• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.535-538
• /
• 2000

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.6
• /
• pp.533-537
• /
• 2000

It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.574-577
• /
• 1999

The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.2
• /
• pp.139-144
• /
• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• Proceedings of the KIEE Conference
• /
• 2000.11c
• /
• pp.419-421
• /
• 2000

In this study, we observed the photoinduced birefringence of Ag polarized-photodoping in chalcogenide thin film and the double-layer of Ag doped chalcogenide thin film using the irradiation with the polarized He-Ne laser light. The photoinduced birefringence of Ag polarized-photodoping results in increasing the sensitivity of linearly anisotropy intensity and birefringence(${\Delta}n$). The Ag polarized-photodoping shows improvement of the photoinduced anisotropy property, in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.35 no.8
• /
• pp.316-322
• /
• 1986

In this paper, the photodoping effect on the interface of Ag-amorphous As2S3 thin film has been investigated by measuring the resistance change of the Ag layer, the absorption coefficient of the As2S3, the optical density of As2S3 layer and the short-circuit photocurrents under light irradiation. As the experimental results, the photodissolution rate and the photodiffusion rate depends on the magnitude of photon energy absorbed in the As2S3. The sensitivity limit of the photodissolution rate at Ag layer was about 630[nm] and the sensitivity limit of the photodiffusion rate at the Ag-As2S3 interface was about 680[nm]. Also, it was found that the depth of photodiffusion was proportional to the square root of exposing time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.04b
• /
• pp.81-84
• /
• 2002

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{10}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide($As_{10}Ge_{10}Se_{15}S_{35}$). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.

• Electrical & Electronic Materials
• /
• v.8 no.4
• /
• pp.472-477
• /
• 1995

The degree of the photodoping process in Ag(100[.angs.])/a-Se$_{75}$Ge$_{25}$(1500[.angs.]) films has measured as a function of the photon energy between 1.5[eV] and 2.9[eV] with the exposing time. The "window" characteristics of Ag occur at 3400[.angs.] (3.65[eV]) and Ag is almost transparent in this region. It is shown that transmittance is almost constant (40-50%) for the wavelength ranges of our experiment. It is found that the energy gap of a unexposed a-Se$_{75}$Ge$_{25}$ film is 1.81[eV]. Ag photodoping process results in the photodarkening effect which the absorption edge shifts to the long wavelength. Especially, very large band shift (-0.3[eV]) is obtained by exposing He-Ne laser(6328[.angs.]).. We have obtained "the U-type property" for Ar He-Ne and semiconductor laser. It is associated with the variation of energy gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.l.gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.10
• /
• pp.852-858
• /
• 2007

The dependence of substrate on the Ag photodoping phenomenon into amonhous $({\alpha}-)$ GeSe thin film has been investigated using holographic method. A 442 nm HeCd laser was utilized as a light source for the holographic exposure and a 632.8 nm HeNe laser to measure the variation of diffraction efficiency $(\eta)$ in real time. The films (Ag and ${\alpha}-GeSe$) were thermally deposited on the substrates, i.e. p-type Si(100), n-type Si(100) and slide glass. The sample structures prepared were two types: type I (Ag/${\alpha}$-SeGe/substrate) and type II (${\alpha}$-SeGe/Ag/substrate). The $\eta$ kinetics comprised to be three steps in which $\eta$ initially increases, is saturated to be maximized $(\eta_M)$, and then decreases relatively gradually. For the same substrate, the $\eta_M$ values of the type II were higher than those of type I. In addition, the type II exhibited the highest $\eta_M$ for p-type Si substrate, while that in type I was observed for n-type Si substrate. These tendency is explained by the diffusion of minority carrier in the films and the change of magnitude and direction in internal fields generated at the film interfaces. Atomic-force-microscope (AFM) was used to observe relief-type grating patterns.