• 대한전자공학회논문지
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• 제21권6호
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• pp.34-41
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• 1984

RMOS(refractors metal oxide semiconductor)의 게이트 금속으로 사용되는 Mo2N/Mo 이중층을 N2와 Ar을 혼합하여 저온의 반응성 스펏터링법으로 제조하였다. Ar : N2=95 : 5로 혼합된 가스 분위기에서 반응성 스펏터링을 할 때 Mo2N이 잘 형성되었다. 이렇게 제조한 Mo2N 박막은 면저항이 약 1.20∼1.28Ω/□로서 다결정 실리콘의 1/10정도가 되어 반도체 소자의 동작속도를 크게 향상시킬 것으로 기대된다. 1100℃의 N2분위기에서 PSC(phosphorus silicate glass)를 불순물 확산원으로 하여 소오스와 드레인의 불순물 확산을 할때 Mo2N 박막이 Mo으로 환원되어 확산전의 면저항보다 훨씬 작은 약 0.38Ω/□정도의 면저항을 나타내었다. 본 실험에서 제작한 자기정렬된 RMOSFET의 문턱전압은 약 -1.5V이고 결핍과 증가의 두 가지 동작특성을 나타내었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.525-529
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• 1999

The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.367-367
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• 2012

TTFT에 투명반도체로 사용되고 있는 IGZO 박막의 특성을 조사하였다. IGZO박막은 비정질임에도 불구하고 높은 이동도를 가지는 것으로 알려져 있다. 본 실험에서는 RF magnetron sputtering법을 이용하여 Ar Gas 유량 변화에 따른 IGZO 박막을 유리 기판 위에 제작 하였고 투명반도체의 구조적, 광학적, 전기적 특성을 조사하였다. 소결된 타겟 으로는 In:Ga:ZnO를 각각 1:1:2mol%의 조성비로 혼합하여 이용하였으며, $30{\times}30mm$의 XG Glass 유리기판에 Sputtering 방식으로 증착하였다. 공정 조건으로는 초기합력은 $2.0{\times}10^{-6}Torr$이하로 하였으며, 증착 압력은 $2.0{\times}10^{-2}Torr$로 하였다. Rf power를 75 W로 고정시켰다. 실험 변수로는 Ar Gas를 25, 50, 75, 100 sccm으로 변화를 주어 실험을 진행하였으며, 증착온도는 실온으로 고정하였다. 분석 결과로는 Ar Gas가 75 sccm일 때 XRD분석결과 $34^{\circ}$ 부근에서 (002) c-축 방향성 구조임을 확인할 수 있었으며, AFM분석결과 0.3 nm이하의 Roughness를 가졌다. UV-Visible-NIR 측정결과 가시광선 영역에서 85%이상의 투과도를 만족 시켰으며, Hall 측정결과 Carrier concentration $8.3{\times}101^{19}cm-^{-3}$, Mobility $12.3cm^2/v-s$이며, Resistivity $0.6{\times}10^{-2}{\Omega}-cm$, 투명반도체로 사용 가능함을 확인 할 수 있었다.

• 한국세라믹학회지
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• 제32권7호
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• pp.799-808
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• 1995

Transparent conductive films of aluminium doped zinc oxide (AZO) have been prepared by using the DC magnetron sputtering with the ZnO : Al (Al2O3 2 wt%) oxide target oriented to c-axis. Electrical and optical properties depended upon the O2/Ar gas ratio. The optical transmittance and sheet resistance of the AZO coated glass was 60~65% and 75Ω/$\square$, respectively at the O2/Ar gas ratio of 0. With the increase of the oxygen partial pressure to 2.0$\times$10-2, they were increased to the values of 81% and 1kΩ/$\square$, respectively. The films with the resistivities of 1.2~1.4$\times$10-3 Ω.cm, mobilities of 11~13 $\textrm{cm}^2$/V.sec and carrier concentrations of 3.5$\times$1020~4.0$\times$1020/㎤ were produced at the optimum O2/Ar gas ratio, which was 0.5$\times$10-2~1.0$\times$10-2. According to XRD analysis, the films have only one peak corresponding to the (002) plane, which indicates that there is a strong preferred orientation of the films. The grain size of ZnO films were calculated to 200~320 $\AA$, which was increased with the O2/Ar gas ratio and Ar gas flowrate.

• 한국전기전자재료학회논문지
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• 제35권1호
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• pp.32-36
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• 2022

AGZO thin films were deposited on glass substrates using RF magnetron sputtering system under Ar flow rates, and their structural, electrical, and optical properties were analyzed systematically. As a result of the XRD pattern, the peak of the (002) (2θ≈33.7˚) orientation was observed, and it was found to have a hexagonal wurtzite structure. The sheet resistance of Ar 5 sccm was 3.073×10² Ω/sq and showed the best electrical properties because of the improvement of mobility due to the increase of the grain size and the variation of RMS roughness. In addition, the average transmittance was more than 90% for all samples, which demonstrated good optical properties. It is expected that the TCO characteristics can be improved by controlling Ar flow rates, and this will increase the efficiency of photoelectronic devices such as OLED and solar cells.

• 한국재료학회지
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• 제15권8호
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.157-160
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• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• 센서학회지
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• 제12권6호
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• pp.265-272
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• 2003

본 논문은 파이렉스 #7740 유리 박막을 이용한 MEMS용 MLCA (Multi Layer Ceramic Actuator)와 Si기판의 양극접합 특성에 관한 것이다. 최적의 RF 마그네트론 스피터링 조건 (Ar 100%, input power $1\;W/cm^2$)하에서 MLCA기판위에 파이렉스 #7740 유리의 특성을 갖는 박막을 증착하였다. $450^{\circ}C$에서 1시간 열처리한 다음, -760 mmHg, 600V 그리고 $400^{\circ}C$에서 1시간동안 양극접합했다. 그 다음에 Si 다이어프램을 제조한 후, MLCA/Si 접합계면과 MLCA 구동을 통한 Si 다이어프램 변위특성을 분석 및 평가하였다. 다이어프램 형상에 따라 정밀한 변위 세어가 가능했으며 0.05-0.08 %FS의 우수한 선형성을 나타내었다. 또한, 측정동안 접합계면 균열이나 계면분리가 일어나지 않았다. 따라서, MLCA/Si기판 양각접합기술은 고성능 압전 MEMS 소자 제작공정에 유용하게 사용가능할 것이다.

• 한국전기전자재료학회논문지
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• 제29권3호
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

• 한국해양공학회지
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• 제12권3호통권29호
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• pp.31-41
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• 1998

Single fiber fragmentation technique was used to evaluate the change of interfacial properties by degradation of fiber tensile strength in the fiber reinforced composites. The influences of fiber tensile strength on the interfacial properties have been evaluated by the fragmentation specimens(weak fiber samples) of glass fiber/epoxy resin that was made using the pre-degraded glass fiber in distilled water at $80^{circ}C$ for specified periods. The effects of the immersion time on the interfacial properties in the distilled water at $80^{circ}C$ also have been evaluated by the fragmentation specimens(original fiber samples) of glass fiber/epoxy resin that was made using the received glass fiber. As the result, the tensile strength of glass fiber was decreased with the increasing of the treatment time in the distilled water at $80^{circ}C$ and the interfacial shear strength was independent of the change of the glass fiber strength in the single fiber fragmentation test. But in the durability test using the single fiber fragmentation specimen, interfacial shear strength decreased with the increasing of the immersion time in distilled water ar $80^{circ}C$. And it turned out that the evaluating of interfacial shear strength using original fiber tensile strength was valuable in the durability test for the water environment by the single fiber fragmentation technique.