• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.637-640
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• 2006

DuPont Teijin Films (DTF) have developed engineered substrates specifically for the flexible electronics market. $Teonex^{(R)}Q65$ is a biaxially oriented crystalline polyester with a tailored surface and it is emerging as a competitive material for the base substrate in OLED displays and active matrix backplanes. Given the dimensional reproducibility requirements in the display applications, uncontrolled moisture absorption during the processing cycle could potentially be far more significant than the inherent shrinkage of the base substrate. Understanding these effects and optimising the processing steps involved in device manufacture will be critical to achieving the ultimate performance that can be achieved with the base substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1111-1114
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• 2006

We have developed a 2 inch LTPS-TFT AMOLED display with a top emission structure on a $50-{\mu}m-thick$ metal foil. The Active matrix back planes were fabricated with the p-channel LTPS TFT with a conventional pixel circuit consisting of 2 transistors and 1 capacitance. The p-channel TFTs on the metal foil exhibited the field-effect mobility of $22cm^2/Vs$. Finally, a images from prototype monochrome AMOLED displays are successfully presented, with $64{\times}88$ pixels and 56-ppi resolution.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1123-1126
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• 2005

For creation of low temperature polycrystallinesilicon (LTPS) the line beam excimer laser annealing (ELA) is a well known and established technique in mass production. With introduction of Sequential Lateral Solidification (SLS) some aspects such as crystalline quality, throughput and flexibility regarding the substrate size could be improved, but for OLED manufacturing still further process development is necessary. This paper discusses line beam ELA and SLS techniques that might enable process engineers to make polycrystalline-silicon (poly-Si) films with a high degree of uniformity and quality as required for system on glass (SOG) and active matrix organic light emitting displays (AMOLED). Equipment requirements are discussed and compared to previous standards. SEM images of process examples are shown in order to demonstrate the viability.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.892-896
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• 2005

In this paper, key issues of stainless steel foil substrates for display applications have been described. We studied and analyzed technical issues on substrate passivation/planarization to control surface roughness and capacitive coupling from conductive substrates. A thick (either multiple or single) passivation/planarization layer needs to be applied on the nonelectronic-grade stainless steel substrate to provide a smooth surface and electrical insulation from the conductive substrate. Especially for large size, high-resolution display applications, low k and thick passivation/planarization layers should be used for appropriate capacitive coupling. Based on our initial study, a unit area capacitance of less than $2nF/cm^2$ of passivation/planarization layers is needed for 32" HD TV OLED displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1297-1300
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.711-714
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• 2006

Properties of silicon nitride ($SiN_x$) film including physical and electrical characteristics have been studied for improving the stability of hydrogenated amorphous silicon thin-film transistors (a-Si TFTs) in active-matrix liquid-crystal displays (AMLCDs). The instability of a-Si:H TFTs is estimated by accelerated stress test of both bias-temperature stress and bias-illumination stress. The results show that the deposition conditions of $SiN_x$ films with higher power and lower pressure are the best choice for improving the on-current and stability of TFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.768-771
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• 2006

Uniformity and performance characteristics of LTPS TFTs are important parameters for making advanced active-matrix displays. In this paper, we describe an SLS-based crystallization approach for producing orientation-controlled Si films with reduced concentrations of planar defects that stand to potentially deliver unprecedented levels of device uniformity and performance. Specifically, a 2-step process referred to as hybrid SLS has been developed that produces a variety of high-quality {100} surface-oriented Si films.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.471-474
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• 2002

Three-ring types liquid crystalline compounds having fluoro and isothiocyanate substituent were synthesized and their physical and electro-optical properties were measured to evaluate the applications to active matrix VA liquid crystal displays. The tetrakis(triphenylphosphine)palladium(0) catalyzed cross coupling of aryl boronic acids with aryl halides is used to prepare trans-4'-Alkoxy-2,3-difluoro-3'-isothiocyanato-4-(4-alkylcyclohexyl}-biphenyl series. The synthesized compounds showed the nematic liquid crystalline phase and the negative dielectric anisotropy. The prepared mixtures showed faster response time and lower threshold voltage than their host mixture.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.289-292
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• 2005

New poly-Si TFTs have been proposed and fabricated in order to increases the output channel resistance ($r_o$). The counter-doped($p^+$) source is tied to the $n^+$ source and is extended into the channel region so that it employs the reverse bias depletion in the channel. As $V_{DS}$ is increased, the depletion width is increased and the effective channel width is reduced. Therefore, the output current saturates well and the $r_o$ is increased successfully. The proposed CMOS devices may improve the amplifier gain of data driver in active-matrix displays

• Journal of the Optical Society of Korea
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• v.16 no.2
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• pp.181-184
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• 2012

We report, for the first time, operation frequency dependence of current density-voltage ($J_{OLED}-V_{OLED}$) shift for multi-layer organic light-emitting diodes (OLEDs). When the OLEDs were electrically stressed for 21 hours with 50% duty voltage pulses at 60, 120, 240, and 360 Hz, the JOLED-VOLED shifts were suppressed by half for 360 Hz operation compared with 60 Hz operation, but with little change in emission efficiencies. This frequency dependent $J_{OLED}-V_{OLED}$ shift is believed to be commonly observed for typical multi-layer OLEDs and can be used to further improve lifetime of digitally-driven active-matrix OLED displays.