• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.19-24
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• 2003

The experimental and simulation study of insulator failure by cement growth on suspended insulators (16,500kgf) for transmission line was discussed. To get more practical and analytic calculation results, the advanced program was used. This analysis tool was possible to calculate stress behaviors with mechanical loading when cement displacement happened. From simulation results, the. cement displacement changed with linear according to temperature. The shear stress was about $7 kgf/mm^2$ at $0.07\%$ displacement provided from $200^{\circ}C$, then it could be seen that the cement would be fractured even if $0.07\%$ displacement acted, because the cement had about $7-9 kgf/mm^2$ flexure strength. The curve patterns of shear stress with the increase of mechanical loading were changed at $0.02\%$ as a turning point, when the cement displacement was over $0.02\%$ the shear stresses decreased reversely with the increase of mechanical loading. From analysis on porcelain body it was known that there were enough margin to protect the fracture of porcelain body before the cement

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.121-125
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• 1999

Vertically well aligned multiwall carbon nanotubes were grown on nickel coated different substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 650$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. The surface roughness of nickel layer increased as NH3 etching time increased. The diameters of the nanotubes decreased and the density of nanotubes increased as NH3 etching time increased. diameter of nanotube was 30 to 70 nm. Nickel cap was observed on the top of the grown nanotube and very thin carbon amorphous layer was fonde on the nickel cap.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.42-47
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• 2006

In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{\circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.36-40
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• 2007

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• Structural Engineering and Mechanics
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• v.57 no.6
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• pp.1015-1038
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• 2016

In the current research an advanced criterion with non-associated flow rule (non-AFR) for depicting the behavior of anisotropic sheet metals is presented to consider the strength differential effects (SDEs) for these materials. Owing to the fact that Lou et al. (2013) yield function is dependent on structure of an anisotropic material (BCC, FCC and HCP), an advanced yield function with inspiring of Yoon et al. (2014) yield function is proposed which is dependent upon anisotropic structures. Furthermore, to compute Lankford coefficients, a new pressure sensitive plastic potential function which would be dependent to anisotropic structure is presented and coupled with the proposed yield function with employing a non-AFR in a novel criterion which is called here 'dvanced criterion'. Totally eighteen experimental data are required to calibrate the criterion contained of directional tensile and compressive yield stresses for the yield function and directional Lankford coefficients for the plastic potential function. To verify the criterion, three anisotropic sheet metals with different structures are taken as case studies such as Al 2008-T4 (a BCC material), Al 2090-T3 (a FCC material) and AZ31 (a HCP material).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.411-412
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• 2007

EL (electro luminescent) is generally studied as a large size plane light emitting device and flexible light source because of it's simple manufacturing process. In this experiment, we manufactured flexible white emitting light source using Ni-foil with blue phosphor and color change materials. With increasing the thickness of color change material, the luminance of white emission is increased and the color coordinate of white color was shifted to pure white of (0.317,0.328) by strong emission of color change materials excited by blue excitation spectra. Also the luminance level was 30% higher in white emitting light device than blue only light source.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.639-646
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• 2006

Over the last two decades, microbiologically influenced corrosion (MIC) of metallic materials has received considerable attention due to its serious effects on industrial field. In this context, it is important to devise control methods which inhibit biofilm formation on various metallic compounds and are compatible with environment. It was change of various conditions (duty cycle, current density, $AgNO_3$ concentration and pH) for injection of Ag particles in anodized Aluminum alloy pore using pulsed current. Optimal condition was obtained by means of FE-SEM, ICP analysis etc. The antibacterial metal's specimen were manufactured under optimal condition and this specimen were tested the antibacterial characterization and anticorrosion characterization. In result of test, we can confirmed that the antibacterial characterization and anticorrosion characterization of the specimens of injected Ag particles in anodized Aluminum alloy pore using pulsed current were better than the anodized Aluminum alloy specimens.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

• Journal of Korean Tunnelling and Underground Space Association
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• v.25 no.6
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• pp.495-507
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• 2023

Considering the continuing discussion about the Korea-Japan undersea tunnel, it is necessary to conduct a scientific investigation into tunnel deformation associated with large ground movements at fault. This paper presents findings obtained from numerical experiments to investigate a seismic lining that adopts rubber-like material. We utilized the user material subroutine to obtain the deformation gradient of the hyperelastic material. Additionally, polar decomposition is used to analyze the results, where the data is displayed on a series of two-dimensional planes using the principal direction, which facilitates a better insight into the deformation. Tunnel engineers could refer to this paper for the procedure to investigate the deformation of hyperelastic material.