A 2.4 GHz SiGe VCO having High-Q Parallel-Branch Inductor

High-Q 병렬분기 인덕터를 내장한 2.4 GHz SiGe VCO

  • Lee J.Y (SiGe Team Electronics and Telecommunications Research Institute) ;
  • Suh S.D (SiGe Team Electronics and Telecommunications Research Institute) ;
  • Bae B.C (SiGe Team Electronics and Telecommunications Research Institute) ;
  • Lee S.H (SiGe Team Electronics and Telecommunications Research Institute) ;
  • Kang J.Y (SiGe Team Electronics and Telecommunications Research Institute) ;
  • Kim B.W. (SiGe Team Electronics and Telecommunications Research Institute) ;
  • Oh S.H (Chungnam National University)
  • Published : 2004.06.01

Abstract

This paper describes design and implementation of the 5.5 GHz VCO with parallel-branch inductors using 0.8${\mu}m$ SiGe HBT process technology. The proposed parallel-branch inductor shows $12 \%$ improvement in quality factor in comparison with the conventional inductor. A phase noise of -93 dBc/Hz is measured at 100 kHz offset frequency, and the harmonics in the VCO are suppressed less than -23 dBc. The single-sided output power of the VCO is -6.5$\pm$1.5 dBm. The manufactured VCO consumes 15.0 mA with 2.5 V supply voltage. Its chip areas are 1.8mm ${\times}$ 1.2mm.

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