• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2005.09a
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• pp.89-110
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• 2005

A new 3D integration technology using wafer-to-wafer and chip-to-wafer stacking method was described. It was demonstrated that 3D microprocessor, 3D shared memory, 3D image processing chip and 3D artificial retina chip fabricated using 3D integration technology were successfully operated. The possibility of applying 3D image processing chip and 3D artificial retina chip to Robot's eye was investigated. The possibility of implanting 3D artificial retina chip into human eye was investigated.

• Journal of Welding and Joining
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• v.24 no.2
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• pp.64-70
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• 2006

The 3-dimensional (3D) chip stacking technology is a leading technology to realize a high density and high performance system in package (SiP). There are several kinds of methods for chip stacking, but the stacking and interconnection through Cu filled through-hole via is considered to be one of the most advanced stacking technologies. Therefore, we studied the optimum process of through-hole via formation and Cu filling process for Si wafer stacking. Through-hole via was formed with DRIE (Deep Reactive ion Etching) and Cu filling was realized with the electroplating method. The optimized conditions for the via formation were RE coil power of 200 W, etch/passivation cycle time of 6.5 : 6 s and SF6 : C4F8 gas flow rate of 260 : 100 sccm. The reverse pulsed current of 1.5 A/dm2 was the most favorable condition for the Cu electroplating in the via. The Cu filled Si wafer was chemically and mechanically polished (CMP) for the following flip chip bumping technology.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.865-871
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• 2014

Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.467-468
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• 2012

• Journal of electromagnetic engineering and science
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• v.11 no.4
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• pp.282-289
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• 2011

GHz electromagnetic interference (EMI) characteristics are analyzed for a 3dimensional (3D) stacked chip power distribution network (PDN) with through silicon via (TSV) connections. The EMI problem is mostly raised by P/G (power/ground) noise due to high switching current magnitudes and high PDN impedances. The 3D stacked chip PDN is decomposed into P/G TSVs and vertically stacked capacitive chip PDNs. The TSV inductances combine with the chip PDN capacitances produce resonances and increase the PDN impedance level in the GHz frequency range. These effects depend on stacking configurations and P/G TSV designs and are analyzed using the P/G TSV model and chip PDN model. When a small size chip PDN and a large size chip PDN are stacked, the small one's impedance is more seriously affected by TSV effects and shows higher levels. As a P/G TSV location is moved to a corner of the chip PDNs, larger PDN impedances appear. When P/G TSV numbers are enlarged, the TSV effects push the resonances to a higher frequency range. As a small size chip PDN is located closer to the center of a large size chip PDN, the TSV effects are enhanced.

• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.207-212
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• 2021

The mechanical and electrical characteristics can be improved in 3D stacked IC technology which can accomplish the ultra-high integration by stacking more semiconductor chips within the limited package area through the Cu direct bonding method minimizing the performance degradation to the bonding surface to the inorganic compound or the oxide film etc. The surface was treated in a ultrasonic washer using a diamond abrasive to remove other component substances from the prepared cast plate substrate surface. FE-SEM was used to analyze the bonding characteristics of the bonded copper substrates, and the cross section of the bonded Cu conjugates at the sintering junction temperature of 100 ℃, 150 ℃, 200 ℃, 350 ℃ and the pressure of 2303 N/cm² and 3087 N/cm². At 2303 N/cm², the good bonding of copper substrate was confirmed at 350 ℃, and at the increased pressure of 3087 N/cm², the bonding condition of Cu was confirmed at low temperature junction temperature of 200 ℃. However, the recrystallization of Cu particles was observed due to increased pressure of 3087 N/cm² and diffusion of Cu atoms at high temperature of 350 ℃, which can lead to degradation in semiconductor manufacturing.

• ETRI Journal
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• v.36 no.4
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• pp.643-653
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• 2014

To reduce interconnect delay and power consumption while improving chip performance, a three-dimensional integrated circuit (3D IC) has been developed with die-stacking and through-silicon via (TSV) techniques. The power supply problem is one of the essential challenges in 3D IC design because IR-drop caused by insufficient supply voltage in a 3D chip reduces the chip performance. In particular, power bumps and TSVs are placed to minimize IR-drop in a 3D power delivery network. In this paper, we propose a design methodology for 3D power delivery networks to minimize the number of power bumps and TSVs with optimum mesh structure and distribute voltage variation more uniformly by shifting the locations of power bumps and TSVs while satisfying IR-drop constraint. Simulation results show that our method can reduce the voltage variation by 29.7% on average while reducing the number of power bumps and TSVs by 76.2% and 15.4%, respectively.

• ETRI Journal
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• v.34 no.5
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• pp.706-712
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• 2012

In previous work, novel maskless bumping and no-flow underfill technologies for three-dimensional (3D) integrated circuit (IC) integration were developed. The bumping material, solder bump maker (SBM) composed of resin and solder powder, is designed to form low-volume solder bumps on a through silicon via (TSV) chip for the 3D IC integration through the conventional reflow process. To obtain the optimized volume of solder bumps using the SBM, the effect of the volumetric mixing ratio of resin and solder powder is studied in this paper. A no-flow underfill material named "fluxing underfill" is proposed for a simplified stacking process for the 3D IC integration. It can remove the oxide layer on solder bumps like flux and play a role of an underfill after the stacking process. The bumping process and the stacking process using the SBM and the fluxing underfill, respectively, for the TSV chips are carefully designed so that two-tier stacked TSV chips are sucessfully stacked.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.25-32
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• 2012

Package for artificial satellite is to produce mass production for high package with reliability certification as well as develop SDRAM (synchronous dynamic RAM) module which has such as miniaturization, mass storage, and high reliability in space environment. It requires sophisticated technology with chip stacking or package stacking in order to increase up to 4Gbits or more for mass storage with space technology. To make it better, we should secure suitable processes by doing design, manufacture, and debugging. Pin type PCB substrate was then applied to QFP-Pin type 3D memory package fabrication. These results show that the 3D memory package for artificial satellite scheme is a promising candidate for the realization of our own domestic technologies.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.473-474
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• 2012