• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.4
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• pp.1-8
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• 2011

In this paper, a microstrip bandpass filter(BPF) with 3 dB bandwidth of more than 50 % at center frequency of 30 GHz was implemented. The implemented BPF is to be used as ASK(Amplitude Shift Keying) transmission and reception filters in IF band for THz transmitter and receiver capable of 10 Gb/s wireless data transmission. The microstrip BPF with ultra-wideband characteristics was implemented using a stepped-impedance lowpass filter(LPF) and a composite quarter-wave short stubs where the LPF is functioning as attenuating the upper stopband and quarter-wave short stubs is functioning as attenuating the lower stopband. The measured results are as follows; the insertion loss is 0.65 dB at 30 GHz, the stopband characteristics are -10 dB and -16 dB at 10 GHz and 50 GHz, respectively, and the passband flatness is ${\pm}0.5$ dB at 20~40 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.9 s.112
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• pp.811-820
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• 2006

Ultra wideband CPW batons are proposed in this paper. The proposed talons are consisted of ultra wideband multi-stage Wilkinson dividers and 'X'-shaped $180^{\circ}$ out-of-phase generator. Bottom-bridges and via-holes are used to connect CPW ground lines instead of the conventional air-bridges which require troublesome manual working in fabrication with HMIC(Hybrid Microwave Integrated Circuits) substrates. The proposed CPW batons have ultra wideband of 3 or $10(=F_{figh}/F_{low})$ theoretically, the wideband characteristics and S-parameters of the basis Wilkinson divider are directly converted to those of the proposed batons. The proposed batons are so compact and small compared to the conventional Wilkinson batons because no additional area for out-of-phase section is required. So the size of the proposed batons is exactly the same as that of the basis Wilkinson dividers. As examples, 3-stage and 7-stage wideband Wilkinson dividers are converted to the proposed batons. Their measured operating bandwidth are $1\sim3GHz$ and $0.8\sim5GHz$, respectively, with excellent matching, isolation and power division performances. The measured magnitude and phase balance errors are ${\pm}0.5dB\;and\;0.45\;dB,\;and\;{\pm}5^{\circ}\;and\;{\pm}10^{\circ}C$ over $1\sim3GHz\;and\;0.8\sim5GHz$, respectively.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.109-112
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• 2000

본 논문은 마이크로머시닝 기술을 이용한 밀리미터파 대역의 공진기 설계를 제시한다. 밀리미터파 대역에서 3D 설계 tool인. HP HFSS ver. 5.5를 사용하였다. One-port cavity 공진기는 공진 주파수가 39.34 GHz., 반사 손실은 14.5 dB, 그리고, loaded Q (Q$_1$)는 150 을 보인다. Two-port cavity 공진기의 경우, 공진 주파수는 39GHz이고, 삽입 손실과 반사 손실은 각각 4.6 dB 와 19.8 dB. 그리고 loaded Q와 unloaded Q는 각각 44.3과 107로 측정되었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.89-94
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• 2008

In this paper, a cascade of a wideband amplifier and a high-Q bandpass filter (BPF) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion receivers. The wideband amplifier is designed to obtain the -3dB bandwidth of 5.4GHz, and the high-Q BPF is designed to select a 2.4GHz RF signal for the Bluetooth specifications. The measured results demonstrate 18.8dB power gain at 2.34GHz with 31MHz bandwidth, corresponding to the quality factor of 75. Also, it shows the noise figure (NF) of 8.6dB, and the broadband input matching (S11) of less than -12dB within the bandwidth. The whole chip dissipates 64.8mW from a single 1.8V supply and occupies the area of $1.0{\times}1.0mm2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.475-485
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• 2010

This paper proposes a novel concept for a microstrip resonator that can function as a filter and as an antenna at the same time. The proposed structure consists of an outer ring, an open loop-type inner ring, a circular patch, and three ports. The frequencies where the proposed structure works as a filter and as an antenna, respectively, are determined primarily by the radius of the inner ring and the circular patch. The measured results show that, when the microstrip resonator operates as a filtering device, this filter has about 15.1 % bandwidth at the center frequency of 0.63 GHz and a minimum insertion loss of 1.5 dB within passband. There are three transmission zeros at 0.52 GHz, 1.14 GHz, and 2.22 GHz. In the upper stopband, cross coupling - taking place at the stub of the outer ring - and the open loop-type inner ring produce one transmission zero each. The circular patch generates the dual-mode property of the filter and another transmission zero, whose location can be easily adjusted by altering the size of the circular patch. The proposed structure works as an antenna at 2.7 GHz, showing a gain of 3.8 dBi. Compared to a conventional patch antenna, the proposed structure has a similar antenna gain. At the resonant frequencies of the filter and the antenna, high isolation(less than -25 dB) between the filter port and the antenna port can be obtained.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.155-159
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• 2003

This paper presents fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diode and tuning rage is $5.01{\sim}5.30$ GHz under $0{\sim}3 V$ control voltage. For good phase noise performance, LC filtering technique, common in Si CMOS process, is used, and to prevent degradation of phase noise performance by collector shot-noise and to reduce power dissipation the HBT is biased at low collector current density bias point. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is good performance. Moreover phase noise is improved by roughly 5 dEc by LC filter. It is the first experimental result in InGaP/GaAs HBT process. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.213-216
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• 2004

This paper describes design and implementation of the 5.5 GHz VCO with parallel-branch inductors using 0.8${\mu}m$ SiGe HBT process technology. The proposed parallel-branch inductor shows $12 \%$ improvement in quality factor in comparison with the conventional inductor. A phase noise of -93 dBc/Hz is measured at 100 kHz offset frequency, and the harmonics in the VCO are suppressed less than -23 dBc. The single-sided output power of the VCO is -6.5$\pm$1.5 dBm. The manufactured VCO consumes 15.0 mA with 2.5 V supply voltage. Its chip areas are 1.8mm ${\times}$ 1.2mm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.295-301
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• 2008

Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.

• Journal of IKEEE
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• v.21 no.3
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• pp.219-226
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• 2017

This paper was studied the double-band monopole antenna design with Mu-negative metamaterial unit cell, which operates at 700MHz and 2.45GHz band. Mu-negative unit cell made of the interdigital capacitor structure to operate a double-band antenna by inserting it into an antenna radiator unit. In addition, the parasitic conductor is implemented on the back side of the antenna radiation part, so that the resonance point of the antenna can be controlled and the bandwidth is improved. Finally, we implemented an antenna operating in the 750MHz UHD band and the 2.45GHz WiFi band. The designed antenna has a size of $200{\times}100mm^2$. Experimental results show that the 8dB bandwidth and gain characteristics at 750MHz band are 320MHz(42.7%), 5.28dB, 6dB bandwidth and gain at 2.45GH are 540MHz (21.6%), -0.46dB. From the experimental results, we confirmed that the resonance point with theoretical value is in agreement with experimental value, and the radiation patterns are have the omnidirectional characteristic in both bands.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2941-2951
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• 2023

The optimal minimum ECCD power is evaluated numerically for completely suppressing the 3/2 and 2/1 NTMs in the CFETR hybrid scenario. For two typical frequencies of ECCD sources launching from two upper launcher (UL) ports, f_ec = 210 GHz and 240 GHz with O1-mode, UL₁: (R_i, Z_i) = (8.47, 5.7) m and UL₂: (R_i, Z_i) = (8.2, 4.5) m, higher frequency of ECCD source launching from the UL₂ port is better than that low frequency counterpart from the UL₁ port. Using 240 GHz ECCD source launching from the UL₂ port, the minimum power required to fully suppress the two NTMs with precise ECCD alignment is 12.4 MW and 16.7 MW, respectively. When good alignment cannot be achieved, the results suggest that the misalignment should not exceed 0.02α, preferably 0.015α, corresponding to 4.4 cm and 3.3 cm. Considering engineering difficulty of high-frequency gyrotron sources, the optimal minimum ECCD power with the 210 GHz source launching from the UL₂ port is 17.9 MW and 20.6 MW for completely suppressing the 3/2 and 2/1 NTMs, respectively. In view of this, it is a good choice to select the 210 GHz ECCD source launching from the UL₂ port in the short and medium term.