• 한국재료학회지
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• 제21권1호
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• pp.67-71
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• 2011

La doped CuO-ZnO-$Al_2O_3$ powders are prepared by sol-gel method with aluminum isopropoxide and primary distilled water as precursor and solvent. In this synthesized process, the obtained metal oxides caused the precursor such as copper (II) nitrate hydrate and zinc (II) nitrate hexahydrate were added. To improve the surface areas of La doped CuO-ZnO-$Al_2O_3$ powder, sorbitan (z)-mono-9-octadecenoate (Span 80) was added. The synthesized powder was calcined at various temperatures. The dopant was found to affect the surface area and particle size of the mixed oxide, in conjunction with the calcined temperature. The structural analysis and textual properties of the synthesized powder were measured with an X-ray Diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), Bruner-Emmett-Teller surface analysis (BET), Thermogravimetry-Differential Thermal analysis (TG/DTA), $^{27}Al$ solid state Nuclear Magnetic Resonance (NMR) and transform infrared microspectroscopy (FT-IR). An increase of surface area with Span 80 was observed on La doped CuO-ZnO-$Al_2O_3$ powders from $25m^2$/g to $41m^2$/g.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.85-89
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• 2018

In this study, functional transparent conducting layers were investigated for Si-based photoelectric applications. Double transparent conductive oxide (TCO) films were deposited on a Si substrate in the sequence of indium tin oxide (ITO) followed by aluminum-doped zinc oxide (AZO). First, we observed that the conductivity and transparency of AZO dominate the overall performance of the double TCO layers. Secondly, the double layered TCO film (consisting of AZO/ITO) deposited by sputtering was compared to a AZO-only film in terms of their optical and electrical properties. We prepared three different AZO films: ITO:3min/AZO:10min, ITO:5min/AZO:7min, and ITO:7min/AZO:4min. The results show that the optical properties (transmittance, absorbance, and reflection) can be controlled by the film composition. This may provide a significant pathway for the manipulation of the optical and electrical properties of photoelectric devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.176.1-176.1
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• 2013

TCO (Transparent Conductive Oxide)는 투명 전도성 산화물 높은 투과율과 낮은 비저항 가지고 있어서 최근 사용된 평판디스플레이 LCD(liquid crystal display), PDP (Plasma Display Panel), OLED (Organic Light Emitting Display) 에 많이 사용되고 있다. 현재 양산화 되고 있는 ITO (Indium tin Oxide)는 좋은 전도율과 높은 투과율로서 가장 많이 쓰인다. 하지만 ITO중에 Indium Oxide는 치명적인 독성을 가지고 있으며 In의 저장량이 적어 시간이 갈수록 가격이 비싸지는 등 여러 가지 단점을 가지고 있다. 그것에 비해 AZO (aluminum-doped zinc oxide)는 독성이 없고 가격도 저렴하여 ITO의 단점을 보완 할 수 있는 물질이다. AZO 증착은 현재 sol-gel, CVD(chemical vapor deposition), Sputter, 등으로 사용되고 있으며 현재 많은 연구가 진행되고 있다. 본 실험에서는 PEN 기판을 사용하였으며, 플라즈마의 열적 데미지로 인한 기판의 변형 등 여러 가지 문제를 해결하기 위하여 박막의 열적 변형이 적고, 고밀도 플라즈마로 양질의 박막 증착이 가능한 FTS (Facing Target Sputtering)방법을 사용하여 AZO박막을 증착시키고 구조적, 전기적, 광학적인 특성을 평가 하였다. 측정 분석 결과 AZO는 가시광 영역에 높은 투과율이 요구되는 Flexible display 표시장치와 OLED, PDP, 유기태양전지 등 많은 영역에 사용이 가능 할 것이라 사료된다.

• 대한금속재료학회지
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• 제50권11호
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• pp.847-854
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• 2012

Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.242-243
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• 2007

Highly transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Corning glass substrate using an Nd:YAG pulsed laser deposition technology. AZO thin films deposited with 650nm thickness showed the best electrical properties of the electrical resistivity of $4.6{\times}10^{-4}[{\Omega}{\cdot}cm]$, a carrier concentration of $9.3{\times}10^{20}[cm^{-3}]$, and a carrier mobility of $31[cm^2/V{\cdot}s]$. Besides, the optical transmittance spectra in visible region (200-800nm) of AZO thin films show an high average transmittance over 90%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1349-1350
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• 2007

Epitaxial thin films of aluminum-doped zinc oxide (AZO) have been deposited on commercial corning glass using an Nd:YAG pulsed laser deposition technology. The structural, electrical and optical properties of these films were investigated as a function of oxygen pressure. The experimental results show that the electrical resistivity of films deposited at 5 mTorr with substrate temperature of $300^{\circ}C$ were $4.633{\times}10^{-4}$. The average transmission of AZO thin films in the visible range were over 90%.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.89-93
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• 2017

For various process pressures, aluminum doped zinc oxide(AZO) films were deposited by in-line pulsed-DC sputtering. The deposited AZO films were optically and electrically investigated and analyzed for the window layers of CIGS solar cell systems. As the pressure was increased from 9 mtorr to 15 mtorr, the thickness of AZO was decreased as a result of scattering and its sheet resistance was rapidly increased. The transmittance of AZO was slightly decreased as the pressure was increased and the calculation of figure of merit(F.O.M) was dependent on the sheet resistance. The structural characteristics of AZO thin films analyzed by X-ray diffraction(XRD) showed no significant dependency according to the pressure.

• 한국세라믹학회지
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• 제44권6호
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• pp.303-307
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• 2007

Transparent In-doped zinc oxide (IZO) thin films are deposited with variation of pulsed DC power at Ar atmosphere on coming 7059 glass substrate by pulsed DC magnetron sputtering. A c-axis oriented IZO thin films were grown in perpendicular to the substrate. The optical transmittance spectra showed high transmittance of over 80% in the UV-visible region and exhibited the absorption edge of about 350 nm. Also, the IZO films exhibited the resistivity of ${\sim}10^{-3}{\Omega}\;cm$ and the mobility of ${\sim}6cm/V\;s$. Organic Light-emitting diodes (OLEDs) with IZO/N,N'-diphenyl-N, N'-bis(3-methylphenl)-1, 1'-biphenyl-4,4'-diamine (TPD)/tris (8-hydroxyquinoline) aluminum ($Alq_3$)/LiF/Al configuration were fabricated. LiF layer inserted is used as an interfacial layer to increase the electron injection. Under a current density of $100\;mA/cm^2$, the OLEDs show an excellent efficiency (9.4 V turn-on voltage) and a good brightness ($12000\;cd/m^2$) of the emission light from the devices. These results indicate that IZO films hold promise for anode electrodes in the OLEDs application.

• 한국결정성장학회지
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• 제8권4호
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• pp.587-591
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• 1998

마이크로 웨이브를 보조 여기원으로 사용한 직류 magnetron 스퍼터링법으로 Aluminum이 2wt% 포함되어 있는 Zn:Al 합금타겟을 사용하여 AZO(Aluminum doped zinc oxide) 투명 전도막을 제막하였고 그 영향을 조사하였다. 타겟인가 전압이 420V에서 증착된 막의 투과율, 비저항 그리고 증착속도는 각각 50~70%, $5.5{\times}10^{-3}{\Omega}$cm 그리고 6,000$\AA\textrm{mm}^2$/J 이었다. 이 막을 40$0^{\circ}C$에서 30분간의 열처리하면 광투과율은 80% 이상으로 열처리전에 비해 향상되었으며 전도도는 2배 이상 향상되어 비저항값이 $2.0{\times}10^{-3}{\Omega}$cm인 막을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.1-426.1
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• 2016

We report high work function Aluminum doped zinc oxide (AZO) films as insertion layer as a function of O2 flow rate between transparent conducting oxides (TCO) and hydrogenated amorphous silicon oxide (a-SiOx:H) layer to improve open circuit voltage (Voc) and fill factor (FF) for high efficiency thin film solar cell. However, amorphous silicon (a-Si:H) solar cells exhibit poor fill factors due to a Schottky barrier like impedance at the interface between a-SiOx:H windows and TCO. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiOx:H. In this study, we report on the silicon thin film solar cell by using as insertion layer of O2 reactive AZO films between TCO and p-type a-SiOx:H. Significant efficiency enhancement was demonstrated by using high work-function layers (4.95 eV at O2=2 sccm) for engineering the work function at the key interfaces to raise FF as well as Voc. Therefore, we can be obtained the conversion efficiency of 7 % at 13mA/cm2 of the current density (Jsc) and 63.35 % of FF.