Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Physical and electrical properties of a-C:H deposited by RF-PECVD

RF-PECVD에 의해 증착된 a-C:H 박막의 물리적 및 전기적 특성 분석

  • 김인준 (성균관대학교 정보통신공학부) ;
  • 김용탁 (성균관대학교 신소재공학과) ;
  • 최원석 (성균관대학교 정보통신공학부) ;
  • 윤대호 (성균관대학교 신소재공학과) ;
  • 홍병유 (플라즈마 응용 표면 기술 연구센터)
  • Published : 2002.07.01
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Abstract

Thin films of Hydrogenated amorphous carbon(a-C:H) are generally exhibited by high electrical resistivities from 10$^2$ to 10$\^$16/ Ω$.$cm, resulting in an interesting material for high power, high temperature MIS devices applications. The hydrogenated amorphous carbon(a-C:H) films were deposited on silicon and glass using an rf plasma enhanced CVD method. The resultant film properties were evaluated in the respect of material based on r.f. power variation. The hydrogenated amorphous carbon(a-C:H) films of thickness ranging from 30 to 50 m were deposited at the pressure of 1 ton with the mixture of methane and hydrogen. We have used rf-IR( courier transform IR) and AFM(Atomic force microscopy) for determining physical properties and current-voltage(I-V) measurement for electrical Properties.

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