Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 16 Issue 9
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- Pages.62.1-62
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- 2003
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Annealing Effects on Ultra thin MOS Capacitors
- Ng, Alvin Chi-hai (Dept. of Electronic Engineering, Chinese university of Hong Kong) ;
- Xu, Jun (Dept. of Electronic Engineering, Chinese university of Hong Kong) ;
- Xu, J.B. (Dept. of Electronic Engineering, Chinese university of Hong Kong) ;
- Cheung, W.Y. (Dept. of Electronic Engineering, Chinese university of Hong Kong)
- Published : 2003.09.01
Abstract
Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45
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