• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.7
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• pp.1285-1290
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• 2017

We prepared ITZO thin films with various thicknesses on glass substrates using RF magnetron sputtering and investigated electrical, optical and structural properties of the thin film. Sheet resistance of ITZO thin film showed a decreasing trend on the increase of film thickness, but its resistivity exhibited a substantially constant value of $5.06{\pm}1.23{\times}10^{-4}{\Omega}-cm$. Transmittance of ITZO thin film moved to the long-wavelength with the increase of film thickness. Figure of merit in a visible light and an absorption area of P3HT:PCBM organic active layer of the 360nm-thick IZTO thin film was $8.21{\times}10^{-3}{\Omega}^{-1}$ and $9.29{\times}10^{-3}{\Omega}^{-1}$, respectively. Through XRD and AFM measurements, it was confirmed that all the ITZO thin films have amorphous structure and the surface roughness of films are very smooth in the range of 0.561 to 0.263 nm. In this study, it was found that amorphous ITZO thin film is a very promising material for organic solar cell.

• Microbiology and Biotechnology Letters
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• v.31 no.3
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• pp.235-241
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• 2003

For the biological control of Phytophthora blight of red-pepper caused by Phytophthora capsici, an antibiotic-producing plant growth promoting rhizobacteria (PGPR) Bacillus sp. KL 39 was selected from a local soil of Kyongbuk, Korea. The strain KL 39 was identified as Bacillus megaterium by various cultural, biochemical test and API and Microlog system. B. megaterium KL 39 could produce the highest antifungal antibiotic after 40 h of incubation under the optimal medium which was 0.4% fructose, 0.3% yeast extract, and 5 mM KCl at 30 C with initial pH 8.0. The antifungal antibiotic KL 39 was purified by Diaion HP-20 column, silica gel column, Sephadex LH-20 column, and HPLC. Its RF value was confirmed 0.32 by thin-layer chromatography with Ethanol:Ammonia:Water = 8:1:1. The crude antibiotic KL39 was active against a broad range of plant pathogenic fungi, Rhizoctonia solani, Pyricularia oryzae, Monilinia fructicola, Botrytis cinenea, Alteranria kikuchiana, Fusarium oxysporum and Fusarium solani. The purified antifungal antibiotic KL39 had a powerful biocontrol activity against red-pepper phytophthora blight disease with in vivo pot test as well as the strain B. megaterium KL 39.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Korean Journal of Environmental Agriculture
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• v.18 no.3
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• pp.259-264
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• 1999

This experiment was carried out to investigate the changes of antioxidant enzymes activities in soybean leaves, exposed to 0.2ppm of ozone. We have investigated whether Eunhakong and Samnamkong may scavenge ozone induced activated oxygen species by invoking antioxidant enzymes such as ascorbate peroxidase(APOX), glutathione reductase(GR), monodehydroascorbate reductase(MDHAR), dehydroascorbate reductase(DHAR). Ozone exposure preferentially increased APOX, GR and MDHAR activities, whereas that of DHAR only decreased slowly. When soybean plans were fumigated with 0.2ppm of ozone, the levels of ascorbate and reduced glutathione decreased within a few hours. In eunhakong, which has, slightly a strong tolerance to ozone, was found to have higher antioxidants levels than samnamkong. However, there was no remarkable difference two cultivars in the activities of enzymes which protect plant against active oxygen species.

• Journal of Marine Bioscience and Biotechnology
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• v.1 no.4
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• pp.268-274
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• 2006

Bacillus sp. DYL130 producing biosurfactant was isolated from soil samples in the Duck-yu mountain and identified as Bacillus sp. by analysis of 16S rDNA sequence. Purification of the biosurfactant was performed by using affinity chromatography and TLC. The biosurfactant of culture medium from Bacillus sp. DYL130 was eluted with 100% methanol using affinity chromatography. To remove methanol, a rotary evaporator was used and enrichment sample was dissolved in alkaline water(pH 10). The purified biosurfactant was identified by TLC. It was confirmed that the Rf value of the biosurfactant was 0.78. Antifungal activity against Botrytis cineria was showed the strongly activity as active antagonist. Maximum emulsification activity and stability were obtained from soybean oil. The critical micelle concentration (CMC) of purified biosurfactant was 35mg/l and the purified biosurfactant inhibited biofilm forming by Bacillus sp..

• Journal of the Korean Society of Food Science and Nutrition
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• v.36 no.2
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• pp.149-154
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• 2007

An antibacterial substance to the Streptococcus mutans, a causative bacterium for decayed teeth, was isolated from the dried sea mustard, Undaria pinnatifida, and identified by GC and GC/MS. Acetone extract from the sea mustard (10.4 kg), was evaporated and partitioned to 4 fractions such as hexane, chloroform, butanol and water. The most active chloroform fraction were further purified through basic alumina, silicic acid and ODS column, successively, and finally, 3 antibacterial substances were isolated on the HPLC attached ODS column by using 95% MeOH and guided with UV detector (254 nm). Antibacterial substances (total 160mg, yield $1.5\times10^{-3}$%) had the same Rf value (0.42) on the TLC developed hexane diethyl ether acetic acid (80:30:1) and those methyl esters moved to 0.95. They were identified as the same unsaturated fatty acid, $C_{18:4,\;n-3}$ (3,6,9,12-octadecatetraenoic acid, stearidonic acid) compared relative retention times (15.5 min) with authentic fatty acid on the GC chromatogram. It was further confirmed unambiguously on the GC/MS giving molecular ion peak at m/z 290 which coincided with its methyl ester.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.399-405
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• 2011

In this paper, we present the design of Q-band LC VCO and injection locking buffer for 77 GHz automotive radar sensor using 130 nm RF CMOS process. To improve the phase noise characteristic of LC tank, the transmission line is used. The negative resistance by the active device cross-coupled pair of buffer is used for high output power, with or without oscillation of buffer. The measured phase noise is -102 dBc/Hz at 1 MHz offset frequency and tuning range is 34.53~35.07 GHz. The output power is higher than 4.1 dBm over entire tuning range. The fabricated chip size is $510{\times}130\;um^2$. The power consumption of LC VCO is 10.8 mW and injection locking buffer is 50.4 mW from 1.2 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.389-398
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• 2011

In this paper, the design and fabrication of a transmit/receive(T/R) module for Ka-band phased array radar is presented. A 5bit digital phase shifter and digital attenuator were used in common for both transmitter and receiver considering unique Ka-band characteristic. The circulator was excluded in the T/R module and was placed outside T/R module. The transmitting power per element antenna is designed to be about 1 W and the noise figure is designed to be below 8 dB. The designed T/R module RF part has a compact size of $5\;mm{\times}4\;mm{\times}57\;mm$. In order to implement the T/R module, MMICs used in T/R module was separately assessed before assembly of the designed T/R module. The transmitter of the fabricated T/R module shows about 1 W at 5 dBm unit module input power and the receiver shows a gain of about 20 dB and a noise figure of below 8 dB as expected in the design stage.

• Proceedings of the KOSOMBE Conference
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• v.1996 no.11
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• pp.129-134
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• 1996

1차 년도 G-7 개발 과제로 수행된 자기 공명 진단 장치 (Magnetic Resonance Imaging System)의 개발 내용을 간략히 소개하였다. 성공적인 IT Compact 자기 공명 진단 장치의 완성을 위해 일차적으로 (1)RF (고주파), Gradient(경사 자계), Spectrometer 등의 Hard-ware 관련 MRI 핵심부분, (2) RF, Gradient, Spectrometer, Magnet 등의 각 Sub-system을 연결, 조합, 조정하여 하나의 체계적인 시스템으로 통합하고 운영하는 과정(System Integration), (3)사용자와 시스템을 연결하는 User Interface, Data Base Management, Real time 운영 SW 등과 (4)임상에 적용하여 구체적인 성능과 효용성을 확인하는 기술 등에 대하여 집중 연구하였다. 개발 방법은 (1)지난 16년간 국내에 축적 된 연구 개발 인력들을 최대한 활용하고 (2)연구 개발을 국제화 시켜 필요한 경우 부분별로 개발 인력을 해외에서 보완하고 (3)소수 정예 전문 인력 주의와 요소 기술 또는 중요 부품을 경쟁성 검토 후 필요 시 Out-sourcing 활용으로 최저의 비용으로 개발 기간을 최소화 하는 데 두었다. 개발된 1.0Tesla자기 공명 영상 장치는 미국 물리 학회에서 규격화한 Phantom및 임상 적용을 통하여 서울대 의대 연구 팀과 지속적으로 성능을 평가해 왔다. 개발된 시스템의 해상도는 $256{\times}256$ head 영상에서 1mm 이 하의 해상도를 가짐을 resolution phantom 을 통하여 확인할 수 있었고, $512{\times}512$ 영상에서 는 약 0.5 mm 의 물체를 분리 해냄으로써 외제 시스템들 보다 우수하게 평가 되었다. 차폐 경사코일의 Eddy current영향은2%이내로 촬영 시 영향은 거의 무시할 수 있었다. 또한, 개발된 영상 기법들, 즉 Multislice/Multi Echo, Oblique angle imaging, 64 Echo train을 갖는 고속 촬영 기술들이 자기 공명 장치에 장착되어 임상 적용에 문제가 없도록 하였다. 또한 20mT/m/Amp의 강력한 능동 차폐 경사 자계 코일(Active Shield Gradient Coil)을 기본 사양으로 하고, 수신단을 최대 6개로 확장토록 하여 2차년도의 초고속 촬영 기법(EPI) 및 Phased Array 코일 촬영이 가능토록 하였다. 1차 년도 개발 과제 수행 결과와 향후 개발 과제를 바탕으로 최종 목표인 국제 경쟁력이 있는 자기 공명 진단 장치 즉 기능과 영상의 질은 선진국 제품과 동일하거나 우수하되, 저가격을 구현한 상용화 제품이 완성되어, 첨단 의료기기로서 산업 구조 고도화에 기여하고 수입대체 뿐만 아니 라 수출을 통한 국익 창출과 국가의 기술을 통한 위상 제고에 기여되길 기대한다.