• Applied Science and Convergence Technology
• /
• 제24권3호
• /
• pp.60-66
• /
• 2015

The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.

• 한국재료학회지
• /
• 제27권5호
• /
• pp.242-247
• /
• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Journal of Information Display
• /
• 제5권2호
• /
• pp.1-5
• /
• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• 한국재료학회지
• /
• 제4권6호
• /
• pp.620-625
• /
• 1994

자자들은 최근 비고용 Cu-Ta계의 기계적 합금화(Mechanical Alloying) 방법을 이용하여 이계에 있어서 비정질상의 형성에 대한 구조적 확인을 중성자 회절과 EXAFS(Extended X-ray Absorption Fine Structure)의 실험결과로 부터 얻었다. Cu-Ta계와 같이 혼합 엔탈피(Heat of Mixing: $\Delta$ Hmix)가 정인계에 있어서 비정질상 형성에 대한 연구는 구조적인 측면 뿐만 아니라. 시료의 전자물성에 대해서도 많은 연구가 되어야만 할 것으로 사료된다. 따라서 본 논문에서는 120시간 MA방법으로 제작한 시료에 대하여 초전도 천이온도 및 X선 광전자분광 실험에서 얻은 가전자대 구조의 전자물성을 측정하고, 그 결과로부터 이종원자 Cu와 Ta간의 결합은 화하결합에 의한 생성임을 확인하였는데, 이들 결과로부터 120시간 MA를 행하여 얻어진 시료는 확실하게 비정질 합금임을 알 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제27권5호
• /
• pp.282-285
• /
• 2014

We have investigated the structural and electrical properties of Si-Zn-Sn-O (SZTO) thin films deposited by RF magnetron sputtering at various deposition temperatures from RT to $350^{\circ}C$. All the SZTO thin fims are amorphous structure. The mobility of SZTO thin film has been changed depending on the deposition temperature. SZTO thin film transistor shows mobility of 8.715 $cm^2/Vs$ at room temperature. We performed the electrical stress test by applying gate and drain voltage. SZTO thin film transistor shows good stability deposited at room temperature while showing poor stability deposited at $350^{\circ}C$. As a result, the electrical performance and stability have been changed depending on deposition temperature mainly because high deposition temperature loosened the amorphous structure generating more oxygen vacancies.

• Macromolecular Research
• /
• 제15권2호
• /
• pp.185-190
• /
• 2007

Poly(norbornene dimethyl dicarboxylate)s, (PNDMD)s, were prepared by addition polymerization with palladium(II) catalyst from pure exo-monomers, and their structure and properties were compared with those of poly(norbornene dicarboxylic acid dialkyl ester)s, (PNDADA)s. Both polymer series exhibited good solubility in general organic solvents and excellent thermal stability up to $330^{\circ}C$. Wide-angle X-ray scattering (WAXS) study indicated the presence of nano-scale layer-like order in amorphous PNDADAs, while PNDMDs showed random amorphous structure. The glass transition temperatures and dielectric constants of solid polymers were found to decrease as the alkyl side-chain length increases for both polymer series. However, PNDMDs showed lower glass transition temperatures and higher dielectric constants, as compared with those of PNDADAs containing the same alkyl substituents. This difference, caused by the higher side-group mobility of PNDMDs, may be closely related to the nano-scale order in amorphous PNDADAs and its absence in PNDMDs.

• Transactions on Electrical and Electronic Materials
• /
• 제18권4호
• /
• pp.225-228
• /
• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• 한국광물학회지
• /
• 제25권4호
• /
• pp.271-282
• /
• 2012

비정질 실리카겔은 Si와 O로 이루어진 가장 간단한 화합물로서, 표면에 다양한 구조의 물과 수산기, 그리고 합성과정에서 형성된 유기 리간드(ligand)를 함유하고 있어, 지권, 수권, 그리고 생물권의 상호작용을 이해하는 모델 시스템으로서 의미를 갖는다. 본 연구에서는 $^{17}O$ NMR 분광분석을 통해 비정질 실리카겔의 Si-O-Si와 Si-OH 산소 원자환경의 차이를 규명하고자 하였다. 이를 위해 $SiCl_4$의 수화반응을 통해 $^{17}O$이 집적된 비정질 실리카겔을 합성하였다. $^1H$과 $^{29}Si$ NMR 분광분석 결과, 비정질 실리카겔 표면에는 다양한 수소결합 세기를 가진 물과 수산기 이외에, Si-$O{\cdots}R$ 형태의 유기 리간드가 존재함을 확인하였다. 이와 같은 유기 리간드는 에탄올 또는 증류수를 이용해 비정질 실리카겔을 초음파 세척함으로써 상당부분 제거 가능하다. $^{17}O$ NMR 분광분석 결과, 짧은 펄스 길이($0.175{\mu}s$)를 이용한 $^{17}O$ NMR 스펙트럼에서 Si-O-Si와 Si-OH 산소원자 환경이 거의 구분되지 않고 나타나는 반면, 특정 실험조건($2{\mu}s$ 펄스길이)의 $^{17}O$ NMR 스펙트럼에서는 약 0 ppm에서 빠른 동역학적 특성을 가지는 Si-OH로 추정되는 피크가 관찰되었다. 이 피크는 비정질 실리카겔 표면의 유기 리간드가 제거됨에 따라 더 뚜렷하게 관찰되며, 이는 유기 리간드와 비정질 실리카의 산소원자 사이의 상호작용이 존재함을 지시한다. 이와 같은 상호작용은 비정질 실리카겔 표면의 수산기의 원자구조에 대한 정보를 제공하며, 이를 통해 규산염 지구물질의 탈수반응 기작에 대한 이해를 고양시킬 수 있다. 따라서 궁극적으로 지구물질의 탈수반응에 기인하여 일어나는 섭입대의 중간깊이(약 70~300 km)에서 일어나는 지진의 미시적인 원인에 대한 실마리를 제시할 것으로 기대된다.

• 한국세라믹학회지
• /
• 제52권2호
• /
• pp.108-113
• /
• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• 한국염색가공학회지
• /
• 제20권2호
• /
• pp.47-52
• /
• 2008

Nylon textured yarn is usually manufactured by disk type false twist texturing. Dyeing properties of nylon textured yam have not been studied yet. In this study, dyeing properties of nylon textured yam according to draw ratio out of process parameters were investigated. The fact that microstructure of nylon textured yarn in amorphous region particularly is transformed by draw ratio was confirmed indirectly by measurement of dyeing rate because dyeing rate was affected by the structure of amorphous region. Dyeing rate at draw ratio 1.29 was the lowest because the higher draw ratio increase amorphous orientation and disturb dye diffusion into amorphous region. The microstructure according draw ratio was indirectly confirmed by 5% strength, tenacity, elongation. But difference in K/S value and fastness was insignificant.