• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.859-863
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• 2007

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.338-339
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• 2005

The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.329-334
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• 2008

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• 공업화학
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• 제8권5호
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• pp.784-789
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• 1997

전도성 고분자인 폴리피롤(PPy)을 전해질로 하는 알루미늄(Al)고체전해 캐패시터를 제작하기 위하여 알루미늄 산화피막($Al_2O_3$) 위에 화학산화중합(CP)법으로 얇은 PPy층을 형성시키고, 이 층을 양극으로 이용하여 피롤(Py)을 전해산화중합(EP)시켰다. 캐패시터 특성에 영향을 미치는 중합조건을 조사한 결과, 지지전해질로서 sodium p-toluenesulfonate (TsONa)를 사용하고, 소자당 2.0~4.0 mA의 정전류를 인가, 전해중합 후 제작한 캐패시터의 전기적 특성 및 임피던스 특성이 가장 우수하였다.

• 한국재료학회지
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• 제10권5호
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• pp.369-374
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• 2000

전해콘텐서용 알루미늄박의 직류에칭에서 1M 염산욕에 부식억제제로 1M 황산을 첨가했을 때의 영향을 조사하기 위하여 에치 피트의 밀도, 에치 터널의 길이와 직경, 정전 용량 등의 변화를 분석하였다. 황산이온은 부식억제제로서 염소이온보다 시료의 표면에서 에치 피트의 밀도를 증가시키며 에치 터널의 직경은 감소하나 길이를 증가시킴으로써 전체적으로 표면적이 커지고 또한 정전 용량 값이 증가하였다. 황산이온을 첨가하였을 경우 전류 밀도가 $0.9A/\textrm{cm}^2$ 보다 낮은 경우에는 정전 용량 값이 작지만 그 이상에서는 정전용량이 현저하게 증가하였다.

• 한국재료학회지
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• 제21권6호
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• pp.309-313
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• 2011

The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and $PdCl_2$ solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 $nF/cm^2$, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of $10^4{\mu}A$.

• 한국재료학회지
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• 제11권4호
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• pp.329-334
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• 2001

붕산용액에서 양극산화법으로 장벽형 산화피막을 형성시킨 후 미세조직을 관찰하였다. 양극산화시 인가되는 전압에 따른 피막의 성장속도는 1.54nm/v의 직선적인 관계를 나타냈으며 300v의 인가전압에서 생성된 산화피막의 조직은 50$0^{\circ}C$에서 열처리하였을 경우 피막의 상 전이가 일어나지 않았으나 높은 인가전압에서 생성된 산화피막의 경우는 피막의 조직이 비정질에서 ${\gamma}$-alumina로 변태되는 것이 관찰되었다. 또한 피막이 전자빔 조사에 의해서도 ${\gamma}$-alumina로 전이가 일어났다.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.62.1-62
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• 2003

Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45$0^{\circ}C$ annealing for 30 minutes has the lowest density of the interface states.

• 전기학회논문지
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• 제58권12호
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• 한국전자파학회논문지
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• 제22권12호
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• pp.1069-1077
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• 2011

본 논문에서는 선택적 산화 알루미늄(SAAO: Selectively Anodized Aluminum Oxide) 기판을 이용하여 2.5 GHz 8 W급 소형 GaN HEMT 전력 증폭기 모듈을 설계, 제작하였다. SAAO 기판 공정은 최근 Wavenics사에서 제안한 특허 기술로서, 알루미늄을 웨이퍼로 이용한다. 본 연구에 사용된 능동 소자는 최근 발표된 TriQuint사의 칩 형태 의 GaN HEMT이다. 최적의 임피던스는 수동 조정 소자가 내장된 지그를 사용하여 실험적으로 결정하였다. 결정된 임피던스를 이용하여, 입 출력 임피던스 정합 회로를 EM co-시뮬레이션을 이용하여 F급으로 설계를 수행하였으며, SAAO 기판에 구현하였다. 이때, 소형의 패키지(모듈)에 집적하기 위하여 인덕터와 커패시터는 각각 spiral inductor, single layer capacitor를 사용하였다. 소형으로($4.4{\times}4.4\;mm^2$) 패키지된 전력 증폭기 모듈의 경우, 출력은 8 W, 효율은 40 % 그리고 2차 및 3차 고조파에 대한 고조파 억제는 30 dBc 이상의 특성을 보였다.