Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Effects on the Al2O3 Thin Film by the Ar Pulse Time in the Atomic Layer Deposition

원자층 증착에 있어서 아르곤 펄스 시간이 Al2O3 박막에 미치는 효과

  • Kim, Ki Rak (Department of Electronics Engineering, Gachon University) ;
  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)
  • 김기락 (가천대학교 전자공학과) ;
  • 조의식 (가천대학교 전자공학과) ;
  • 권상직 (가천대학교 전자공학과)
  • Received : 2021.12.06
  • Accepted : 2021.12.15
  • Published : 2021.12.31
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Abstract

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al2O3) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al2O3 because of its low process temperature and self-limiting reaction. In the Al2O3 deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al2O3 was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al2O3 was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al2O3 film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

Keywords

Acknowledgement

본 논문은 산업통상자원부 '산업혁신인재성장지원사업'의 재원으로 한국산업기술진흥원(KIAT)의 지원을 받아 수행된 연구임(2020년 차세대 디스플레이 공정·장비·소재 전문인력 양성사업, 과제번호: P0012453).

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