Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.11a
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- Pages.5-5
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- 2009
InGaZnO active layer 두께에 따른 thin-film transistor 전기적인 영향
- U, Chang-Ho (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Kim, Yeong-Lee (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- An, Cheol-Hyeon (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Kim, Dong-Chan (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Gong, Bo-Hyeon (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Bae, Yeong-Suk (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Seo, Dong-Gyu (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Jo, Hyeong-Gyun (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
- Published : 2009.11.12
Abstract
Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on