Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.277-278
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- 2005
Impedance spectroscopy analysis of polymer light emitting diodes with the LiF buffer layer at the cathode/organic interface
LiF 음극 버퍼층을 사용한 폴리머의 효율 향상에 관한 임피던스 분석
- Kim, H.M. (School of Information and Communication Engineering, Sungkyunkwan Univ.) ;
- Jang, K.S. (School of Information and Communication Engineering, Sungkyunkwan Univ.) ;
- Yi, J. (School of Information and Communication Engineering, Sungkyunkwan Univ.) ;
- Sohn, Sun-Young (Department of Physics, Sungkyunkwan Univ.) ;
- Park, Kuen-Hee (Department of Physics, Sungkyunkwan Univ.) ;
- Jung, Dong-Geun (Department of Physics, Sungkyunkwan Univ.)
- 김현민 (성균관대학교 전자전기공학과) ;
- 장경수 (성균관대학교 전자전기공학과) ;
- 이준신 (성균관대학교 전자전기공학과) ;
- 손선영 (성균관대학교 물리학과) ;
- 박근희 (성균관대학교 물리학과) ;
- 정동근 (성균관대학교 물리학과)
- Published : 2005.11.10
Abstract
Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance (