network in the first integrator offers a gain control function in a dB-linear fashion. Also, careful chopper stabilization implementation using return-to-zero scheme in the first continuous-time integrator minimizes both the influence of flicker noise and inflow noise due to chopping. The chip is implemented in a 0.13 ${\mu}m$ CMOS technology (I/O devices) and occupies an active area of 0.37 $mm^2$. The ${\Delta}{\Sigma}$ modulator achieves a dynamic range (A-weighted) of 97.8 dB and a peak signal-to-noise-plus-distortion ratio of 90.0 dB over an audio bandwidth of 20 kHz with a 4.4 mW power consumption from 3.3 V. Also, the gain of the modulator is controlled from -9.5 dB to 8.5 dB, and the performance of the modulator is maintained up to 5 nsRMS external clock jitter.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.4
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• pp.291-296
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• 2015

This paper describes the design of a high-speed comparator for high-speed automatic test equipment (ATE). The normal comparator block, which compares the detected signal from the device under test (DUT) to the reference signal from an internal digital-to-analog converter (DAC), is composed of a rail-to-rail first pre-amplifier, a hysteresis amplifier, and a third pre-amplifier and latch for high-speed operation. The proposed continuous comparator handles high-frequency signals up to 800MHz and a wide range of input signals (0~5V). Also, to compare the differences of both common signals and differential signals between two DUTs, the proposed differential mode comparator exploits one differential difference amplifier (DDA) as a pre-amplifier in the comparator, while a conventional differential comparator uses three op-amps as a pre-amplifier. The chip was implemented with $0.18{\mu}m$ Bipolar CMOS DEMOS (BCDMOS) technology, can compare signal differences of 5mV, and operates in a frequency range up to 800MHz. The chip area is $0.514mm^2$.