Vertically aligned carbon nanotubes grown on various substrates by plasma enhanced chemical vapor deposition

  • Han, Jae-hee (Department of Materials engineering, sungkyunkwan University) ;
  • Moon, Byung-Sik (Department of Physics Sungkyunkwan University) ;
  • Yang, Won-Suk (Department of Materials engineering, sungkyunkwan University) ;
  • Yoo, Ji-Beom (Department of Materials engineering, sungkyunkwan University) ;
  • Park, Chong-Yun (Department of Physics Sungkyunkwan University) ;
  • Han, In-Taek (Material and Devices sector, Samsung Advanced Institute of Technology) ;
  • Lee, Nae-Sung (Material and Devices sector, Samsung Advanced Institute of Technolog) ;
  • Kim, Chong-Min (Material and Devices sector, Samsung Advanced Institute of Technology) ;
  • Kim, Tae-Il (Material and Devices sector, Samsung Advanced Institute of Technology)
  • Published : 1999.10.01

Abstract

Vertically well aligned multiwall carbon nanotubes were grown on nickel coated different substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 650$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. The surface roughness of nickel layer increased as NH3 etching time increased. The diameters of the nanotubes decreased and the density of nanotubes increased as NH3 etching time increased. diameter of nanotube was 30 to 70 nm. Nickel cap was observed on the top of the grown nanotube and very thin carbon amorphous layer was fonde on the nickel cap.

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