Metal-Oxide-Silicon (MOS) 구조에서 중수소 이온 주입된 게이트 산화막의 절연 특성

We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects.