The photoinduced birefringence of chalcogenide thin film by the Ag Polarized-Photodoping

Ag 편광-광도핑에 의한 칼코게나이드 박막의 광유기 복굴절

  • 장선주 (광운대학교 공과대학 전자재료공학과) ;
  • 박종화 (광운대학교 공과대학 전자재료공학과) ;
  • 여철호 (광운대학교 공과대학 전자재료공학과) ;
  • 이영종 (여주대학 전자과) ;
  • 정홍배 (광운대학교 공과대학 전자재료공학과)
  • Published : 2000.11.25


In this study, we observed the photoinduced birefringence of Ag polarized-photodoping in chalcogenide thin film and the double-layer of Ag doped chalcogenide thin film using the irradiation with the polarized He-Ne laser light. The photoinduced birefringence of Ag polarized-photodoping results in increasing the sensitivity of linearly anisotropy intensity and birefringence(${\Delta}n$). The Ag polarized-photodoping shows improvement of the photoinduced anisotropy property, in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.