• Journal of Technologic Dentistry
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• v.27 no.1
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• pp.73-78
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• 2005

The surface-reacted layer of titanium castings greatly affects their mechanical properties. This study analyzed the interfacial zone of Ti-20%Zr-5%Cr alloy castings obtained from phosphate bonded investment and examined the relationship between the surface-reacted layer and hardness. The Vickers hardness of cast disks were tested at 20$\mu m$ intervals from the surface to 120$\mu m$ in depth. The cross-section was observed metallurgically, and line profile of the reacted layer was conducted under the EDX. The surface-reacted layer of Ti-20%Zr-5%Cr alloy is showed a similar tendency to Ti-6%Al-4%V alloy in thickness, and also Si diffusion in multiple reacted layer of Ti-20%Zr-5%Cr alloy is less than cp Ti and similar to Ti-6%Al-4%V alloy. The Vickers hardness in the surface layer was greater than in the inner part, and the Vickers hardness of Ti-20%Zr-5%Cr alloy ranged 650 to 390 and cp Ti ranged 810 to 160, Ti-6%Al-4%V alloy ranged 710 to 530 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.277-278
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• 2005

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

• ETRI Journal
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• v.38 no.4
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• pp.675-684
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• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.6-10
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• 2009

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.377-382
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• 2007

In this study, we report the synthesis of the single-walled carbon nanotubes(SWCNTs) using laminated catalyst(Al/Fe/Al) layer deposited by sputter on Si(001). SWCNTs are grown by thermal chemical vapor deposition (TCVD) method. As the results of scanning electron microscopy(SEM), high resolution transmission electron microscopy(HR-TEM) and Raman spectroscopy, we confirmed the SWCNTs bundles with narrow diameter distribution of $1.14{\sim}1.32\;nm$ and average G&D ratio of 22.76. Compare to the sample having Fe/Al catalyst layer, it can be proposed that the top-aluminum incorporated with iron catalyst plays an important role in growing process of CNTs as a agglomeration barrier of the Fe catalyst. Thus, we suggest that a proper quantity of aluminium metal incorporated in Fe catalyst induce small and uniform iron catalysts causing SWCNTs with narrow diameter distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.2-2
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• 2011

Single-walled carbon nanotubes (SWNTs) have been considered as a promising candidate for nextgeneration electronics due to its extraordinary electrical properties associated with one-dimensional structure. Since diversity in electronic structure depends on geometrical features, the major concern has been focused on obtaining the diameter, chirality, and density controlled SWNTs. Despite huge efforts, the controlled synthesis of SWNTs has not been achieved. There have been various approaches to synthesize controlled SWNTs by preparation of homogeneously sized catalyst because the SWNTs diameter highly depends on catalyst nanoparticles size. In this study, geometrically controlled SWNTs were synthesized using designed catalytic layers: (a) morphologically modified Al2O3 supporting layer (Fe/Al2O3/Si), (b) Mo capping layer (Mo/Fe/Al/Si), and (c) heat-driven diffusion and subsequent evaporation process of Fe catalytic nanoparticles (Al2O3/Fe/Al2O3/Si). These results clearly revealed that (a) the grain diameter and RMS roughness of Al2O3 supporting layer play a key role as a diffusion barrier for obtaining Fe nanoparticles with a uniform and small size, (b) a density and diameter of SWNTs can be simultaneously controlled by adjusting a thickness of Mo capping layer on Fe catalytic layer, and (c) SWNTs diameter was successfully controlled within a few A scale even with its fine distribution. This precise control results in bandgap manipulation of the semiconducting SWNTs, determined by direct comparison of Raman spectra and theory of extended tight binding Kataura plot. We suggest that these results provide a simple and possible way for the direct growth of diameter, density, and bandgap controlled SWNTs by precise controlling the formation of catalytic films, which will be in demand for future electronic applications.

• Journal of Powder Materials
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• v.28 no.5
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• pp.396-402
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• 2021

Stainless steel, a type of steel used for high-temperature parts, may cause damage when exposed to high temperatures, requiring additional coatings. In particular, the Cr₂O₃ product layer is unstable at 1000℃ and higher temperatures; therefore, it is necessary to improve the oxidation resistance. In this study, an aluminide (Fe₂Al₅ and FeAl₃) coating layer was formed on the surface of STS 630 specimens through Al diffusion coatings from 500℃ to 700℃ for up to 25 h. Because the coating layers of Fe₂Al₅ and FeAl₃ could not withstand temperatures above 1200℃, an Al₂O₃ coating layer is deposited on the surface through static oxidation treatment at 500℃ for 10 h. To confirm the ablation resistance of the resulting coating layer, dynamic flame exposure tests were conducted at 1350℃ for 5-15 min. Excellent oxidation resistance is observed in the coated base material beneath the aluminide layer. The conditions of the flame tests and coating are discussed in terms of microstructural variations.

• Journal of Surface Science and Engineering
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• v.25 no.5
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• pp.235-252
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel sheet by D.C. magnetron sputtering using Al target and Ti plate. The high temperature oxidation of (T, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films with the variation of composition has been investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The high temperature oxidation test of (Ti, Al)N showed that (Ti, Al)N has better high temperature resistance than TiN and TiC films. TiC films were cracked at 40$0^{\circ}C$ in air TiN films quickly were oxidised at $600^{\circ}C$, were spalled more than $700^{\circ}C$. But (Ti, Al)N films are relatively stable to$ 900^{\circ}C$. The good resistance to high temperature oxida-tion of (Ti, Al)N films are due to the formation of dense Al2O3 and TiO2 oxide layer. Especially, Al2O3 oxide layer is more important. The results obtained from this study show, it is believe that the (Ti, Al)N film by D.C. magnetron sputtering is promising for the use of high temperature and wear resistance mate-rials.

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.169-173
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• 2012

Recently, various attempts to produce a heat sink made of Al 6xxx alloys have been carried out using die-casting. In order to apply die-casting, the Al alloys should be verified for die-soldering ability with die steel. It is generally well known that both Fe and Mn contents have effects on decreasing die soldering, especially with aluminum alloys containing substantial amounts of Si. However, die soldering has not been widely studied for the low Si aluminum (1.0~2.0wt%) alloys. Therefore, in this study, an investigation was performed to consider how the soldering phenomena were affected by Fe and Mn contents in low Si aluminum alloys. Each aluminum alloy was melted and held at $680^{\circ}C$. Then, STD61 substrate was dipped for 2 hr in the melt. The specimens, which were air cooled, were observed using a scanning electron microscope and were line analyzed by an electron probe micro analyzer. The SEM results of the dipping soldering test showed an Al-Fe inter-metallic layer in the microstructure. With increasing Fe content up to 0.35%, the Al-Fe inter-metallic layer became thicker. In Al-1.0%Si alloy, the additional content of Mn also increased the thickness of the inter-metallic layer compared to that in the alloy without Mn. In addition, EPMA analysis showed that Al-Fe inter-metallic compounds such as $Al_2Fe$, $Al_3Fe$, and $Al_5Fe_2$ formed in the die soldering layers.