Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Fabrication and Electrical Properties of SiC MIS Structures using Aluminum Oxide Thin Film

산화알루미늄 박막을 이용한 SiC MIS 구조의 제작 및 전기적 특성

  • 최행철 (청주대학교 전자정보공학부) ;
  • 정순원 (한국전자통신연구원 IT융합.부품연구소) ;
  • 정상현 (청주대학교 전자정보공학부) ;
  • 윤형선 (청주대학교 전자정보공학부) ;
  • 김광호 (청주대학교 전자정보공학부)
  • Published : 2007.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

Aluminum oxide films were deposited on n-type 6H-SiC(0001) substrates by RF magnetron sputtering technique for MIS devices applications. Well-behaved C-V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $4.6{\times}10^{10}/cm^2\;eV$ in the upper half of the bandgap. The gate leakage current densities of the MIS structures were about $10^{-8}A/cm^2$ and about $10^{-6}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for a ${\pm}1\;MV/cm$, respectively These results indicate that the interface property of this structure is enough quality to MIS devices applications.

Keywords

References

  1. M. Hasanuzzaman, S. K. Islam, and L. M. Tolbert, 'Effects of temperature variation (300-600 K) in MOSFET modeling in 6H-silicon carbide', Solid-State Electronics, Vol. 48, Iss. 1, p. 125, 2004 https://doi.org/10.1016/S0038-1101(03)00293-4
  2. C. E. Weitzel, J. W. Palmour, C. H. Carter Jr., K. Moore, K. J. Nordquist, S. Allen, C. Thero, and M. Bhatnagar, 'Silicon carbide high-power devices', IEEE Trans. Electron Devices, Vol. 43, No. 10, p. 1732, 1996 https://doi.org/10.1109/16.536819
  3. V. V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, 'Intrinsic $SiC/SiO_{2}$ interface states', Phys. Stat. Sol. (a), Vol. 162, p. 321, 1997 https://doi.org/10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO;2-F
  4. C. Raynaud, J.-L. Autran, J. B. Broit, B. Balland, N. Becourt, T. Billon, and C. Jaussaud, 'Comparison of trapping-detrapping properties of mobile charge in alkali contaminated metal-oxide-silicon carbide structures', Appl. Phys. Lett., Vol. 66, No. 18, p. 2340, 1995 https://doi.org/10.1063/1.113976
  5. J. A. Cooper, 'Advances in SiC MOS technology', Phys. Stat. Sol. (a), Vol. 162, p. 305, 1997 https://doi.org/10.1002/1521-396X(199707)162:1<305::AID-PSSA305>3.0.CO;2-7
  6. D. M. Brown, E. Downey, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, W. Henessy, and G. Michon, 'Silicon carbide MOSFET integrated circuit technology', Phys. Stat. Sol. (a), Vol. 162, p. 459, 1997 https://doi.org/10.1002/1521-396X(199707)162:1<459::AID-PSSA459>3.0.CO;2-4
  7. S. Sridevan, V. Misra, P. K. McLarty, B. J. Baliga, and J. J. Wortman, 'Rapid thermal chemical vapor deposited oxides in N-type 6H-silicon carbide', IEEE Electron Device Letters, Vol. 16, No. 11, p. 524, 1995 https://doi.org/10.1109/55.468288
  8. X. W. Wang, Z. J. Luo, and T.-P. Ma, 'High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric', IEEE Trans. Electron Devices, Vol. 47, No. 2, p. 458, 2000 https://doi.org/10.1109/16.822294
  9. T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, 'Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface', Physical Review Letters, Vol. 98, p. 136105, 2007 https://doi.org/10.1103/PhysRevLett.98.136105
  10. 김용성, 김광호, '반응성 RF 마그네트론 스퍼터링 법을 이용한 AIN/SiC 구조의 제작 및 특성', 전기전자재료학회논문지, 18권, 11호, p. 977, 2005
  11. 김용성, 김광호, '6H-SiC 위에 형성한 에피택 시 AIN 박막 구조에 대한 전기적 특성의 평가온도 의존성', 전기전자재료학회논문지, 19권, 1호, p. 18, 2006 https://doi.org/10.4313/JKEM.2006.19.1.018
  12. 김용성, '질화 알루미늄 박막을 게이트 절연막으로 이용한 SiC MIS device의 제작 및 특성에 관한 연구', 청주대학교 박사학위논문, p. 37, 2006
  13. A. Paskaleva, R. R. Ciechonski, M. Syvajarvi, E. Atanassova, and R. Yakimova, 'Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with $Al_{2}O_{3}$ as gate dielectric', J. Appl. Phys., Vol. 97, p. 124507, 2005 https://doi.org/10.1063/1.1938267
  14. S.-W. Huang and J.-G. Hwu, 'Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation', IEEE Trans. Electron Devices, Vol. 51, No. 11, p. 1877, 2004 https://doi.org/10.1109/TED.2004.837376
  15. K. Fujihira, Y. Tarui, M. Imaizumi, K. Ohtsuka, T. Takami, T. Shiramizu, K. Kawase, J. Tanimura, and T. Ozeki, 'Characteristics of 4H-SiC MOS interface annealed in $N_{2}O$', Solid-State Electronics, Vol. 49, No. 6, p. 896, 2005 https://doi.org/10.1016/j.sse.2004.10.016
  16. P. T. Lai, J. P. Xu, and C. L. Chan, 'Effects of wet $N_{2}O$ oxidation on interface properties of 6H-SiC MOS capacitors', IEEE Electron Device Letters, Vol. 23, No. 7, p. 410, 2002 https://doi.org/10.1109/LED.2002.1015220
  17. T. Chen, Z. Luo, J. D. Cressler, T. F. Isaacs-Smith, J. R. Williams, G. Chung, and S. D. Clark, 'The effects of NO passivation on the radiation response of $SiO_{2}/4H-SiC$ MOS capacitors', Solid-State Electronics, Vol. 46, No. 12, p. 2231, 2002 https://doi.org/10.1016/S0038-1101(02)00236-8