• 제목/요약/키워드: Amorphous Silicon

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RF-PECVD에 의해 증착된 a-C:H 박막의 물리적 및 전기적 특성 분석 (Physical and electrical properties of a-C:H deposited by RF-PECVD)

  • 김인준;김용탁;최원석;윤대호;홍병유
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.296-300
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    • 2002

  • Thin films of Hydrogenated amorphous carbon(a-C:H) are generally exhibited by high electrical resistivities from 10$^2$ to 10$\^$16/ Ω$.$cm, resulting in an interesting material for high power, high temperature MIS devices applications. The hydrogenated amorphous carbon(a-C:H) films were deposited on silicon and glass using an rf plasma enhanced CVD method. The resultant film properties were evaluated in the respect of material based on r.f. power variation. The hydrogenated amorphous carbon(a-C:H) films of thickness ranging from 30 to 50 m were deposited at the pressure of 1 ton with the mixture of methane and hydrogen. We have used rf-IR( courier transform IR) and AFM(Atomic force microscopy) for determining physical properties and current-voltage(I-V) measurement for electrical Properties.

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Effects of Sintering Additives on the Microstructure Development in Silicon Oxynitride Ceramics

  • Kim, Joosun;Chen, I-Wei
    • The Korean Journal of Ceramics
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    • 제6권3호
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    • pp.224-228
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    • 2000

  • Using a small amount of additives and amorphous Si₂N₂O powders, O-SiAlON ceramics have been hot-pressed and its microstructure and mechanical properties were investigated. Scandium oxide was demonstrated to be an effective densification additive for O-SiAlON. Amorphous Si₂N₂O was densified at relatively low temperatures and a microstructure with acicular grains was developed. Fine grains found in materials obtained from amorphous powders suggest that nucleation and crystallization of O-SiAlOH is relatively easy compared with the Si₃N₄-SiO₂reaction.

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